DMN31D5UFZ
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
max
1.5Ω @ V
GS
= 4.5V
I
D
max
T
A
= +25°C
Features and Benefits
•
•
•
0.22A
•
•
•
•
Low Package Profile, 0.42mm Maximum Package Height
0.62mm x 0.62mm Package Footprint
Low On-Resistance
Very Low Gate Threshold Voltage, 1.0V max
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
NEW PRODUCT
ADVANCED INFORMATION
NEW PRODUCT
30V
2.0Ω @ V
GS
= 2.5V
3.0Ω @ V
GS
= 1.8V
4.5Ω @ V
GS
= 1.5V
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
•
•
•
•
•
Case: X2-DFN0606-3
Case Material: Molded Plastic, “Green” Molding Compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper leadframe
Solderable per MIL-STD-202, Method 208
e4
Weight: 0.001 grams (approximate)
Applications
•
•
•
General Purpose Interfacing Switch
Power Management Functions
Analog Switch
ESD PROTECTED
Bottom View
Equivalent Circuit
Top View
Package Pin Configuration
Ordering Information
(Note 4)
Part Number
DMN31D5UFZ-7B
Notes:
Case
X2-DFN0606-3
Packaging
10K/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
R6 = Product Type Marking Code
Top View
Bar Denotes Gate
and Source Side
DMN31D5UFZ
Document number: DS36843 Rev. 2 - 2
1 of 6
www.diodes.com
June 2014
© Diodes Incorporated
DMN31D5UFZ
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5)
Steady
State
T
A
= +25°C
T
A
= +85°C
Symbol
V
DSS
V
GSS
I
D
I
DM
Value
30
±12
220
150
500
Units
V
V
mA
mA
NEW PRODUCT
ADVANCED INFORMATION
NEW PRODUCT
Pulsed Drain Current (Note 6)
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Steady state
Steady state
Symbol
P
D
R
θJA
T
J,
T
STG
Value
393
318
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
0.4
—
—
Static Drain-Source On-Resistance
R
DS(ON)
—
—
—
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
BV
DSS
@T
C
= +25°C
I
DSS
I
GSS
Min
30
—
—
Typ
—
—
—
—
—
—
—
—
2.8
0.75
22.2
2.9
2.2
0.35
0.05
0.02
3.1
2.0
20
6.9
Max
—
100
±10
1.0
1.5
2.0
3.0
4.5
—
1.0
—
—
—
—
—
—
—
—
—
—
Unit
V
nA
μA
V
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 24V, V
GS
= 0V
V
GS
= ±10V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 4.5V, I
D
= 100mA
V
GS
= 2.5V, I
D
= 50mA
Ω
V
GS
= 1.8V, I
D
= 20mA
V
GS
= 1.5V, I
D
= 10mA
V
GS
= 1.2V, I
D
= 1mA
V
SD
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
—
—
—
—
—
—
—
—
—
—
—
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
GS
= 0V, I
S
= 10mA
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
V
GS
= 4.5V, V
DS
= 15V,
I
D
= 200mA
V
DD
= 10V, V
GS
= 4.5V,
R
G
= 6Ω, I
D
= 200mA
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMN31D5UFZ
Document number: DS36843 Rev. 2 - 2
2 of 6
www.diodes.com
June 2014
© Diodes Incorporated
DMN31D5UFZ
0.8
0.7
I
D
, DRAIN CURRENT (A)
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
0.5
1
1.5
2
2.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
3
V
GS
= 1.2V
V
GS
= 10V
V
GS
= 4.5V
V
GS
= 4.0V
V
GS
=2.0V
V
GS
= 1.8V
0.8
V
DS
= 5.0V
0.7
I
D
, DRAIN CURRENT (A)
V
GS
= 2.5V
V
GS
= 3.0V
V
GS
= 1.5V
0.6
0.5
0.4
0.3
0.2
0.1
0
0
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
NEW PRODUCT
ADVANCED INFORMATION
NEW PRODUCT
0.5
1
1.5
2
2.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
3
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
3
3
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
V
GS
= 4.5V
2.5
V
GS
= 1.2V
2.5
T
A
= 150°C
T
A
= 125°C
2
V
GS
= 1.5V
V
GS
= 1.8V
V
GS
= 2.5V
2
1.5
1.5
T
A
= 85°C
1
V
GS
= 4.5V
1
T
A
= 25°C
T
A
= -55°C
0.5
0.5
0
0
0.2
0.4
0.6
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
0.8
0
0
0.2
0.4
0.6
I
D
, DRAIN CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
0.8
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.6
V
GS
= 2.5V
I
D
= 50mA
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
1.8
2
1.6
V
GS
= 2.5V
I
D
= 50mA
1.4
1.2
V
GS
= 4.5V
I
D
= 100mA
1.2
0.8
1
0.8
0.4
0.6
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 5 On-Resistance Variation with Temperature
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 6 On-Resistance Variation with Temperature
DMN31D5UFZ
Document number: DS36843 Rev. 2 - 2
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June 2014
© Diodes Incorporated
DMN31D5UFZ
1
V
GS(th)
, GATE THRESHOLD VOLTAGE (V)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
-50
I
D
= 250µA
I
D
= 1mA
0.8
0.7
I
S
, SOURCE CURRENT (A)
0.6
0.5
0.4
T
A
= 150°C
NEW PRODUCT
ADVANCED INFORMATION
NEW PRODUCT
0.3
T
A
= 125°C
0.2
0.1
0
0
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
0.3
0.6
0.9
1.2
1.5
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
100
10
V
GS
GATE THRESHOLD VOLTAGE (V)
f = 1MHz
C
T
, JUNCTION CAPACITANCE (pF)
8
C
iss
6
V
DS
= 15V
I
D
= 200mA
10
4
C
oss
C
rss
2
1
0
5
10
15
20
25
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
1
D = 0.9
D = 0.7
D = 0.5
30
0
0
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8
Q
g
, TOTAL GATE CHARGE (nC)
Figure 10 Gate Charge
0.9
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
D = Single Pulse
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 313°C/W
Duty Cycle, D = t1/ t2
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Figure 11 Transient Thermal Resistance
10
100
1000
0.001
0.000001 0.00001
DMN31D5UFZ
Document number: DS36843 Rev. 2 - 2
4 of 6
www.diodes.com
June 2014
© Diodes Incorporated
DMN31D5UFZ
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
A 1
Seating Plane
D
NEW PRODUCT
ADVANCED INFORMATION
NEW PRODUCT
e / 2
D 3
D 2
e
E 2
E
X2-DFN0606-3
Dim Min Max
Typ
A
0.36 0.42 0.39
A1
0
0.05 0.02
b
0.10 0.20 0.15
D
0.57 0.67 0.62
D2
0.155 BSC
D3
0.185 BSC
E
0.57 0.67 0.62
E2
0.40 0.60 0.50
e
0.35 BSC
k
0.16 REF
L
0.09 0.21 0.15
L2
0.11 0.31 0.21
All Dimensions in mm
b
︵
2 x
k
︶
L 2
L
︵
2 x
︶
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
Y
C
Y 1
Value
(in mm)
0.350
0.280
0.350
0.760
0.200
0.600
Dimensions
C
X
X1
X2
Y
Y1
X 1
X 2
DMN31D5UFZ
Document number: DS36843 Rev. 2 - 2
5 of 6
www.diodes.com
June 2014
© Diodes Incorporated
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