Green
A Product Line of
Diodes Incorporated
ZXMN6A11G
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
I
D
V
(BR)DSS
R
DS(on)
120mΩ @ V
GS
= 10V
60V
180mΩ @ V
GS
= 4.5V
3.5A
T
A
= +25°C
4.4A
Features and Benefits
Fast Switching Speed
Low Gate Drive
Low Input Capacitance
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET is designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.
DC-DC Converters
Power Management Functions
Disconnect Switches
Motor Control
Uninterrupted Power Supply
Mechanical Data
Case: SOT223
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram Below
Terminals: Finish - Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
Weight: 0.112 grams (Approximate)
SOT223
D
G
S
Top View
Pin Out - Top
View
Equivalent Circuit
Ordering Information
(Note 4)
Product
ZXMN6A11GTA
Notes:
Marking
See below
Reel size (inches)
7
Tape width (mm)
12
Quantity per reel
1,000
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT223
YWW
ZVN
ZXMN
ZXMN
6A11
4310
ZXMN6A11 = Product Type Marking Code
YWW = Date Code Marking
Y or Y = Last Digit of Year (ex: 5= 2015)
WW or WW = Week Code (01~53)
ZXMN6A11G
Document number: DS33556 Rev. 6 - 2
1 of 8
www.diodes.com
March 2015
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMN6A11G
Maximum Ratings
(@T
A
= +25°C unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
V
GS
= 10V
(Note 6)
T
A
= +70°C (Note 6)
(Note 5)
(Note 7)
(Note 6)
(Note 7)
Symbol
V
DSS
V
GS
I
D
I
DM
I
S
I
SM
Value
60
±20
4.4
3.5
3.1
Units
V
Pulsed Drain Current
V
GS
= 10V
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
15.6
5
15.6
A
Thermal Characteristics
(
@T
A
= +25°C unless otherwise specified.)
Characteristic
Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
Notes:
Symbol
(Note 5)
P
D
(Note 6)
(Note 5)
(Note 6)
(Note 8)
R
θJA
R
θJL
T
J,
T
STG
Value
2.0
16
3.9
31
62.5
32.0
9.8
-55 to +150
Unit
W
mW/°C
°C/W
°C
5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. Same as Note 5, except the device is measured at t ≤ 10 seconds.
7. Same as Note 5, except the device is pulsed with D = 0.02 and pulse width 300μs.
8. Thermal resistance from junction to solder-point (at the end of the drain lead).
ZXMN6A11G
Document number: DS33556 Rev. 6 - 2
2 of 8
www.diodes.com
March 2015
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMN6A11G
Thermal Characteristics
I
D
Drain Current (A)
10
R
DS(on)
Limited
Max Power Dissipation (W)
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
0
20
40
60
80
25mm x 25mm
1oz FR4
1
DC
1s
100ms
T
amb
=25°C
10ms
25mm x 25mm
1oz FR4
1ms
100µs
100m
10m
V
DS
Drain-Source Voltage (V)
1
10
100 120 140 160
Temperature (°C)
Safe Operating Area
Thermal Resistance (°C/W)
60
50
40
D=0.5
Derating Curve
Maximum Power (W)
T
amb
=25°C
25mm x 25mm
1oz FR4
100
Single Pulse
T
amb
=25°C
25mm x 25mm
1oz FR4
30
20
10
0
100µ
1m
10m 100m
1
D=0.2
D=0.1
Single Pulse
D=0.05
10
10
100
1k
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
ZXMN6A11G
Document number: DS33556 Rev. 6 - 2
3 of 8
www.diodes.com
March 2015
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMN6A11G
Electrical Characteristics
(@T
A
= +25°C unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 6)
Forward Transconductance (Notes 6 & 7)
Diode Forward Voltage (Note 6)
Reverse Recovery Time (Note 7)
Reverse Recovery Charge (Note 7)
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Charge (Note 8)
Total Gate Charge (Note 8)
Gate-Source Charge (Note 8)
Gate-Drain Charge (Note 8)
Turn-On Delay Time (Note 8)
Turn-On Rise Time (Note 8)
Turn-Off Delay Time (Note 8)
Turn-Off Fall Time (Note 8)
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
g
fs
V
SD
t
rr
Q
rr
C
iss
C
oss
C
rss
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
60
1.0
Typ
0.105
0.150
4.9
0.85
21.5
20.5
330
35.2
17.1
3.0
5.7
1.25
0.86
1.95
3.5
8.2
4.6
Max
1.0
100
3.0
0.120
0.180
0.95
Unit
V
µA
nA
V
Ω
S
V
ns
nC
Test Condition
I
D
= 250A, V
GS
= 0V
V
DS
= 60V, V
GS
= 0V
V
GS
=
20V,
V
DS
= 0V
I
D
= 250A, V
DS
= V
GS
V
GS
= 10V, I
D
= 2.5A
V
GS
= 4.5V, I
D
= 2A
V
DS
= 15V, I
D
= 2.5A
I
S
= 2.8A, V
GS
= 0V, T
J
= +25°C
I
S
= 2.8A, di/dt = 100A/µs
T
J
= +25°C
V
DS
= 40V, V
GS
= 0V,
f = 1.0MHz
V
GS
= 4.5V
pF
nC
V
GS
= 10V
V
DS
= 15V
I
D
= 2.5A
ns
V
DD
= 30V, I
D
= 2.5A,
R
G
= 6, V
GS
= 10V
6. Measured under pulsed conditions. Pulse width ≤ 300
µ
s; duty cycle ≤ 2%.
7. For design aid only, not subject to production testing.
8. Switching characteristics are independent of operating junction temperature.
ZXMN6A11G
Document number: DS33556 Rev. 6 - 2
4 of 8
www.diodes.com
March 2015
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMN6A11G
Typical Characteristics
T = 25°C
10V 5V
T = 150°C
I
D
Drain Current (A)
I
D
Drain Current (A)
10
4V
3.5V
10
10V 5V
4V
3.5V
1
3V
V
GS
1
3V
2.5V
0.1
0.1
1
10
0.1
V
GS
2V
2.5V
V
DS
Drain-Source Voltage (V)
0.1
V
DS
Drain-Source Voltage (V)
1
10
Output Characteristics
and V
Normalised R
DS(on)
GS(th)
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
Output Characteristics
I
D
Drain Current (A)
V
DS
= 10V
T = 150°C
V
GS
= 10V
I
D
= 2.5A
R
DS(on)
1
T = 25°C
V
GS(th)
V
GS
= V
DS
I
D
= 250uA
0.1
2
V
GS
Gate-Source Voltage (V)
3
4
5
0
50
100
150
Tj Junction Temperature (°C)
Typical Transfer Characteristics
R
DS(on)
Drain-Source On-Resistance )
(
1
3V
3.5V
4V
4.5V
V
GS
Normalised Curves v Temperature
I
SD
Reverse Drain Current (A)
10
5V
10V
1
T = 150°C
0.1
T = 25°C
T = 25°C
0.1
0.4
0.6
0.8
1.0
V
SD
Source-Drain Voltage (V)
1.2
I
D
Drain Current (A)
1
10
On-Resistance v Drain Current
Source-Drain Diode Forward Voltage
ZXMN6A11G
Document number: DS33556 Rev. 6 - 2
5 of 8
www.diodes.com
March 2015
© Diodes Incorporated
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