AO4806
20V Dual N-Channel MOSFET
General Description
The AO4806 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. They
offer operation over a wide gate drive range from
1.8V to 12V. It is ESD protected. This device is
suitable for use as a uni-directional or bi-directional
load switch, facilitated by its common-drain
configuration.
Product Summary
V
DS
(V) = 20V
I
D
= 9.4A (V
GS
= 10V)
R
DS(ON)
< 14mΩ (V
GS
= 10V)
R
DS(ON)
< 15mΩ (V
GS
= 4.5V)
R
DS(ON)
< 21mΩ (V
GS
= 2.5V)
R
DS(ON)
< 30mΩ (V
GS
= 1.8V)
ESD Rating: 2000V HBM
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
Bottom View
Top View
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
D1
D2
G1
G2
S1
Pin1
S2
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
B
Maximum
20
±12
9.4
7.5
40
2
1.28
-55 to 150
Units
V
V
A
V
GS
T
A
=25°
C
C
T
A
=70°
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
P
D
T
J
, T
STG
W
°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
45
72
34
Max
62.5
110
40
Units
°
C/W
°
C/W
°
C/W
Alpha & Omega Semiconductor, Ltd.
AO4806
Electrical Characteristics (T
J
=25° unless otherwise noted)
C
Symbol
Parameter
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=16V, V
GS
=0V
T
J
=55°
C
V
DS
=0V, V
GS
=±10V
V
DS
=0V, I
G
=±250uA
V
DS
=V
GS
I
D
=250µA
V
GS
=4.5V, V
DS
=5V
V
GS
=10V, I
D
=9.4A
T
J
=125°
C
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=8A
V
GS
=2.5V, I
D
=6A
V
GS
=1.8V, I
D
=4A
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
V
DS
=5V, I
D
=9.4A
I
S
=1A
±12
0.5
30
11
14.3
12.6
16.5
23.4
37
0.72
1
3
1810
V
GS
=0V, V
DS
=10V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
232
200
1.6
17.9
V
GS
=4.5V, V
DS
=10V, I
D
=9.4A
1.5
4.7
3.3
V
GS
=10V, V
DS
=10V, R
L
=1.1Ω,
R
GEN
=3Ω
I
F
=9.4A, dI/dt=100A/µs
5.9
44
7.7
22
8.6
14
17
16
22
30
0.75
1
Min
20
10
25
±10
Typ
Max
Units
V
µA
µA
V
V
A
mΩ
mΩ
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
nC
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
BV
GSO
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Source leakage current
Gate-Source Breakdown Voltage
Gate Threshold Voltage
On state drain current
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=9.4A, dI/dt=100A/µs
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25° The value
C.
in any a given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
µs
pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25° The SOA
C.
curve provides a single pulse rating.
Rev4: Nov. 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4806
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
10V
2.5V
30
4.5V
2V
16
V
DS
=5V
20
I
D
(A)
12
20
I
D
(A)
8
10
V
GS
=1.5V
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
40
V
GS
=1.8V
30
Normalized On-Resistance
1.6
V
GS
=2.5V,6A
1.4
V
GS
=4.5V, 8A
4
125°C
25°C
0
0
0.5
1
1.5
2
2.5
3
V
GS(Volts)
Figure 2: Transfer Characteristics
V
GS
=2.5V
V
GS
=4.5V
10
V
GS
=10V
0
0
5
10
15
20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS(ON)
(m
Ω
)
20
1.2
V
GS
=1.8V, 4A
V
GS
=10V, 9.4A
1
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
40
1.0E+01
1.0E+00
30
R
DS(ON)
(m
Ω
)
I
D
=6A
1.0E-01
I
S
(A)
125°C
20
125°C
1.0E-02
1.0E-03
25°C
10
25°C
1.0E-04
0
0
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
AO4806
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
V
GS
(Volts)
3
2
1
400
0
0
4
8
12
16
20
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
0
0
5
10
15
20
V
DS
(Volts)
Figure 8: Capacitance Characteristics
V
DS
=10V
I
D
=9.4A
Capacitance (pF)
2800
2400
2000
C
iss
1600
1200
800
C
oss
C
rss
100.0
10µs
10.0
I
D
(Amps)
R
DS(ON)
limited
100µs
10ms
0.1s
1.0
T
J(Max)
=150°C
T
A
=25°C
0.1
0.1
1
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
100
1s
10s
DC
Power (W)
1ms
40
T
J(Max)
=150°C
T
A
=25°C
30
20
10
0
0.001
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
0.01
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=62.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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