FCX458
400V NPN HIGH VOLTAGE TRANSISTOR IN SOT89
Features
BV
CEO
> 400V
I
C
= 225mA Continuous Collector Current
I
CM
= 500mA Peak Pulse Current
Excellent h
FE
Characteristics up to 100mA
Low saturation voltage V
CE(sat)
< 200mV @ 20mA
Complementary PNP Type: FCX558
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT89
Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads,
Solderable per MIL-STD-202, Method 208
Weight: 0.055 grams (Approximate)
SOT89
C
E
B
C
C
B
E
Top View
Equivalent Circuit
Top View
Pin-Out
Ordering Information
(Note 4)
Product
FCX458TA
Notes:
Compliance
AEC-Q101
Marking
N58
Reel size (inches)
7
Tape width (mm)
12mm
Quantity per reel
1,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green"
and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
.
Marking Information
N1
N58
N58 = Product Type Marking Code
FCX458
Document number: DS33053 Rev. 7 - 2
1 of 7
www.diodes.com
April 2017
© Diodes Incorporated
FCX458
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
Value
400
400
7
225
500
200
Unit
V
V
V
mA
mA
mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
(Note 5)
(Note 6)
(Note 7)
(Note 8)
(Note 5)
(Note 6)
(Note 7)
(Note 8)
(Note 9)
Symbol
Value
0.7
1
1.5
2
178
125
83
60
22
-65 to +150
°C
Unit
Power Dissipation
P
D
W
Thermal Resistance, Junction to Ambient Air
R
JA
°C/W
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
R
JL
T
J,
T
STG
ESD Ratings
(Note 10)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
5. For a device mounted with the exposed collector pad on minimum recommended pad layout (MRP) 1oz copper that is on a single-sided
1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state.
6. Same as Note 5, except the device is mounted with the exposed collector pad on 15mm x 15mm 1oz copper.
7. Same as Note 5, except the device is mounted with the exposed collector pad on 25mm x 25mm 1oz copper.
8. Same as Note 5, except the device is mounted with the exposed collector pad on 50mm x 50mm 1oz copper.
9. Thermal resistance from junction to solder-point (on the exposed collector pad).
10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
Thermal Characteristics and Derating Information
Thermal Resistance (°C/W)
140.0
3
Maximum Power (W)
120.0
100.0
80.0
1oz copper
T
A
=25°C
2oz copper
2
1oz copper
1
60.0
40.0
0
500
1000
2oz copper
0
2000
2500
0
500
1000
1500
2000
2500
1500
Copper Area (sqmm)
FCX458
Document number: DS33053 Rev. 7 - 2
Copper Area (sqmm)
2 of 7
www.diodes.com
April 2017
© Diodes Incorporated
FCX458
Thermal Characteristics and Derating Information
(cont.)
Max Power Dissipation (W)
15mm x 15mm 1oz FR4 PCB
Max Power Dissipation (W)
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
20
40
60
80
100 120 140 160
1.0
MRP 1oz FR4 PCB
0.8
0.6
0.4
0.2
0.0
0
20
40
60
80
100 120 140 160
Temperature (°C)
Temperature (°C)
Derating Curve
130
120
15mm x 15mm 1oz FR4 PCB
110
100
90
80
70
D=0.5
60
50
40
D=0.2
Single Pulse
30
D=0.05
20
10
D=0.1
0
100µ 1m 10m 100m 1
10
100
1k
100
Derating Curve
Thermal Resistance (°C/W)
15mm x 15mm 1oz FR4 PCB
Maximum Power (W)
Single Pulse
T
A
=25°C
10
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
180
100
Pulse Power Dissipation
Thermal Resistance (°C/W)
160
MRP 1oz FR4 PCB
140
120
100
D=0.5
80
60
40
20
0
100µ
1m
10m 100m
D=0.2
Single Pulse
D=0.05
D=0.1
MRP 1oz FR4 PCB
Maximum Power (W)
Single Pulse
T
A
=25°C
10
1
100µ
1m
10m 100m
1
10
100
1k
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
FCX458
Document number: DS33053 Rev. 7 - 2
3 of 7
www.diodes.com
April 2017
© Diodes Incorporated
FCX458
Electrical Characteristics
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 11)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage (Note 11)
Base-Emitter Saturation Voltage (Note 11)
Base-Emitter Turn-On Voltage (Note 11)
DC Current Gain (Note 11)
(@T
A
= +25°C, unless otherwise specified.)
Symbol
BV
CBO
BV
CES
BV
CEO
BV
EBO
I
CBO
I
CES
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
Min
400
400
400
7
—
—
—
—
—
Typ
550
550
450
8.1
<1
<1
<1
—
—
Max
—
—
—
100
100
20
200
500
900
900
300
Unit
V
V
V
V
nA
nA
nA
mV
mV
mV
—
Test Condition
I
C
= 100µA
I
C
= 100µA
I
C
= 1mA
I
E
= 100µA
V
CB
= 320V
V
CES
= 320V
V
EB
= 6V
I
C
= 20mA, I
B
= 2mA
I
C
= 50mA, I
B
= 6mA
I
C
= 50mA, I
B
= 5mA
I
C
= 50mA, V
CE
= 10V
I
C
= 1mA, V
CE
= 10V
I
C
= 50mA, V
CE
= 10V
I
C
= 100mA, V
CE
= 10V
I
C
= 10mA, V
CE
= 20V,
f = 20MHz
V
CB
= 20V. f = 1MHz
I
C
=50mA, V
CE
=100V,
I
B1
= 5mA, I
B2
= -10mA
—
—
100
100
15
50
—
—
—
—
—
—
Transitional Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
Note:
f
T
C
obo
t
on
t
off
—
—
135
2260
—
5
—
—
MHz
pF
ns
ns
11. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%
FCX458
Document number: DS33053 Rev. 7 - 2
4 of 7
www.diodes.com
April 2017
© Diodes Incorporated
FCX458
Typical Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
FCX458
Document number: DS33053 Rev. 7 - 2
5 of 7
www.diodes.com
April 2017
© Diodes Incorporated
京公网安备 11010802033920号
EEWORLD
