ZXTN619MA
50V NPN LOW SATURATION TRANSISTOR
Features
BV
CEO
> 50V
I
C
= 4A Continuous Collector Current
Low Saturation Voltage (100mV Max @1A)
R
SAT
= 68mΩ for a Low Equivalent On-Resistance
h
FE
Specified up to 6A for High Current Gain Hold Up
Low Profile 0.6mm High Package for Thin Applications
R
JA
Efficient, 60% Lower than SOT23
4mm
2
Footprint, 50% Smaller than SOT23
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
An Automotive-Compliant Part is Available Under Separate
Datasheet (ZXTN619MAQ)
Mechanical Data
Case: U-DFN2020-3
Nominal Package Height: 0.6mm
Case Material: Molded Plastic. “Green” Molding Compound. UL
Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu, Solderable per MIL-STD-202,
Method 208
e4
Weight: 0.01 grams (Approximate)
Applications
MOSFET Gate Driving
DC-DC Converters
Charging Circuits
Motor Control
Power Switches
U-DFN2020-3 (Type B)
C
B
Top View
Bottom View
E
Device Symbol
Bottom View
Pin-Out
Ordering Information
(Note 4)
Part Number
ZXTN619MATA
Notes:
Marking
SC
Reel Size (inches)
7
Tape Width (mm)
8
Quantity Per Reel
3,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
SC
SC = Product Type Marking code
Top View
ZXTN619MA
Document number: DS31892 Rev. 8 - 2
1 of 7
www.diodes.com
March 2019
© Diodes Incorporated
ZXTN619MA
Absolute Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
(Note 5)
(Note 6)
Symbol
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
Limit
100
50
7
6
4
4.3
1
Unit
V
A
Thermal Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
(Note 5)
P
D
(Note 6)
(Note 5)
(Note 6)
(Note 7)
R
JA
R
JL
T
J,
T
STG
Symbol
Value
1.5
12
2.45
19.6
83
51
16.8
-55 to +150
Unit
W
mW/°
C
°
C/W
°
C
ESD Ratings
(Note 8)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
5. For a device mounted with the exposed collector pad on 31mm x 31mm (10cm
2
) 1oz copper that is on a single sided 1.6mm FR-4 PCB; device is
measured under still air conditions whilst operating in a steady-state. The entire exposed collector pad is attached to the heatsink.
6. Same as Note 5, except the device is measured at t ≤ 5s.
7. Thermal resistance from junction to solder-point (on the exposed collector pad).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXTN619MA
Document number: DS31892 Rev. 8 - 2
2 of 7
www.diodes.com
March 2019
© Diodes Incorporated
ZXTN619MA
Thermal Characteristics and Derating Information
Max Power Dissipation (W)
2.0
10cm
Single
1oz Cu
o
T
A
=25 C
2
I
C
Collector Current (A)
10
V
CE(SAT)
Limited
1.5
1
DC
1s
100ms
10ms
1ms
100
s
Single Pulse, T
A
=25 C
o
1.0
0.1
0.5
0.01
0.1
1
10
100
0.0
0
25
50
75
100
o
125
150
V
CE
Collector-Emitter Voltage (V)
Temperature ( C)
Safe Operating Area
Thermal Resistance ( C/W)
10cm
Single
1oz Cu
2
Derating Curve
Thermal Resistance ( C/W)
225
200
175
150
125
100
75
50
25
0
0.1
1
2oz copper
1oz copper
80
60
o
D=0.5
40
20
D=0.2
Single Pulse
D=0.05
D=0.1
0
µ
100μ 1m
10m 100m
1
10
100
1k
o
10
Pulse Width (s)
Board Cu Area (cm )
2
100
Transient Thermal Impedance
3.5
Thermal Resistance v Board Area
P
D
Dissipation (W)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
T
A
=25 C
T
J Max
=150 C
Continuous
o
o
2oz copper
1oz copper
1
10
Board Cu Area (cm )
2
100
Power Dissipation v Board Area
ZXTN619MA
Document number: DS31892 Rev. 8 - 2
3 of 7
www.diodes.com
March 2019
© Diodes Incorporated
ZXTN619MA
Electrical Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Cutoff Current
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
I
CES
Min
100
50
7
—
—
—
200
300
200
100
—
—
—
—
—
—
—
—
—
—
100
—
—
Typ
190
65
8.2
—
—
—
400
450
400
225
40
10
70
145
150
225
270
0.94
1.00
12
165
170
750
Max
—
—
—
100
20
100
—
—
—
—
—
20
100
200
220
300
320
1.00
1.07
20
—
—
—
Unit
V
V
V
nA
nA
nA
Test Condition
I
C
= 100µA
I
C
= 10mA
I
E
= 100µA
V
CB
= 80V
V
EB
= 6V
V
CES
= 40V
I
C
= 10mA, V
CE
= 2V
I
C
= 200mA, V
CE
= 2V
I
C
= 1A, V
CE
= 2V
I
C
= 2A, V
CE
= 2V
I
C
= 6A, V
CE
= 2V
I
C
= 0.1A, I
B
= 10mA
I
C
= 1A, I
B
= 50mA
I
C
= 1A, I
B
= 10mA
I
C
= 2A, I
B
= 50mA
I
C
= 3A, I
B
= 100mA
I
C
= 4A, I
B
= 200mA
I
C
= 4A, V
CE
= 2V
I
C
= 4A, I
B
= 200mA
V
CB
= 10V, f = 1MHz
V
CE
= 10V, I
C
= 50mA,
f = 100MHz
V
CC
= 10V, I
C
= 1A
I
B1
= -I
B2
= 10mA
Static Forward Current Transfer Ratio (Note 9)
h
FE
—
Collector-Emitter Saturation Voltage (Note 9)
V
CE(SAT)
mV
Base-Emitter Turn-On Voltage (Note 9)
Base-Emitter Saturation Voltage (Note 9)
Output Capacitance
Transition Frequency
Turn-On Time
Turn-Off Time
Note:
V
BE(ON)
V
BE(SAT)
C
OBO
f
T
t
ON
t
OFF
V
V
pF
MHz
ns
ns
9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
ZXTN619MA
Document number: DS31892 Rev. 8 - 2
4 of 7
www.diodes.com
March 2019
© Diodes Incorporated
ZXTN619MA
Typical Electrical Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
0.25
T
A
=25 C
o
I
C
/I
B
=50
0.20
V
CE(SAT)
(V)
V
CE(SAT)
(V)
100m
I
C
/I
B
=100
0.15
0.10
0.05
0.00
1m
100 C
25 C
-55 C
o
o
o
10m
I
C
/I
B
=50
I
C
/I
B
=10
1m
1m
10m
100m
1
10
10m
100m
1
10
I
C
Collector Current (A)
I
C
Collector Current (A)
V
CE(SAT)
v I
C
630
1.2
V
CE
=2V
100 C
o
V
CE(SAT)
v I
C
1.0
I
C
/I
B
=50
540
450
1.0
0.8
0.6
0.4
0.2
0.0
1m
10m
100m
1
-55 C
o
Typical Gain (h
FE
)
Normalised Gain
0.8
V
BE(SAT)
(V)
25 C
o
360
270
180
90
0
10
-55 C
o
0.6
25 C
100 C
o
o
0.4
1m
10m
100m
1
10
I
C
Collector Current (A)
I
C
Collector Current (A)
h
FE
v I
C
1.0
V
CE
=2V
V
BE(SAT)
v I
C
0.8
V
BE(ON)
(V)
-55 C
o
0.6
25 C
o
0.4
1m
10m
100 C
o
100m
1
10
I
C
Collector Current (A)
V
BE(ON)
v I
C
ZXTN619MA
Document number: DS31892 Rev. 8 - 2
5 of 7
www.diodes.com
March 2019
© Diodes Incorporated
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