MMBT3906FA
40V PNP SMALL SIGNAL TRANSISTOR IN DFN0806
Features
BV
CEO
> -40V
I
C
= -200mA high Collector Current
P
D
= 435mW Power Dissipation
2
0.48mm package footprint, 16 times smaller than SOT23
0.4mm height package minimizing off-board profile
Complementary NPN Type MMBT3904FA
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: X2-DFN0806-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
NiPdAu, Solderable per MIL-STD-202,
Method 208
e4
Weight: 0.0008 grams (approximate)
X2-DFN0806-3
C
B
C
E
B
E
Top View
Bottom View
Device Symbol
Top View
Device Schematic
Ordering Information
(Note 4)
Product
MMBT3906FA-7B
Notes:
Marking
3N
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
3N
Top View
Bar Denotes Base
and Emitter Side
3N = Product Type Marking Code
MMBT3906FA
Document number: DS36017 Rev. 1 - 2
1 of 7
www.diodes.com
July 2013
© Diodes Incorporated
MMBT3906FA
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
Value
-40
-40
-6.0
-200
-500
Unit
V
V
V
mA
mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Lead (Note 6)
Operating and Storage and Temperature Range
Symbol
P
D
R
JA
R
JL
T
J
, T
STG
Value
435
287
150
-55 to +150
Unit
mW
C/W
C/W
C
ESD Ratings
(Note 7)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
200
Unit
V
V
JEDEC Class
3A
B
5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured
under still air conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink.
6. Thermal resistance from junction to solder-point (on the exposed collector pad).
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
MMBT3906FA
Document number: DS36017 Rev. 1 - 2
2 of 7
www.diodes.com
July 2013
© Diodes Incorporated
MMBT3906FA
Thermal Characteristics and Derating Information
0.45
V
CE(sat)
Limited
Max Power Dissipation (W)
- I
C
Collector Current (A)
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0
20
40
60
80
100 120 140 160
100m
DC
1s
100ms
10ms
10m
Single Pulse
T
amb
=25°C
1ms
100µs
100m
1
10
- V
CE
Collector-Emitter Voltage (V)
Temperature (°C)
Safe Operating Area
Thermal Resistance (°C/W)
300
275
T
amb
=25°C
250
225
200
175
D=0.5
150
125
100
D=0.2
Single Pulse
75
D=0.05
50
25
D=0.1
0
100µ 1m 10m 100m 1
10
100
Derating Curve
Single Pulse
T
amb
=25°C
Maximum Power (W)
100
1k
10
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
MMBT3906FA
Document number: DS36017 Rev. 1 - 2
3 of 7
www.diodes.com
July 2013
© Diodes Incorporated
MMBT3906FA
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 8)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS
(Note 8)
60
80
100
60
30
-0.65
2.0
0.1
100
3.0
300
300
-0.25
-0.40
-0.85
-0.95
4.5
10
12
10
400
60
I
C
= -100µA, V
CE
= -1.0V
I
C
= -1.0mA, V
CE
= -1.0V
I
C
= -10mA, V
CE
= -1.0V
I
C
= -50mA, V
CE
= -1.0V
I
C
= -100mA, V
CE
= -1.0V
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
I
C
= -10mA, I
B
= -1.0mA
I
C
=- 50mA, I
B
= -5.0mA
V
CB
= -5.0V, f = 1.0MHz, I
E
= 0
V
EB
= -0.5V, f = 1.0MHz, I
C
= 0
-4
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CEX
I
CBO
I
BL
Min
-40
-40
-6.0
Max
-50
-50
-50
Unit
V
V
V
nA
nA
nA
Test Condition
I
C
= -10µA, I
E
= 0
I
C
= -1.0mA, I
B
= 0
I
E
= -10µA, I
C
= 0
V
CE
= -30V, V
EB(OFF)
= -3.0V
V
CB
= -30V, I
E
= 0
V
CE
= -30V, V
EB(OFF)
= -3.0V
DC Current Gain
h
FE
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Note:
V
CE(sat)
V
BE(sat)
V
V
C
obo
C
ibo
h
ie
h
re
h
fe
h
oe
f
T
pF
pF
k
x 10
µS
MHz
V
CE
= -10V, I
C
= -1.0mA,
f = 1.0kHz
V
CE
= -20V, I
C
= -10mA,
f = 100MHz
V
CC
= -3.0V, I
C
= -10mA,
V
BE(off)
= 0.5V, I
B1
= -1.0mA
V
CC
= -3.0V, I
C
= -10mA,
I
B1
= I
B2
= -1.0mA
t
d
t
r
t
s
t
f
35
35
225
75
ns
ns
ns
ns
8. Measured under pulsed conditions. Pulse width
300µs. Duty cycle
2%.
MMBT3906FA
Document number: DS36017 Rev. 1 - 2
4 of 7
www.diodes.com
July 2013
© Diodes Incorporated
MMBT3906FA
Typical Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
0.20
I
B
= -2mA
I
B
= -1.6mA
I
B
= -1.8mA
400
350
h
FE
, DC CURRENT GAIN
300
T
A
= 125°C
T
A
= 150°C
V
CE
= 1V
-I
C
, COLLECTOR CURRENT (A)
0.16
I
B
= -1.4mA
I
B
= -1.2mA
0.12
I
B
= -1mA
I
B
= -0.8mA
250
200
T
A
= 85°C
0.08
T
A
= 25°C
I
B
= -0.6mA
I
B
= -0.4mA
150
100
50
0
1
10
100
-I
C
, COLLECTOR CURRENT (mA)
Fig. 5 Typical DC Current Gain vs. Collector Current
1
0.04
I
B
= -0.2mA
T
A
= -55°C
0
0
1
2
3
4
5
-V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
I
C
/I
B
= 10
1
I
C
/I
B
= 20
-V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
-V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
0.1
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
0.1
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
0.01
1
10
100
1,000
-I
C
, COLLECTOR CURRENT (mA)
Fig. 6 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
0.01
0.1
1
10
100
1,000
-I
C
, COLLECTOR CURRENT (mA)
Fig. 7 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
-V
BE(SAT)
, BASE-EMITTER SATURATION VOLTAGE (V)
-V
BE(ON)
, BASE-EMITTER TURN-ON VOLTAGE (V)
1.2
Gain = 10
1.2
Gain = 10
1.0
1.0
0.8
T
A
= -55°C
0.8
T
A
= -55°C
0.6
T
A
= 25°C
T
A
= 150°C
0.6
T
A
= 25°C
T
A
= 150°C
0.4
T
A
= 85°C
T
A
= 125°C
0.4
T
A
= 125°C
T
A
= 85°C
0.2
0.1
1
10
100
1,000
-I
C
, COLLECTOR CURRENT (mA)
Fig. 8 Typical Base-Emitter Saturation Voltage
vs. Collector Current
0.2
0.1
MMBT3906FA
Document number: DS36017 Rev. 1 - 2
5 of 7
www.diodes.com
1
10
100
1,000
-I
C
, COLLECTOR CURRENT (mA)
Fig. 9 Typical Base-Emitter Saturation Voltage
vs. Collector Current
July 2013
© Diodes Incorporated
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