山东晶导微电子有限公司
Jingdao Microelectronics
Surface Mount Schottky Barrier Rectifier
Reverse Voltage - 20 to 200 V
Forward Current - 1.0 A
FEATURES
• Metal silicon junction, majority carrier conduction
• For surface mounted applications
• Low power loss, high efficiency
• High forward surge current capability
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
MECHANICAL DATA
• Case: SMAF
• Terminals: Solderable per MIL-STD-750, Method 2026
• A pprox. Weight: 27mg
/
0
.
00095oz
SS12F THRU SS120F
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
1
2
Top View
Marking Code: SS12 — SS120
Simplified outline SMAF and symbol
Absolute Maximum Ratings and Electrical characteristics
Ratings at 25
°C
ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load,
for capacitive load, derate by 20 %
Parameter
Symbols
SS12F
SS14F
SS16F
SS18F
SS110F
SS112F
SS115F
SS120F
Units
Maximum Repetitive Peak Reverse Voltage
V
RRM
V
RMS
V
DC
I
F(AV)
20
14
20
40
28
40
60
42
60
80
56
80
1.0
100
70
100
120
84
120
150
105
150
200
140
200
V
V
V
A
Maximum RMS voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current,8.3ms
Single Half Sine-wave Superimposed
on Rated Load (JEDEC method)
I
FSM
30
A
Max Instantaneous Forward Voltage at 1 A
V
F
0.55
0.3
10
110
0.70
0.85
0.2
5
80
95
-55 ~ +125
-55 ~ +150
0.90
0.1
2
V
Maximum DC Reverse Current
at Rated DC Reverse Voltage
T
a
= 25°C
T
a
=100°C
I
R
mA
Typical Junction Capacitance
（1）
C
j
R
θJA
T
j
T
stg
pF
°C/W
Typical Thermal Resistance
（2）
Operating Junction Temperature Range
°C
°C
Storage Temperature Range
（1）
Measured at 1 MHz and applied reverse voltage of 4 V D.C
（2）
P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
2017.01
SMAF-S-SS12F~SS120F-1A200V
Page 1 of 3
山东晶导微电子有限公司
Jingdao Microelectronics
SS12F THRU SS120F
Fig.1 Forward Current Derating Curve
Instaneous Reverse Current (
μA)
1.2
10
4
Fig.2 Typical Reverse Characteristics
Average Forward Current (A)
1.0
0.8
0.6
0.4
0.2
Single phase half-wave 60 Hz
resistive or inductive load
10
3
T
J
=100
°C
10
2
T
J
=75
°C
10
1
T
J
=25
°C
0.0
25
50
75
100
125
150
10
0
0
20
40
60
80
100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage（%）
Fig.3 Typical Forward Characteristic
Instaneous Forward Current (A)
500
20
10
Fig.4 Typical Junction Capacitance
Junction Capacitance ( pF)
T
J
=25
°C
200
100
50
SS12F/SS14F
SS16F-SS120F
1.0
SS12F/SS14F
SS16F/SS18F
SS110F/SS112F
SS115F/SS120F
20
10
0.1
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
1
10
100
Instaneous Forward Voltage (V)
Reverse Voltage (V)
50
40
Transient Thermal Impedance（
°C
/W）
Fig.5 Maximum Non-Repetitive Peak
Forward Surage Current
Peak Forward Surage Current (A)
Fig.6- Typical Transient Thermal Impedance
1000
100
30
20
10
10
8.3 ms Single Half Sine Wave
(JEDEC Method)
00
1
10
100
1
0.01
0.1
1
10
100
Number of Cycles at 60Hz
t, Pulse Duration（sec）
2017.01
www.sdjingdao.com
Page 2 of 3
Microcontroller MCU
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