DSS5540X
40V LOW V
CE(sat)
PNP SURFACE MOUNT TRANSISTOR
Features
•
•
•
•
•
Ultra Low Collector-Emitter Saturation Voltage
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
“Lead Free”, RoHS Compliant (Note 1)
Halogen and Antimony Free. "Green" Device (Note 2)
Mechanical Data
•
•
•
•
•
Case: SOT89
Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Weight: 0.055 grams (approximate)
C
SOT89
E
B
C
E
C
B
Top View
Device Schematic
Pin-Out Top
Ordering Information
(Note 3)
Product
DSS5540X-13
Notes:
Marking
ZPS54
Reel size (inches)
13
Tape width (mm)
12mm
Quantity per reel
2,500
1. No purposefully added lead.
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
3. For packaging details, please go to our website at http://www.diodes.com
Marking Information
YWW
ZPS54
ZPS54 = Product Type Marking Code
= Manufacturer’s Code Marking
YWW = Date Code Marking
Y = Last digit of year (ex: 8 = 2008)
WW = Week code (01 – 53)
DSS5540X
Document number: DS31653 Rev. 2 - 2
1 of 5
www.diodes.com
October 2010
© Diodes Incorporated
DSS5540X
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Collector Current
Repetitive Peak Pulse Collector Current (Note 4)
Continuous Collector Current
Peak Pulse Base Current
Continuous Base Current
Symbol
V
CBO
V
CEO
V
EBO
I
CM
I
CRP
I
C
I
BM
I
B
Value
-40
-40
-6
-10
-5
-4
-2
-1
Unit
V
V
V
A
A
A
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 5) @ T
A
= 25°C
Thermal Resistance, Junction to Ambient Air (Note 5) @ T
A
= 25°C
Power Dissipation (Note 6) @ T
A
= 25°C
Thermal Resistance, Junction to Ambient Air (Note 6) @ T
A
= 25°C
Operating and Storage Temperature Range
Notes:
4. Pulse width
≤
10ms; Duty cycle
≤
0.2
5. Device mounted on FR-4 PCB with minimum recommended pad layout.
6. Device mounted on FR-4 PCB with 1inch
2
copper pad layout.
Symbol
P
D
R
θ
JA
P
D
R
θ
JA
T
J
, T
STG
Value
0.9
139
2
62.5
-55 to +150
Unit
W
°C/W
W
°C/W
°C
2.4
2.0
P
D
, POWER DISSIPATION (W)
1.6
1.2
Note 6
0.8
Note 5
0.4
0
0
50
100
150
200
T
A
, AMBIENT TEMPERATURE (
°
C)
Fig. 1 Power Dissipation vs. Ambient Temperature
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
R
θJA
(t) = r(t) * R
θ
JA
R
θ
JA
= 135°C/W
P(pk)
D = 0.02
0.01
D = 0.01
D = 0.005
t
1
t
2
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/t
2
D = Single Pulse
0.001
0.00001 0.0001
0.001
0.01
0.1
1
10
t
1
, PULSE DURATION TIME (s)
Fig. 2 Transient Thermal Response
100
1,000
10,000
DSS5540X
Document number: DS31653 Rev. 2 - 2
2 of 5
www.diodes.com
October 2010
© Diodes Incorporated
DSS5540X
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 7)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
Min
-40
-40
-6
⎯
⎯
⎯
250
200
150
50
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
60
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ
⎯
⎯
⎯
⎯
⎯
⎯
⎯
350
⎯
⎯
⎯
⎯
-70
-165
-150
-30
⎯
⎯
⎯
⎯
⎯
63
15
48
280
232
48
Max
⎯
⎯
⎯
-100
-50
-100
⎯
⎯
⎯
⎯
-120
-170
-160
-340
-375
-75
-1.1
-1.2
-1.0
⎯
105
⎯
⎯
⎯
⎯
⎯
⎯
Unit
V
V
V
nA
μA
nA
⎯
Test Conditions
I
C
= -100μA
I
C
= -10mA
I
E
= -100μA
V
CB
= -30V, I
E
= 0
V
CB
= -30V, I
E
= 0, T
A
= 150°C
V
EB
= -5V, I
C
= 0
V
CE
= -2V, I
C
= -0.5A
V
CE
= -2V, I
C
= -1A
V
CE
= -2V, I
C
= -2A
V
CE
= -2V, I
C
= -5A
I
C
= -0.5A, I
B
= -5mA
I
C
= -1A, I
B
= -10mA
I
C
= -2A, I
B
= -200mA
I
C
= -4A, I
B
= -200mA
I
C
= -5A, I
B
= -500mA
I
C
= -5A, I
B
= -500mA
I
C
= -4A, I
B
= -200mA
I
C
= -5A, I
B
= -500mA
V
CE
= -2V, I
C
= -2A
V
CE
= -10V, I
C
= -0.1A, f = 100MHz
V
CB
= -10V, I
E
= 0A, f = 1MHz
DC Current Gain (Note 6)
Collector-Emitter Saturation Voltage (Note 7)
V
CE(sat)
mV
Equivalent On-Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
Transition Frequency
Collector Capacitance
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Notes:
R
CE(sat)
V
BE(sat)
V
BE(on)
f
T
C
c
t
on
t
d
t
r
t
off
t
s
t
f
mΩ
V
V
MHz
pF
ns
ns
ns
ns
ns
ns
V
CC
= -10V, I
C
= -2A,
I
B1
= -I
B2
= -200mA
7. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle
≤2%.
2.2
2.0
I
C
, COLLECTOR CURRENT (A)
1.8
I
B
= -5mA
1,000
V
CE
= -1V
800
h
FE
, DC CURRENT GAIN
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
I
B
= -4mA
600
I
B
= -3mA
400
T
A
= 25°C
I
B
= -2mA
200
I
B
= -1mA
T
A
= -55°C
1
2
3
4
5
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 3 Typical Collector Current vs. Collector-Emitter Voltage
0
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
Fig. 4 Typical DC Current Gain vs. Collector Current
DSS5540X
Document number: DS31653 Rev. 2 - 2
3 of 5
www.diodes.com
October 2010
© Diodes Incorporated
DSS5540X
1
I
C
/I
B
= 10
V
BE(ON)
, BASE-EMITTER TURN-ON VOLTAGE (V)
1.0
V
CE
= -2V
V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
0.8
0.1
0.6
T
A
= -55°C
T
A
= 150°C
0.01
T
A
= 125°C
T
A
= 85°C
T
A
= -55°C
T
A
= 25°C
0.4
T
A
= 25°C
T
A
= 85°C
0.2
T
A
= 150°C
T
A
= 125°C
0.001
0.0001
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
Fig. 5 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
0
0.0001
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
Fig. 6 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
V
BE(SAT)
, BASE-EMITTER SATURATION VOLTAGE (V)
1.2
1,000
f = 1MHz
1.0
I
C
/I
B
= 10
0.8
T
A
= -55°C
CAPACITANCE (pF)
C
ibo
0.6
T
A
= 25°C
100
C
obo
0.4
T
A
= 150°C
T
A
= 85°C
T
A
= 125°C
0.2
0
0.0001
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
Fig. 7 Typical Base-Emitter Saturation Voltage
vs. Collector Current
10
0.1
1
10
V
R
, REVERSE VOLTAGE (V)
Fig. 8 Typical Capacitance Characteristics
100
Package Outline Dimensions
D1
.
R0
20
0
C
E
H
B
B1
e1
8°
(4 X
)
L
e
A
SOT89
Dim
Min
Max
A
1.40
1.60
B
0.44
0.62
B1
0.35
0.54
C
0.35
0.43
D
4.40
4.60
D1
1.52
1.83
E
2.29
2.60
e
1.50 Typ
e1
3.00 Typ
H
3.94
4.25
L
0.89
1.20
All Dimensions in mm
D
DSS5540X
Document number: DS31653 Rev. 2 - 2
4 of 5
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October 2010
© Diodes Incorporated
DSS5540X
Suggested Pad Layout
X1
X2 (2x)
Y1
Y3
Y
Y2
C
X (3x)
Y4
Dimensions Value (in mm)
X
0.900
X1
1.733
X2
0.416
Y
1.300
Y1
4.600
Y2
1.475
Y3
0.950
Y4
1.125
C
1.500
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR
PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other
changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising
out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under
its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such
applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are
represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales
channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall
indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising
out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and
markings noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the
express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A.
Life support devices or systems are devices or systems which:
1.
2.
B.
are intended to implant into the body, or
support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in
the labeling can be reasonably expected to result in significant injury to the user.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems,
and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their
products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices-
or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes
Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life
support devices or systems.
Copyright © 2010, Diodes Incorporated
www.diodes.com
DSS5540X
Document number: DS31653 Rev. 2 - 2
5 of 5
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October 2010
© Diodes Incorporated
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