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S70GL02GS11FHI010

Description
Memory architecture (format): FLASH Memory interface type: Parallel Memory capacity: 2Gb (256M x 8, 128M x 16) Memory type: Non-Volatile 3.3V 2Gbit
Categorystorage    The FLASH memory   
File Size311KB,19 Pages
ManufacturerCypress Semiconductor
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S70GL02GS11FHI010 Overview

Memory architecture (format): FLASH Memory interface type: Parallel Memory capacity: 2Gb (256M x 8, 128M x 16) Memory type: Non-Volatile 3.3V 2Gbit

S70GL02GS11FHI010 Parametric

Parameter NameAttribute value
Memory architecture (format)FLASH
Memory interface typeParallel
memory capacity2Gb (256M x 8, 128M x 16)
Operating Voltage2.7V ~ 3.6V
memory typeNon-Volatile
S70GL02GS
2Gbit (256MBytes), 3.0V Flash Memory
General Description
The Cypress S70GL02GS 2-Gigabit MirrorBit
®
Flash memory device is fabricated on 65 nm MirrorBit Eclipse process technology. This
device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that
allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than
standard single byte/word programming algorithms. This makes the device an ideal product for today’s embedded applications that
require higher density, better performance and lower power consumption.
This document contains information for the S70GL02GS device, which is a dual die stack of two S29GL01GS die. For detailed
specifications, please refer to the discrete die datasheet.
Document
S29GL01GS Datasheet
Cypress Document Number
001-98285
Distinctive Characteristics
CMOS 3.0 Volt Core with Versatile I/O™
Two 1024 Megabit (S29GL01GS) in a single 64-ball
Fortified-BGA package (see
S29GL01GS datasheet
for full
specifications)
65 nm MirrorBit Eclipse™ process technology
Single supply (V
CC
) for read / program / erase (2.7V to 3.6V)
Versatile I/O Feature
– Wide I/O voltage (VIO): 1.65V to V
CC
x16 data bus
16-word/32-byte page read buffer
512-byte Programming Buffer
– Programming in Page multiples, up to a maximum of 512
bytes
Sector Erase
– Uniform 128-Kbytes sectors
– S70GL02GS: two thousand forty-eight sectors
Suspend and Resume commands for Program and Erase
operations
Status Register, Data Polling, and Ready/Busy pin methods
to determine device status
Advanced Sector Protection (ASP)
– Volatile and non-volatile protection methods for each
sector
Separate 1024-bye One Time Program (OTP) array with two
lockable regions
– Available in each device Support for CFI (Common Flash
Interface)
WP# input
– Protects first or last sector, or first and last sectors of each
device, regardless of sector protection settings
Industrial temperature range (
40°C to +85°C)
Automotive AEC-Q100 Grade 3 (
40°C to +85°C)
Automotive AEC-Q100 Grade 2 (
40°C to +105°C)
100,000 erase cycles per sector typical
20-year data retention typical
Packaging Options
– 64-ball LSH Fortified BGA, 13 mm
11 mm
Cypress Semiconductor Corporation
Document Number: 001-98296 Rev. *I
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised June 15, 2017
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