FM16W08-SG datasheet, PDF - EEWORLD Datasheet

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FM16W08-SG: Categorystorage FRAM memory; File Size314KB，18 Pages; ManufacturerCypress Semiconductor

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FM16W08

64-Kbit (8 K × 8) Wide Voltage Bytewide

F-RAM Memory

64-Kbit (8 K × 8) Wide Voltage Bytewide F-RAM Memory

Features

■

Industrial temperature: –40

C

to +85

C

28-pin small outline integrated circuit (SOIC) package

Restriction of hazardous substances (RoHS) compliant

64-Kbit ferroelectric random access memory (F-RAM) logically

organized as 8 K × 8

❐

High-endurance 100 trillion (10 ) read/writes

❐

151-year data retention (see the

Data Retention and

Endurance

table)

❐

NoDelay™ writes

❐

Advanced high-reliability ferroelectric process

SRAM and EEPROM compatible

❐

Industry-standard 8 K × 8 SRAM and EEPROM pinout

❐

70-ns access time, 130-ns cycle time

Superior to battery-backed SRAM modules

❐

No battery concerns

❐

Monolithic reliability

❐

True surface mount solution, no rework steps

❐

Superior for moisture, shock, and vibration

❐

Resistant to negative voltage undershoots

Low power consumption

❐

Active current 12 mA (max)

❐

Standby current 20

A

(typ)

Wide voltage operation: V

= 2.7 V to 5.5 V

Functional Overview

The FM16W08 is a 8 K × 8 nonvolatile memory that reads and

writes similar to a standard SRAM. A ferroelectric random

access memory or F-RAM is nonvolatile, which means that data

is retained after power is removed. It provides data retention for

over 151 years while eliminating the reliability concerns,

functional disadvantages, and system design complexities of

battery-backed SRAM (BBSRAM). Fast write timing and high

write endurance make the F-RAM superior to other types of

memory.

The FM16W08 operation is similar to that of other RAM devices

and therefore, it can be used as a drop-in replacement for a

standard SRAM in a system. Minimum read and write cycle times

are equal. The F-RAM memory is nonvolatile due to its unique

ferroelectric memory process. These features make the

FM16W08 ideal for nonvolatile memory applications requiring

frequent or rapid writes.

The device is available in a 28-pin SOIC surface mount package.

Device specifications are guaranteed over the industrial

temperature range –40 °C to +85 °C.

For a complete list of related documentation, click

here.

■

Logic Block Diagram

Address Latch and Decoder

A12-0

A 12-0

8Kx8

F-RAM Array

Control

Logic

I/O Latch & Bus Driver

DQ 7-0

Cypress Semiconductor Corporation

Document Number: 001-86210 Rev. *F

•

198 Champion Court

•

San Jose

CA 95134-1709

•

408-943-2600

Revised September 8, 2015

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