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DRDNB16W-7

Description
Rated power: 200mW Collector current Ic: 600mA Collector-emitter breakdown voltage Vce: 50V Transistor type: NPN - Pre-biased Trans Digital BJT NPN 50V 600mA 6-Pin SOT-363 T/R
CategoryDiscrete semiconductor    Digital transistor   
File Size248KB,9 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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DRDNB16W-7 Overview

Rated power: 200mW Collector current Ic: 600mA Collector-emitter breakdown voltage Vce: 50V Transistor type: NPN - Pre-biased Trans Digital BJT NPN 50V 600mA 6-Pin SOT-363 T/R

DRDNB16W-7 Parametric

Parameter NameAttribute value
rated power200mW
Collector current Ic600mA
Collector-emitter breakdown voltage Vce50V
Transistor typeNPN - Pre-biased
DRD (xxxx) W
COMPLEX ARRAY FOR RELAY DRIVERS
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Features
Epitaxial Planar Die Construction
One Transistor and One Switching Diode in One Package
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
A
SOT-363
Dim
A
B C
Min
0.10
1.15
2.00
0.30
1.80
0.90
0.25
0.10
Max
0.30
1.35
2.20
0.40
2.20
0.10
1.00
0.40
0.25
Mechanical Data
Case: SOT-363
Case Material: Molded Plastic. "Green" Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 8
Ordering Information: See Page 8
Weight: 0.008 grams (approximate)
H
K
M
B
C
D
F
H
J
K
L
M
α
0.65 Nominal
J
D
F
L
All Dimensions in mm
P/N
DRDNB16W
DRDPB16W
DRDNB26W
DRDPB26W
R1 (NOM) R2 (NOM)
1K
10K
1K
10K
220
4.7K
220
4.7K
DRDN010W/
DRDN005W
DRDP006W
R2
R1
R1
R2
DRDNB16W/
DRDNB26W
DRDPB16W/
DRDPB26W
Maximum Ratings, Total Device
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient Air (Note 3)
Operating and Storage Temperature Range
@T
A
= 25°C unless otherwise specified
Symbol
P
D
R
θ
JA
T
J
, T
STG
Value
200
625
-55 to +150
Unit
mW
°C/W
°C
Maximum Ratings, DRDN010W NPN Transistor
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Note 3)
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
45
18
5
1000
Unit
V
V
V
mA
Maximum Ratings, DRDN005W NPN Transistor
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current – Continuous (Note 3)
Notes:
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
80
80
4.0
500
Unit
V
V
V
mA
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on page 9 or our website at http://www.diodes.com/datasheets/ap02001.pdf.
DS30573 Rev. 10 - 2
1 of 9
www.diodes.com
DRD (xxxx) W
© Diodes Incorporated
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