ZXMC3F31DN8
30V SO8 Complementary dual enhancement mode
MOSFET
Summary
Device
Q1
Q2
V
(BR)DSS
(V)
30
-30
Q
G
(nC)
12.9
12.7
R
DS(on)
(Ω)
0.024 @ V
GS
= 10V
0.039 @ V
GS
= 4.5V
0.045 @ V
GS
= -10V
0.080 @ V
GS
= -4.5V
I
D
(A)
7.3
5.7
5.3
4
Description
This new generation Trench MOSFET from Zetex has been designed to
minimize the on-state resistance (R
DS(on)
) and yet maintain superior
switching performance making it ideal for power management and
battery charging functions.
Features
•
•
•
Low on-resistance
4.5V gate drive capability
Low profile SOIC package
D1
D2
Applications
•
•
•
•
•
G1
S1
Q1 N-Channel
G2
S2
Q2 P-Channel
DC-DC Converters
SMPS
Load switching switches
Motor control
Backlighting
Ordering information
Device
ZXMC3F31DN8TA
Reel size
(inches)
7
Tape width
(mm)
12
Quantity
per reel
500
S1
G1
S2
D1
N
P
D1
D2
D2
Device marking
ZXMC
3F31
G2
Top view
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ZXMC3F31DN8
Absolute maximum ratings
Parameter
Symbol
N-
channel
Q1
30
P-
channel
Q2
-30
Unit
Drain-Source voltage
Gate-Source voltage
Continuous Drain current @ V
GS
= 10V; T
A
=25°C
@ V
GS
= 10V; T
A
=70°C
@ V
GS
= 10V; T
A
=25°C
@ V
GS
= 10V; T
A
=25°C
@ V
GS
= 10V; T
L
=25°C
Pulsed Drain current
(c)
(b)(d)
(b)(d)
(b)(d)
(a)(d)
(a)(e)
(f)(d)
V
DSS
V
GS
I
D
V
V
A
±20
7.3
5.9
5.7
6.8
7.8
±20
5.3
4.3
4.1
4.9
5.7
23
3.2
23
1.25
10
1.8
14
2.1
17
2.35
19
I
DM
I
S
I
SM
P
D
P
D
P
D
P
D
T
j
, T
stg
33
3.5
33
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
°C
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
Power dissipation at T
A
=25°C
Linear derating factor
Power dissipation at T
A
=25°C
Linear derating factor
Power dissipation at T
A
=25°C
Linear derating factor
Power dissipation at T
L
=25°C
Linear derating factor
(a)(d)
(a)(e)
(b)(d)
(f) (d)
(c)(d)
Operating and storage temperature range
-55 to 150
Thermal resistance
Parameter
Junction to ambient
Junction to ambient
Junction to ambient
Junction to lead
NOTES:
(a)
(b)
(c)
(d)
(e)
(f)
For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still
air conditions.
Mounted on FR4 PCB measured at t
≤
10 sec.
Repetitive rating on 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us – pulse width limited by maximum junction
temperature.
For a device with one active die.
For a device with two active die running at equal power.
Thermal resistance from junction to solder-point (at the end of the drain lead).
Symbol
(a)(d)
(a)(e)
(b)(d)
Value
100
70
60
53
Unit
°C/W
°C/W
°C/W
°C/W
R
θJA
R
θJA
R
θJA
R
θJL
(f) (d)
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ZXMC3F31DN8
Thermal characteristics
R
DS(ON)
R
DS(ON)
1
DC
1s
100ms
10ms
Note (a)(d)
1ms
100us
-I
D
Drain Current (A)
I
D
Drain Current (A)
10
Limited
10
Limited
1
DC
1s
100ms
Note (a)(d)
10ms
1ms
100us
100m
100m
10m
0.1
NPN @ Single Pulse, T
amb
=25°C
10m
0.1
PNP @ Single Pulse, T
amb
=25°C
1
10
1
10
V
DS
Drain-Source Voltage (V)
-V
DS
Drain-Source Voltage (V)
N-channel Safe Operating Area
100
80
60
40
D=0.2
D=0.5
P-channel Safe Operating Area
2.0
Max Power Dissipation (W)
Thermal Resistance (°C/W)
1.5
Two active die
One active die
1.0
Single Pulse
D=0.05
D=0.1
0.5
20
0
100µ
0.0
0
25
50
75
100
125
150
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Temperature (°C)
Transient Thermal Impedance
Single Pulse
T
amb
=25°C
Derating Curve
Maximum Power (W)
100
10
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Power Dissipation
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ZXMC3F31DN8
Q1 N-channel electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Static
Drain-Source breakdown
voltage
Zero Gate voltage Drain
current
Gate-Body leakage
Gate-Source threshold
voltage
Static Drain-Source
( )
on-state resistance
*
Forward
( ) (†)
Transconductance
*
Dynamic
(†)
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
fs
Min.
30
Typ.
Max.
Unit
V
Conditions
I
D
= 250μA, V
GS
=0V
V
DS
=30V, V
GS
=0V
V
GS
=±
20V, V
DS
=0V
I
D
= 250μA, V
DS
=V
GS
V
GS
= 10V, I
D
= 7.0A
V
GS
= 4.5, I
D
= 6.0A
V
DS
= 15V, I
D
= 7.0A
0.5
100
1.0
3.0
0.024
0.039
16.5
µA
nA
V
Ω
S
Input capacitance
Output capacitance
Reverse transfer
capacitance
Switching
(‡) (†)
C
iss
C
oss
C
rss
608
132
72
pF
pF
pF
V
DS
= 15V, V
GS
=0V
f=1MHz
Turn-on-delay time
Rise time
Turn-off delay time
Fall time
Total Gate charge
Gate-Source charge
Gate-Drain charge
Source–Drain diode
Diode forward voltage
Reverse recovery time
( )
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
2.9
3.3
16
8
12.9
2.5
2.52
ns
ns
ns
ns
nC
nC
nC
V
DS
= 15V, V
GS
= 10V
I
D
= 7A
V
DD
= 15V, V
GS
=10V
I
D
= 1A
R
G
≅
6.0Ω,
*
V
SD
t
rr
Q
rr
(‡)
0.82
12
4.8
1.2
V
ns
nC
I
S
= 1.7A,V
GS
=0V
I
S
= 2.2A,di/dt=100A/μs
(‡)
Reverse recovery charge
NOTES:
(*) Measured under pulsed conditions. Pulse width
≤
300μs; duty cycle
≤
2%.
(†)Switching characteristics are independent of operating junction temperature.
(‡)For design aid only, not subject to production testing
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ZXMC3F31DN8
Q1 Typical characteristics
10V
5V
I
D
Drain Current (A)
3.5V
I
D
Drain Current (A)
10
4V
T = 150°C
10V
4V
3.5V
3V
V
GS
10
1
3V
1
2.5V
0.1
T = 25°C
0.1
2V
2.5V
V
GS
0.01
0.1
1.5V
0.01
0.1
V
DS
Drain-Source Voltage (V)
1
10
V
DS
Drain-Source Voltage (V)
1
10
Output Characteristics
1.6
Output Characteristics
Normalised R
DS(on)
and V
GS(th)
10
V
DS
= 10V
V
GS
= 10V
I
D
Drain Current (A)
1.4
1.2
1.0
0.8
0.6
0.4
-50
0
I
D
= 7A
R
DS(on)
T = 150°C
1
V
GS(th)
V
GS
= V
DS
I
D
= 250uA
T = 25°C
0.1
Typical Transfer Characteristics
R
DS(on)
Drain-Source On-Resistance (W)
1000
T = 25°C
V
GS
Gate-Source Voltage (V)
2
3
4
Tj Junction Temperature (°C)
50
100
150
Normalised Curves v Temperature
10
T = 150°C
V
GS
100
3V
I
SD
Reverse Drain Current (A)
2.5V
1
10
3.5V
0.1
T = 25°C
1
0.1
0.01
0.01
4V
4.5V
10V
0.01
Vgs = -3V
0.1
On-Resistance v Drain Current
I
D
Drain Current (A)
1
10
1E-3
0.2
0.4
0.6
0.8
1.0
V
SD
Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
Issue 1 - September 2008
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