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FM25L04B-GTR

Description
Memory interface type: SPI Memory capacity: 4Kb (512 x 8) Operating voltage: 2.7V ~ 3.6V Memory type: Non-Volatile 4-Kbit (512 × 8bit), SPI interface, operating voltage: 2.7V to 3.6V
Categorystorage    FRAM memory   
File Size743KB,21 Pages
ManufacturerCypress Semiconductor
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FM25L04B-GTR Overview

Memory interface type: SPI Memory capacity: 4Kb (512 x 8) Operating voltage: 2.7V ~ 3.6V Memory type: Non-Volatile 4-Kbit (512 × 8bit), SPI interface, operating voltage: 2.7V to 3.6V

FM25L04B-GTR Parametric

Parameter NameAttribute value
Memory architecture (format)FRAM
Memory interface typeSPI
memory capacity4Kb (512 x 8)
Operating Voltage2.7V ~ 3.6V
memory typeNon-Volatile
FM25L04B
4-Kbit (512 × 8) Serial (SPI) F-RAM
4-Kbit (512 × 8) Serial (SPI) F-RAM
Features
Functional Description
The FM25L04B is a 4-Kbit nonvolatile memory employing an
advanced ferroelectric process. A ferroelectric random access
memory or F-RAM is nonvolatile and performs reads and writes
similar to a RAM. It provides reliable data retention for 151 years
while eliminating the complexities, overhead, and system level
reliability problems caused by serial flash, EEPROM, and other
nonvolatile memories.
Unlike serial flash and EEPROM, the FM25L04B performs write
operations at bus speed. No write delays are incurred. Data is
written to the memory array immediately after each byte is
successfully transferred to the device. The next bus cycle can
commence without the need for data polling. In addition, the
product offers substantial write endurance compared with other
nonvolatile memories. The FM25L04B is capable of supporting
10
14
read/write cycles, or 100 million times more write cycles
than EEPROM.
These capabilities make the FM25L04B ideal for nonvolatile
memory applications requiring frequent or rapid writes.
Examples range from data collection, where the number of write
cycles may be critical, to demanding industrial controls where the
long write time of serial flash or EEPROM can cause data loss.
The FM25L04B provides substantial benefits to users of serial
EEPROM or flash as a hardware drop-in replacement. The
FM25L04B uses the high-speed SPI bus, which enhances the
high-speed write capability of F-RAM technology. The device
specifications are guaranteed over an industrial temperature
range of –40
°C
to +85
°C.
For a complete list of related documentation, click
here.
4-Kbit ferroelectric random access memory (F-RAM) logically
organized as 512 × 8
14
High-endurance 100 trillion (10 ) read/writes
151-year data retention (See the
Data Retention and
Endurance
table)
NoDelay™ writes
Advanced high-reliability ferroelectric process
Very fast serial peripheral interface (SPI)
Up to 20 MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Low power consumption
200
μA
active current at 1 MHz
3
μA
(typ) standby current
Low-voltage operation: V
DD
= 2.7 V to 3.6 V
Industrial temperature: –40
°C
to +85
°C
Packages
8-pin small outline integrated circuit (SOIC) package
8-pin thin dual flat no leads (DFN) package
Restriction of hazardous substances (RoHS) compliant
Logic Block Diagram
WP
CS
HOLD
SCK
Instruction Decoder
Clock Generator
Control Logic
Write Protect
512 x 8
F-RAM Array
Instruction Register
Address Register
Counter
SI
9
8
Data
I/
O Register
2
Nonvolatile Status
Register
SO
Cypress Semiconductor Corporation
Document Number: 001-86146 Rev. *G
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised August 10, 2015

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