AO4419
30V P-Channel MOSFET
General Description
The AO4419 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R
DS(ON)
. This device is ideal for load switch
and battery protection applications.
Product Summary
V
DS
I
D
(at V
GS
=-10V)
R
DS(ON)
(at V
GS
=-10V)
R
DS(ON)
(at V
GS
= -4.5V)
-30V
-9.7A
< 20mΩ
< 35mΩ
100% UIS Tested
100% R
g
Tested
SOIC-8
Top View
D
D
D
D
G
G
S
S
S
Bottom View
D
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
C
Maximum
-30
±20
-9.7
-7.8
-70
-27
36
3.1
2
-55 to 150
Units
V
V
A
A
mJ
W
°
C
V
GS
T
A
=25°
C
C
T
A
=70°
I
D
I
DM
I
AS
, I
AR
E
AS
, E
AR
P
D
T
J
, T
STG
Avalanche energy L=0.1mH
T
A
=25°
C
Power Dissipation
B
T
A
=70°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
31
59
16
Max
40
75
24
Units
°
C/W
°
C/W
°
C/W
Rev 6: May 2011
www.aosmd.com
Page 1 of 6
AO4419
Electrical Characteristics (T
J
=25° unless otherwise noted)
C
Symbol
Parameter
Conditions
I
D
=-250µA, V
GS
=0V
V
DS
=-30V, V
GS
=0V
T
J
=55°
C
V
DS
=0V, V
GS
= ±20V
V
DS
=V
GS
I
D
=-250µA
V
GS
=-10V, V
DS
=-5V
V
GS
=-10V, I
D
=-9.7A
R
DS(ON)
g
FS
V
SD
I
S
I
SM
Static Drain-Source On-Resistance
V
GS
=-4.5V, I
D
=-7A
Forward Transconductance
Diode Forward Voltage
Pulsed Body-Diode Current
C
Min
-30
Typ
Max
Units
V
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
-1
-5
±100
-1.5
-70
16.5
T
J
=125°
C
24
26
27
-0.75
-1
-4
-70
1040
20
29
35
-2.0
-2.5
µA
nA
V
A
mΩ
mΩ
S
V
A
A
pF
pF
pF
V
DS
=-5V, I
D
=-9.7A
I
S
=-1A,V
GS
=0V
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
2
V
GS
=0V, V
DS
=-15V, f=1MHz
180
125
4
19
6
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
SWITCHING PARAMETERS
Q
g
(10V) Total Gate Charge
Q
g
(4.5V) Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
I
F
=-9.7A, dI/dt=500A/µs
2
V
GS
=-10V, V
DS
=-15V, I
D
=-9.7A
9.6
3.6
4.6
10
V
GS
=-10V, V
DS
=-15V, R
L
=1.5Ω,
R
GEN
=3Ω
5.5
26
9
11.5
25
Body Diode Reverse Recovery Charge I
F
=-9.7A, dI/dt=500A/µs
A. The value of R
θJA
is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T
A
=25° The
C.
value in any given application depends on the user's specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150° using
≤
10s junction-to-ambient thermal resistance.
C,
C.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150° Ratings are based on low frequency and duty cycles to keep
initialT
J
=25°
C.
D. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in
2
FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T
J(MAX)
=150° The SOA curve provides a single pulse ratin g.
C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 6: May 2011
www.aosmd.com
Page 2 of 6
AO4419
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
-10V
50
40
-I
D
(A)
-I
D
(A)
-4.5V
30
20
10
V
GS
=-3.0V
0
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
35
30
R
DS(ON)
(m
Ω
)
25
V
GS
=-4.5V
20
15
10
0
10
15
20
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
5
Normalized On-Resistance
1.6
V
GS
=-10V
I
D
=-9.7A
0
0
1
2
3
4
5
-V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
-3.5V
10
125°
C
25°
C
20
-7V
-5V
30
40
V
DS
=-5V
1.4
1.2
1
17
5
2
10
V
GS
=-4.5V
I
D
=-7A
V
GS
=-10V
0.8
0
25
50
75
100
125
150
175
0
Temperature (°
C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
1.0E+02
60
I
D
=-9.7A
50
R
DS(ON)
(m
Ω
)
1.0E+01
1.0E+00
-I
S
(A)
40
40
125°
C
30
1.0E-01
1.0E-02
1.0E-03
125°
C
25°
C
20
25°
C
10
2
4
6
8
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
Rev 6: May 2011
www.aosmd.com
Page 3 of 6
AO4419
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=-15V
I
D
=-9.7A
8
Capacitance (pF)
-V
GS
(Volts)
1600
1400
1200
1000
800
600
C
oss
400
2
200
0
0
10
15
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
T
A=25°
C
T
A=100°
C
T
A=150°
C
C
iss
6
4
0
5
20
0
C
rss
15
20
25
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
10
30
100
-I
AR
(A) Peak Avalanche Current
100.0
10.0
R
DS(ON)
limited
10µs
100µs
10
-I
D
(Amps)
T
A=125°
C
1.0
1ms
10ms
T
J(Max)
=150°C
T
A
=25°C
10s
DC
10
100
0.1
1
10
100
1000
Time in avalanche, t
A
(µs)
µ
Figure 9: Single Pulse Avalanche capability (Note
C)
1
0.0
0.01
0.1
1
-V
DS
(Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area (Note F)
10000
T
A
=25°
C
1000
Power (W)
100
10
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
Rev 6: May 2011
www.aosmd.com
Page 4 of 6
AO4419
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
1
R
θJA
=75°
C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
Single Pulse
P
D
T
on
T
100
1000
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 6: May 2011
www.aosmd.com
Page 5 of 6
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