The AP2281 slew rate controlled load switch is a single P-channel
MOSFET power switch designed for high-side load-switching
applications. The MOSFET has a typical R
DS(ON)
of 80m at 5V,
allowing increased load current handling capacity with a low forward
voltage drop. The turn-on slew rate of the device is controlled
internally.
The AP2281 load switch is designed to operate from 1.5V to 6V,
making it ideal for 1.8V, 2.5V, 3.3V, and 5V systems. The typical
quiescent supply current is only 0.01µA.
Pin Assignments
( Top View )
IN
IN
EN
1
2
3
6
OUT
OUT
GND
7
5
4
Features
Wide input voltage range: 1.5V – 6V
Low R
DS(ON)
: 80mΩ typical @ 5V
Turn-on slew rate controlled
AP2281-1: 1ms turn-on rise time
AP2281-3: 100µs turn-on rise time with internal discharge
Very low turn-on quiescent current: << 1µA
Fast load discharge option
Temperature range -40°C to +85°C
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
U-DFN2018-6
(Top View)
OUT 1
GND 2
EN 3
SOT26
6 IN
5 GND
4 IN
Applications
Smart Phones
PDA
Cell Phones
GPS Navigators
PMP/MP4
Notebook and Pocket PC
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
Stresses greater than the 'Absolute Maximum Ratings' specified above, may cause permanent damage to the device. These are stress ratings only; functional
operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may be affected by exposure to
absolute maximum rating conditions for extended periods of time.
Recommended Operating Conditions
(@T
A
= +25°C, unless otherwise specified.)
Symbol
V
IN
I
OUT
T
A
Input voltage
Output Current
Operating Ambient Temperature
Parameter
Min
1.5
0
-40
Max
6.0
2.0
+85
Unit
V
A
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Symbol
I
Q
I
SHDN
I
LEAK
Parameters
Input Quiescent Current
Input Shutdown Current
Input Leakage Current
Test Conditions
V
EN
= V
IN
, I
OUT
= 0
V
EN
= 0V, OUT open
V
EN
= 0V, OUT grounded
V
IN
= 5.0V
R
DS(ON)
Switch on-resistance
V
IN
= 3.3V
V
IN
= 1.8V
V
IN
= 1.5V
V
IL
V
IH
I
SINK
T
D(ON)
T
ON
T
D(OFF)
R
DISCH
θ
JA
EN Input Logic Low Voltage
EN Input Logic High Voltage
EN Input leakage
Output turn-on delay time
Output turn-on rise time
Output turn-off delay time
Discharge FET on-resistance
Thermal Resistance Junction-to-Ambient
V
IN
= 1.5V to 6V
1.5V
≤
V
IN
≤
2.7V
2.7V < V
IN
< 5.25V
V
IN
≥
5.25V
V
EN
= 5V
R
LOAD
= 10Ω
AP2281-1, R
LOAD
= 10Ω
AP2281-3, R
LOAD
= 10Ω
R
LOAD
= 10Ω
For AP2281-3 only, V
EN
= GND
SOT26 (Note 6)
U-DFN2018-6 (Note 7)
SOT26 (Note 6)
θ
JC
Notes:
Min
—
—
—
—
—
—
—
—
1.4
1.6
1.7
—
—
—
—
—
—
—
—
—
—
Typ
0.01
0.01
0.01
80
95
160
210
—
—
—
—
—
1
1000
100
0.5
65
153
78
29
19
Max
1
1
1
100
120
210
280
0.4
—
—
—
1
—
1500
150
1
100
—
—
—
—
Unit
μA
μA
μA
mΩ
mΩ
mΩ
mΩ
V
V
V
V
μA
μS
μS
μS
μS
Ω
°C/W
Thermal Resistance Junction-to-case
U-DFN2018-6 (Note 7)
°C/W
6. Test condition for SOT26: Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Test condition for U-DFN2018-6: Device mounted on FR-4 2-layer board, 2oz copper, with minimum recommended pad on top layer and 3 vias to bottom
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