DMP2200UDW
Dual P-CHANNEL ENHANCEMENT MODE MOSFET
Summary
V
(BR)DSS
-20V
R
DS(on)
max
260m @V
GS
= -4.5V
500m @V
GS
= -2.5V
1000m @V
GS
= -1.8V
I
D
max
-0.9 A
Features
•
•
•
•
•
•
•
Low R
DS(ON)
– Minimizes Conduction Losses
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
ADVANCE INFORMATION
Description
This MOSFET is designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Mechanical Data
•
•
•
•
•
•
Case: SOT363
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram
Terminals: Finish - Matte Tin Annealed over Alloy 42 Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.006 grams (Approximate)
Applications
•
•
Battery Disconnect Switch
Load Switch for Power Management Functions
SOT363
D1
D2
D
2
G
1
S
1
G1
G2
S
2
G
2
D
1
ESD PROTECTED
Gate Protection
Diode
S1
Gate Protection
Diode
S2
Top View
Q1 P-CHANNEAL
Q2 P-CHANNEAL
Top View
Pin out
Ordering Information
(Note 4)
Part Number
DMP2200UDW-7
DMP2200UDW-13
Notes:
Case
SOT363
SOT363
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
SOT363
P22 = Marking Code
YM = Date Code Marking
Y or Y= Year (ex: B = 2014)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2014
B
Jan
1
Feb
2
2015
C
Mar
3
Apr
4
2016
D
May
5
Jun
6
2017
E
Jul
7
2018
F
Aug
8
Sep
9
2019
G
Oct
O
Nov
N
2020
H
Dec
D
DMP2200UDW
Document number: DS37689 Rev. 1 - 2
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© Diodes Incorporated
DMP2200UDW
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6)
T
A
= +25°
C
C
T
A
= +85°
Symbol
V
DSS
V
GSS
I
D
Value
-20
±8
-0.9
-0.7
Units
V
V
A
ADVANCE INFORMATION
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Steady
State
Steady
State
Symbol
P
D
Value
0.45
0.6
275
Units
W
W
R
θ
JA
208
R
θ
JC
T
J,
T
STG
72
-55 to +150
°
C/W
°
C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
D(ON)
t
D(OFF)
t
r
t
f
Min
-20
-0.4
Typ
180
240
320
-0.8
184
26.4
18.5
221
2.1
0.4
0.5
9.8
24.4
88
45
Max
-1
±
10
-1.2
260
500
1,000
-1.2
Unit
V
µA
µA
V
m
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
Test Condition
V
GS
= 0V, I
D
= 250µA
V
DS
= -16V, V
GS
= 0V
V
GS
=
±
8V, V
DS
= 0V
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -4.5V, I
D
= -0.88A
V
GS
= -2.5V, I
D
= -0.71A
V
GS
= -1.8V, I
D
= -0.20A
V
GS
= 0V, I
S
= -0.48A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-Off Delay Time
Turn-On Rise Time
Turn-Off Fall Time
Notes:
V
DS
= -10V, V
GS
= 0V
f = 1.0MHz
V
DS
= V
GS
= 0V,f = 1.0MHz
V
GS
= -4.5V, V
DS
= -10V,
I
D
= -1.7A
V
DD
= -10V, I
D
= -1.5A,
V
GS
= -4.5V, R
GEN
= 1
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMP2200UDW
Document number: DS37689 Rev. 1 - 2
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February 2015
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DMP2200UDW
5.0
V
GS
= -8.0V
5
V
DS
= -5.0V
T
A
= -55°
C
T
A
= 25°
C
T
A
= 125°
C
4.0
I
D
, DRAIN CURRENT (A)
V
GS
= -3.0V
I
D
, DRAIN CURRENT (A)
V
GS
= -4.5V
4
T
A
= 85°
C
T
A
= 150°
C
3.0
V
GS
= -2.0V
3
ADVANCE INFORMATION
2.0
V
GS
= -1.8V
V
GS
= -1.5V
2
1.0
V
GS
= -1.2V
1
0.0
0
4
1
2
3
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
5
0
0
0.5
1.5
2
2.5
3
1
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
I
D
= -0.88A
3.5
R
D S(ON )
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
0.3
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
0.28
0.26
0.24
0.22
0.2
V
GS
= -4.5V
V
GS
= -2.5V
0.6
0.55
0.5
0.45
0.4
0.35
0.3
0.25
0.2
0.15
0.1
0
1
2
3
4
5
6
7
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristics
V
GS
= -2.5V
I
D
= -0.71A
I
D
= -0.71A
0.18
0.16
0
1
2
3
4
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
V
GS
= -4.5V
T
A
= 150°
C
5
8
0.34
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
0.32
0.3
0.28
0.26
0.24
0.22
0.2
0.18
0.16
0.14
0.12
0
1
T
A
= -55°
C
T
A
= 25°
C
T
A
= 85°
C
T
A
= 125°
C
1.5
1.4
R
DS(ON)
, DRA IN-S OURCE
O N-RESI STA NCE (NORMALIZED)
1.3
1.2
1.1
1
0.9
0.8
0.7
-50
V
GS
= -4.5V
I
D
= -0.88A
2
3
4
I
D
, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
5
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 6 On-Resistance Variation with Temperature
DMP2200UDW
Document number: DS37689 Rev. 1 - 2
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DMP2200UDW
0.36
R
DS(ON)
, DRAI N-SO URCE O N-RES ISTANCE (
Ω
)
V
GS(th)
, GATE THRESHOLD VOLTAGE (V)
1
V
GS
= -2.5V
I
D
= -0.71A
0.34
0.32
0.3
0.28
0.26
0.24
0.22
0.2
0.18
0.16
0.14
0.12
-50
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 7 On-Resistance Variation with Temperature
-25
V
GS
= -4.5V
I
D
= -0.88A
0.9
0.8
0.7
0.6
0.5
0.4
0.3
-50
I
D
= -250µA
I
D
= -1mA
ADVANCE INFORMATION
-25
25
50
75 100 125
0
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 8 Gate Threshold Variation vs.
Junction Temperature
150
5
1000
4
I
S
, SOURCE CURRENT (A)
T
A
= 150°
C
C
T
, JUNCTION CAPACITANCE (pF)
C
iss
3
T
A
= 125°
C
T
A
= 25°
C
100
2
T
A
= 85°
C
1
T
A
= 55°
C
C
oss
f = 1MHz
C
rss
0
0
0.3
0.6
0.9
1.2
1.5
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
10
0
5
10
15
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
R
DS(on)
Limited
20
8
V
GS
GATE THRESHOLD VOLTAGE (V)
7
6
5
4
3
2
1
0
0
1
2
3
Q
g
, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
4
V
DS
= -10V
I
D
= -1.7A
10
P
W
= 100µs
-I
D
, DRAIN CURRENT (A)
1
DC
P
W
= 10s
P
W
= 1s
P
W
= 100ms
P
W
= 10ms
0.1
T
A
= 25°C
T
J (m ax )
= 150°C
P
W
= 1ms
0.01
0.1
V
GS
= 4.5V
Single Pulse
DUT on 1 * MRP Board
10
1
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
100
DMP2200UDW
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DMP2200UDW
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.9
D = 0.7
D = 0.5
D = 0.3
ADVANCE INFORMATION
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
R
θ
JA
(t) = r(t) * R
JA
θ
R
θJA
= 271°
C/W
Duty Cycle, D = t1/ t2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
B C
H
K
M
J
D
F
L
SOT363
Dim Min Max Typ
A
0.10 0.30 0.25
B
1.15 1.35 1.30
C
2.00 2.20 2.10
D
0.65 Typ
F
0.40 0.45 0.425
H
1.80 2.20 2.15
J
0
0.10 0.05
K
0.90 1.00 1.00
L
0.25 0.40 0.30
M
0.10 0.22 0.11
0°
8°
-
α
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
C2
C2
Z
G
C1
Y
X
Dimensions Value (in mm)
Z
2.5
G
1.3
X
0.42
Y
0.6
C1
1.9
C2
0.65
DMP2200UDW
Document number: DS37689 Rev. 1 - 2
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February 2015
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