BC847AT, BT, CT
45V NPN SMALL SIGNAL TRANSISTOR IN SOT523
Features
BV
CEO
> 45V
I
C
= 100mA Collector Current
Epitaxial Planar Die Construction
Ultra-Small Surface Mount Package
Complementary PNP Type: MMBT3906T
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT523
Case Material: Molded Plastic. ―Green‖ Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads. Solderable per
MIL-STD-202, Method 208
Weight: 0.002 grams (Approximate)
SOT523
C
B
E
Top View
Device Symbol
Pin-Out Top View
Ordering Information
(Note 4)
Part Number
BC847AT-7-F
BC847BT-7-F
BC847CT-7-F
Notes:
Compliance
AEC-Q101
AEC-Q101
AEC-Q101
Marking
1E
1F
1M
Reel Size (inches)
7
7
7
Tape Width (mm)
8
8
8
Quantity per Reel
3,000
3,000
3,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
XX YM
K2N
XX = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: D = 2016)
M or M = Month (ex: 9 = September)
Date Code Key
Year
2015
Code
C
Month
Code
Jan
1
2016
D
Feb
2
2017
E
Mar
3
2018
F
Apr
4
YM
2019
G
May
5
2020
H
Jun
6
2021
I
Jul
7
Aug
8
2022
J
Sep
9
2023
K
Oct
O
2024
L
Nov
N
2025
M
Dec
D
BC847AT, BT, CT
Document number: DS30274 Rev. 10 - 2
1 of 6
www.diodes.com
September 2016
© Diodes Incorporated
BC847AT, BT, CT
Absolute Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
50
45
6.0
100
Unit
V
V
V
mA
Thermal Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Symbol
P
D
R
θJA
T
J
, T
STG
Value
150
833
-55 to +150
Unit
mW
°
C/W
°
C
ESD Ratings
(Note 6)
Characteristic
Electrostatic Discharge – Human Body Model
Electrostatic Discharge – Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
5. For a device mounted with the collector lead on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR-4 PCB; device is
measured under still air conditions whilst operating in a steady-state.
6. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
Thermal Characteristics and Derating Information
P
D
, POWER DISSIPATION (mW)
BC847AT, BT, CT
Document number: DS30274 Rev. 10 - 2
2 of 6
www.diodes.com
September 2016
© Diodes Incorporated
BC847AT, BT, CT
Electrical Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
OFF CHARACTERISTICS (Note 7)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
ON CHARACTERISTICS (Note 7)
DC Current Gain
Current Gain A
B
C
Symbol
BV
CBO
BV
CEO
BV
EBO
Min
50
45
6.0
110
200
420
580
—
—
100
Typ
290
520
700
900
660
—
—
Max
220
450
800
250
600
Unit
V
V
V
Test Condition
I
C
= 10µA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10µA, I
C
= 0
h
FE
V
CE
= 5.0V, I
C
= 2.0mA
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5mA
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5mA
V
CE
= 5.0V, I
C
= 2.0mA
V
CE
= 5.0V, I
C
= 10mA
V
CB
= 30V
V
CB
= 30V, T
A
= +150°
C
V
CB
= 10V, f = 1.0MHz
V
CE
= 5V, I
C
= 10 A,
f = 100MHz
V
CE
= 5V, R
S
= 2kΩ,
f = 1MHz, BW = 200Hz
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Collector-Emitter Cutoff Current
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Noise Figure
Note:
V
CE(SAT)
V
BE(SAT)
V
BE
I
CBO
C
OBO
f
T
BC847BT
BC847CT
NF
mV
mV
mV
nA
µA
pF
MHz
dB
700
770
15
5.0
4.5
1.0
4.0
7. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
BC847AT, BT, CT
Document number: DS30274 Rev. 10 - 2
3 of 6
www.diodes.com
September 2016
© Diodes Incorporated
BC847AT, BT, CT
Typical Electrical Characteristics
1,000
V
CE
= 5V
T
A
= 100°
C
(@T
A
= +25° unless otherwise specified.)
C,
V
CE(SAT)
, COLLECTOR SATURATION VOLTAGE (V)
0.5
0.4
h
FE,
DC CURRENT GAIN
T
A
= 25°
C
100
T
A
= -50°
C
0.3
0.2
10
0.1
1
0.01
0.1
1.0
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 2, DC Current Gain vs Collector Current
1.0
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 3, Collector Saturation Voltage vs Collector Current
0
0.1
1,000
T = 25°
C
A
f
T
, GAIN BANDWIDTH PRODUCT (MHz)
V
CE
= 10V
V
CE
= 5V
V
CE
= 2V
100
10
0.1
1.0
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 4, Gain Bandwidth Product vs Collector Current
BC847AT, BT, CT
Document number: DS30274 Rev. 10 - 2
4 of 6
www.diodes.com
September 2016
© Diodes Incorporated
BC847AT, BT, CT
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT523
E
E1
e1
D
b
SOT523
Dim Min
Max
Typ
A
0.60 0.80
0.75
A1
0.00
0.10
0.05
A3
0.45
0.65
0.50
b
0.15
0.30
0.22
c
0.10
0.20
0.12
D
1.50
1.70
1.60
E
1.45
1.75
1.60
E1
0.75
0.85
0.80
e
0.50 BSC
e1
0.90
1.10
1.00
L
0.20
0.40
0.33
a
0°
--
8°
All Dimensions in mm
A2
A3
c
A1
e
L
a
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT523
Y1 C
Dimensions
C
X
X1
Y
Y1
Value
1.29
0.40
0.70
0.51
1.80
Y
X1
X
BC847AT, BT, CT
Document number: DS30274 Rev. 10 - 2
5 of 6
www.diodes.com
September 2016
© Diodes Incorporated
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