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1N6066

Description
1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-13
CategoryDiscrete semiconductor    diode   
File Size197KB,4 Pages
ManufacturerLittelfuse
Websitehttp://www.littelfuse.com
Download Datasheet Parametric View All

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1N6066 Overview

1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-13

1N6066 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerLittelfuse
Reach Compliance Codeunknown
ECCN codeEAR99
Breakdown voltage nominal value130 V
Maximum clamping voltage191 V
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-609 codee0
polarityBIDIRECTIONAL
Maximum repetitive peak reverse voltage105 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Silicon Avalanche Diodes
1500 Watt Metal Axial Leaded Transient Voltage Suppressors
1N60 Series
FEATURES
Hermetically sealed
Breakdown voltage range 6.8 - 200 volts
Glass passivated junction
Excellent clamping capability
Low zener impedance
100% surge tested
-55°C to +150°C
Bi-directional
®
6
SILICON DIODE
ARRAYS
Min 31.8
Max
5.33
7.5
9.0
Min 25.4
Max
0.8
5.58
MAXIMUM RATING
Peak Pulse Power (Ppk): 15000 Watts (10 x 1000µs)@25°C
(see diagram on page 3 for wave form)
1 watt steady state
Response time: 1 x 10
-12
seconds (theoretical)
Operating & storage temperature: -55°C to +150°C
MECHANICAL CHARACTERISTICS
Case: Metal hermetically sealed DO-13 package
Terminals: Axial leads, solderable per MIL-STD-202
Method 208
Solderable leads = 230°C for 10 seconds (1.59mm from case)
Weight: 1.5 grammes (approx)
Agency Approvals:
Recognized under the Components
Program of Underwriters Laboratories.
Agency File Number:
E128662
ORDERING INFORMATION
1N60 X X A
All dimensions in mm
Voltage Reference
5% Voltage Tolerance
Packaging Option
B = Bulk (500 pcs)
w w w. l i t t e l f u s e . c o m
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