CMLO-F Series
SMD Molding Power Inductor
◆
Features
Pb
2
3
4
5
6
The use of magnetic iron powder ensure capability
Ideal for DC-DC converter applications in hand held
◆
Applications
◆
Lead Free Part Numbering
CMLO
(1)
252012 F 2R2 M
(2)
(3) (4) (5)
LXWXH
(1) Series Type
(3) Material Code
2R2=2.2μH
(5) Inductance Tolerance M= 20%, N=±30%
(6) Company Code
(7) Packaging packed in embossed carrier tape
◆
Dimensions
Series
CMLO201610F
CMLO252010F
CMLO252012F
L (mm)
2.0±0.1
2.5±0.2
2.5±0.2
W (mm)
1.6±0.1
2.0±0.2
2.0±0.2
C (mm)
1.0 Max
1.0 Max
1.2 Max
F (mm)
0.5±0.3
0.5±0.3
0.5±0.3
Recommended Land Patterns
A (mm)
B (mm)
E (mm)
0.8
2.05
1.65
1.2
1.2
2.8
2.8
2.0
2.0
Rev.01
；
(4) Inductance R68=0.68μH
± ：
：
：
(2) Dimension
；
6
personal multimedia devices
T
T
(6) (7)
；
5
Portable gaming devices, personal navigation systems
；
4
Portable device
：
；
3
LTE module
；
2
Hard disk of ultrabook
； 、
、
、
、
、
、
、
1
Smart phone
MID
。
RoHS compliant
；
Frequency Range: up to 3.0MHz
；
personal computer and etc
；
Low audible core noise
；
for large current
；
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、
、
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1
Magnetically shielded construction, low DC resistance
CMLO-F Series
◆
Specification
Part Number
Typ.
CMLO201610F
CMLO201610FR24MTT
CMLO201610FR33MTT
CMLO201610FR47MTT
CMLO201610FR68MTT
CMLO201610F1R0MTT
CMLO201610F1R5MTT
CMLO201610F2R2MTT
CMLO201610F3R3MTT
CMLO201610F4R7MTT
CMLO252010F
CMLO252010FR33MTT
CMLO252010FR47MTT
CMLO252010FR68MTT
CMLO252010F1R0MTT
CMLO252010F1R0MTT
CMLO252010F2R2MTT
CMLO252010F4R7MTT
CMLO252012F
CMLO252012FR47MTT
CMLO252012FR68MTT
CMLO252012F1R0MTT
CMLO252012F1R5MTT
CMLO252012F2R2MTT
CMLO252012F4R7MTT
0.47±20%
0.68±20%
1.0±20%
1.5±20%
2.2±20%
4.7±20%
19
27
39
62
81
193
27
36
50
78
99
237
1MHz/1.0V
1MHz/1.0V
1MHz/1.0V
1MHz/1.0V
1MHz/1.0V
1MHz/1.0V
4.22
3.50
3.29
2.39
2.27
1.55
5.10
4.73
4.27
3.17
2.85
1.73
0.33±20%
0.47±20%
0.68±20%
1.0±20%
1.5±20%
2.2±20%
4.7±20%
20
25
35
44
75
98
210
27
33
46
55
92
120
276
1MHz/1.0V
1MHz/1.0V
1MHz/1.0V
1MHz/1.0V
1MHz/1.0V
1MHz/1.0V
1MHz/1.0V
4.30
3.60
3.20
2.70
2.30
1.73
1.22
6.50
4.90
4.10
3.46
2.46
2.27
1.69
0.24±20%
0.33±20%
0.47±20%
0.68±20%
1.0±20%
1.5±20%
2.2±20%
3.3±20%
4.7±20%
16
22
33
41
60
113
135
210
308
22
31
40
49
69
128
150
254
376
1MHz/1.0V
1MHz/1.0V
1MHz/1.0V
1MHz/1.0V
1MHz/1.0V
1MHz/1.0V
1MHz/1.0V
1MHz/1.0V
1MHz/1.0V
4.60
3.70
3.26
3.15
2.56
1.79
1.68
1.33
1.07
5.50
5.15
3.81
3.38
2.73
2.45
1.80
1.34
1.24
NOTES:
1. DC current (Idc) that will cause an approximate T of 40
2. DC current (Isat) that will cause Lo to drop approximately 20%
3. All test data is referenced to 25 ambient
4. Operating Temperature Range -
to +1
5. The part temperature (ambient + temp rise) should not exceed 150
under the worst operating conditions. Circuit design, component placement,
PWB trace size and thickness, airflow and other cooling provisions all affect
the part temperature. Part temperature should be verified in the end application.
Rev.01
℃
℃
Ω
Ω
Ω
Ω
INDUCTANCE
Lo( H)
Rdc
(m )
Max
Test a
condition
HEAT RATING
CURRENT(Idc)
DC AMPS1
(Typ.)
SATURATION
CURRENT(Isat)
DC AMPS2
(Typ.)
△
℃
52
μ
μ
μ
μ
℃
04
℃
Page 2 of 4
Power technology
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