Green
FZT955
140V PNP MEDIUM POWER TRANSISTOR IN SOT223
Features
BV
CEO
> -140V
I
C
= -4A High Continuous Collector Current
I
CM
= -10A Peak Pulse Current
Low Saturation Voltage V
CE(sat)
< -150mV @ -1A
h
FE
Specified up to -10A for a High Gain Hold-up
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT223
Case material: Molded Plastic. “Green” Molding Compound;
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads; Solderable per MIL-
STD-202, Method 208
Weight: 0.112 grams (Approximate)
SOT223
C
B
E
Top View
Device Symbol
Top View
Pin-Out
Ordering Information
(Notes 4)
Product
FZT955TA
Notes:
Marking
FZT955
Reel size (inches)
7
Tape width (mm)
12
Quantity per reel
1,000
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4.
For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT223
FZT
955
FZT955
Da
tasheet Number: DS33190 Rev. 6 - 2
YWW
FZT 955 = Product Type Marking Code
YWW = Date Code Marking
Y or Y = Last Digit of Year (ex: 5= 2015)
WW or WW = Week Code (01~53)
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November 2016
© Diodes Incorporated
FZT955
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
Value
-180
-140
-7
-4
-10
Unit
V
V
V
A
A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
Thermal Resistance Junction to Lead
Operating and Storage Temperature Range
(Note 5)
P
D
(Note 6)
(Note 5)
(Note 6)
(Note 7)
R
JA
R
JA
R
JL
T
J,
T
STG
Symbol
Value
3.0
24
1.6
12.8
42
78
8.84
-55 to +150
Unit
W
mW/°C
°C/W
°C
ESD Ratings
(Note 8)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3B
C
5. For a device mounted with the collector lead on 52mm x 52mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in steady-state.
6. Same as Note 5, except the device is mounted on 25mm x 25mm 1oz copper.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
FZT955
Da
tasheet Number: DS33190 Rev. 6 - 2
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© Diodes Incorporated
FZT955
Thermal Characteristics and Derating Information
Limit
Max Power Dissipation (W)
-I
C
Collector Current (A)
10
V
CE(sat)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25mmX25mm
single sided 1 oz Cu
52mmX52mm
single sided 2 oz Cu
1
DC
1s
100ms
10ms
Single Pulse. T
amb
=25°C
52mmX52mm
single sided 2oz Cu
1ms
100µs
100m
10m
100m
1
10
100
20
40
60
80
100 120 140 160
-V
CE
Collector-Emitter Voltage (V)
Temperature (°C)
Safe Operating Area
Derating Curve
Single Pulse. T
amb
=25°C
Thermal Resistance (°C/W)
40
30
Max Power Dissipation (W)
52mmX52mm
single sided 2 oz Cu
100
52mmX52mm
single sided 2oz Cu
D=0.5
20
D=0.2
Single Pulse
D=0.05
D=0.1
10
10
0
100µ
1m
10m 100m
1
10
100
1k
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
FZT955
Da
tasheet Number: DS33190 Rev. 6 - 2
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© Diodes Incorporated
FZT955
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Symbol
BV
CBO
BV
CER
BV
CEO
BV
EBO
I
CBO
I
CER
R
≤
1kΩ
I
EBO
h
FE
Min
-180
-180
-140
-7
-
-
Typ.
-210
-210
-170
-8
<1
-
Max
-
-
-
-
-50
-1
-50
-1
-10
-
300
-
-
-60
-120
-150
-370
-1,110
-950
-
-
-
-
Unit
V
V
V
V
nA
µA
nA
µA
-
-
<1
-
DC Current Transfer Static Ratio (Note 9)
-
100
100
75
-
-
-
-
-
Collector-Emitter Saturation Voltage (Note 9)
V
CE(sat)
V
BE(sat)
V
BE(on)
f
T
C
obo
t
ON
t
OFF
Base-Emitter Saturation Voltage (Note 9)
Base-Emitter Turn-On Voltage (Note 9)
Transitional Frequency (Note 9)
Output Capacitance
Switching Time
Note:
-
-
-
-
-
-
-
200
200
140
10
-30
-70
-110
-275
-970
-830
110
40
68
1,030
nA
-
mV
mV
mV
MHz
pF
ns
Test Condition
I
C
= -100µA
I
C
= -1µA, R
B
≤
1kΩ
I
C
= -10mA
I
E
= -100µA
V
CB
= -150V
V
CB
= -150V, T
A
= +100°C
V
CE
= -150V
V
CE
= -150V, T
A
= +100°C
V
EB
= -6V
I
C
= -10mA, V
CE
= -5V
I
C
= -1A, V
CE
= -5V
I
C
= -3A, V
CE
= -5V
I
C
= -10A, V
CE
= -5V
I
C
= -100mA, I
B
= -5mA
I
C
= -500mA, I
B
= -50mA
I
C
= -1A, I
B
= -100mA
I
C
= -3A, I
B
= -300mA
I
C
= -3A, I
B
= -300mA
I
C
= -3A, V
CE
= -5V
I
C
= -100mA, V
CE
= -10V,
f = 50MHz
V
CB
= -20V, f = 1MHz
V
CC
= -50V, I
C
= -1A,
-I
B1
= I
B2
= -100mA
9. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.
FZT955
Da
tasheet Number: DS33190 Rev. 6 - 2
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November 2016
© Diodes Incorporated
FZT955
Typical Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
FZT955
Da
tasheet Number: DS33190 Rev. 6 - 2
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© Diodes Incorporated
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