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ZVN3306FTA

Description
Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 150mA Gate-source threshold voltage: 2.4V @ 1mA Drain-source on-resistance: 5Ω @ 500mA, 10V Maximum power dissipation (Ta =25°C): 330mW Type: N-channel N-channel, 60V, 150mA
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size93KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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ZVN3306FTA Overview

Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 150mA Gate-source threshold voltage: 2.4V @ 1mA Drain-source on-resistance: 5Ω @ 500mA, 10V Maximum power dissipation (Ta =25°C): 330mW Type: N-channel N-channel, 60V, 150mA

ZVN3306FTA Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)60V
Continuous drain current (Id) at 25°C150mA
Gate-source threshold voltage2.4V @ 1mA
Drain-source on-resistance5Ω @ 500mA,10V
Maximum power dissipation (Ta=25°C)330mW
typeN channel
SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – JANUARY 1996
FEATURES
* R
DS(on)
= 5Ω
* 60 Volt V
DS
COMPLEMENTARY TYPE -
PARTMARKING DETAIL -
ZVP3306F
MC
ZVN3306F
S
D
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
Gate-Source Voltage
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
VALUE
60
150
3
±
20
330
-55 to +150
SOT23
UNIT
V
mA
A
V
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Drain-Source
Breakdown Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage
Drain Current
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
Forward Transconductance
(1)(2)
Input Capacitance (2)
Common Source
Output Capacitance (2)
Reverse Transfer Capacitance
(2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
SYMBOL MIN.
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
3 typ
4 typ
4 typ
5 typ
150
35
25
8
5
7
6
8
750
5
60
0.8
2.4
20
0.5
50
MAX. UNIT CONDITIONS.
V
V
nA
µA
µA
mA
mS
pF
pF
pF
ns
ns
ns
ns
V
DD
≈18V,
I
D
=500mA
V
DS
=18V, V
GS
=0V, f=1MHz
I
D
=1mA, V
GS
=0V
I
D
=1mA, V
DS
= V
GS
V
GS
=± 20V, V
DS
=0V
V
DS
=60V, V
GS
=0V
V
DS
=48V, V
GS
=0V, T=125°C
(2)
V
DS
=18V, V
GS
=10V
V
GS
=10V, I
D
=500mA
V
DS
=18V, I
D
=500mA
(1) Measured under pulsed conditions. Width=300µs. Duty cycle
≤2%
(2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
3 - 393

ZVN3306FTA Related Products

ZVN3306FTA
Description Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 150mA Gate-source threshold voltage: 2.4V @ 1mA Drain-source on-resistance: 5Ω @ 500mA, 10V Maximum power dissipation (Ta =25°C): 330mW Type: N-channel N-channel, 60V, 150mA
Drain-source voltage (Vdss) 60V
Continuous drain current (Id) at 25°C 150mA
Gate-source threshold voltage 2.4V @ 1mA
Drain-source on-resistance 5Ω @ 500mA,10V
Maximum power dissipation (Ta=25°C) 330mW
type N channel
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