A Product Line of
Diodes Incorporated
ZXTP25060BFH
60V PNP MEDIUM POWER TRANSISTOR IN SOT23
Features and Benefits
•
•
•
•
•
•
•
•
•
•
•
BV
CEO
> -60V Breakdown Voltage
100V forward blocking voltage
I
C
= -3A Continuous Collector Current,
I
CM
= -9A Peak Pulse Current,
Low saturation voltage, V
CE(sat)
< -85mV @ -1A
R
CE(sat)
= 58 mΩ for a low equivalent on-resistance
1.25W power dissipation using SuperSOT package
Complementary part number ZXTN25060BFH
Lead Free, RoHS Compliant (Note 1)
Halogen and Antimony Free, Green Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
•
•
•
•
•
•
Case: SOT23
Case material: molded Plastic. “Green” molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
Weight: 0.008 grams (Approximate)
Applications
•
•
•
MOSFET drivers
Power switches
Motor control
SOT23
C
C
B
B
E
E
Top View
Device Symbol
Top View
Pin-Out
Ordering Information
(Note 3)
Product
ZXTP25060BFHTA
Notes:
Case
SOT23
Reel size (inches)
7
Tape width (mm)
8mm
Quantity per reel
3000
1. No purposefully added lead.
2. Diodes Inc.’s “Green” Policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com/
Marking Information
028
028 = Product Type Marking Code
ZXTP25060BFH
Document number: DS33374 Rev. 4 - 2
1 of 7
www.diodes.com
January 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTP25060BFH
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage (forward blocking)
Collector-Emitter Voltage
Emitter-Collector Voltage (reverse blocking)
Emitter-Base Voltage
Continuous Collector Current
Peak pulse Current
Symbol
V
CBO
V
CEX
V
CEO
V
ECO
V
EBO
I
C
I
CM
Value
-100
-100
-60
-7
-7
-3
-9
Unit
V
V
V
V
V
A
A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
(Note 4)
(Note 5)
P
D
(Note 6)
(Note 7)
(Note 4)
Thermal Resistance, Junction to Ambient
(Note 5)
(Note 6)
(Note 7)
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
Notes:
Symbol
Value
0.73
5.84
1.05
8.4
1.25
9.6
1.81
14.5
171
Unit
Power Dissipation
Linear derating factor
W
R
θ
JA
119
100
69
°C/W
(Note 8)
R
θ
JL
T
J,
T
STG
74.95
-55 to +150
°C/W
°C
4. For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
5. Same as note (4), except the device is surface mounted on 25mm x 25mm with 2 oz copper.
6. Same as note (4), except the device is surface mounted on 50mm x 50mm with 2 oz copper.
7. Same as note (6), except the device is measured at t<5secs.
8. Thermal resistance from junction to solder-point (at the end of the collector lead).
ZXTP25060BFH
Document number: DS33374 Rev. 4 - 2
2 of 7
www.diodes.com
January 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTP25060BFH
Thermal Characteristics
1oz
ZXTP25060BFH
Document number: DS33374 Rev. 4 - 2
3 of 7
www.diodes.com
January 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTP25060BFH
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (forward blocking)
Collector-Emitter Breakdown Voltage (base open) (Note 9)
Emitter- Collector Breakdown Voltage
(Reverse blocking) (Note 9)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector emitter Cutoff Current
Emitter Cutoff Current
Static Forward Current Transfer Ratio (Note 9)
Base-Emitter Saturation Voltage (Note 9)
Base-Emitter turn-on Voltage (Note 9)
Symbol
BV
CBO
BV
CEX
BV
CEO
BV
ECO
BV
EBO
I
CBO
I
CEX
I
EBO
h
FE
V
BE(sat)
V
BE(on)
Min
-100
-100
-60
-7
-7
-
-
Typ
-120
-120
-80
-8.6
-8.1
< -1
-
-
< -1
200
150
60
-940
-830
-45
-100
-70
-175
250
17.6
26.5
291
Max
-
-
-
-
-
-50
-20
-100
-50
300
-
-
-1040
-930
-55
-135
-85
-235
-
30
-
-
Unit
V
V
V
V
V
nA
µA
nA
nA
-
mV
mV
Test Condition
I
C
= -100 µA
I
C
= -100 µA,
R
BE
< 1kΩ or -0.25V < V
BE
< 1V
I
C
= -10mA
I
E
= -100µA
I
E
= -100µA
V
CB
= -80V
V
CB
= -80V, T
A
= 100°C
V
CE
= -80V,
R
BE
< 1kΩ or -0.25V < V
BE
< 1V
V
EB
= -6V
I
C
= -10mA, V
CE
= -2V
I
C
= -1A, V
CE
= -2V
I
C
= -3A, V
CE
= -2V
I
C
= -3A, I
B
= -300mA
I
C
= -3A, V
CE
= -2V
I
C
= -0.5A, I
B
= -50mA
I
C
= -0.5A, I
B
= -10mA
I
C
= -1A, I
B
= -100mA
I
C
= -3A, I
B
= -300mA
I
C
= -100mA, V
CE
= -5V,
f = 100MHz
V
CB
= -10V, f = 1MHz
V
CC
= -10V, I
C
= -500mA,
I
B1
= I
B2
= -50mA
-
-
100
75
30
-
-
-
Collector-Emitter Saturation Voltage (Note 9)
V
CE(sat)
-
-
-
mV
Transition Frequency
Collector Output Capacitance (Note 9)
Turn-on time
Turn-off time
Notes:
f
T
C
OBO
t
(on)
t
(off)
-
-
-
-
MHz
pF
ns
ns
9. Measured under pulsed conditions. Pulse width
≤
300
µs. Duty cycle
≤
2%
ZXTP25060BFH
Document number: DS33374 Rev. 4 - 2
4 of 7
www.diodes.com
January 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTP25060BFH
Typical Characteristics
1
Tamb=25°C
I
C
/I
B
=100
0.4
I
C
/I
B
=10
0.3
- V
CE(SAT)
(V)
100m
I
C
/I
B
=50
I
C
/I
B
=20
- V
CE(SAT)
(V)
0.2
150°C
100°C
25°C
-55°C
0.1
10m
1m
10m
100m
I
C
/I
B
=10
1
10
0.0
10m
100m
1
- I
C
Collector Current (A)
- I
C
Collector Current (A)
V
CE(SAT)
v I
C
1.6
V
CE
=2V
150°C
100°C
V
CE(SAT)
v I
C
360
320
280
240
200
160
120
80
40
0
10
1.0
I
C
/I
B
=10
-55°C
25°C
- V
BE(SAT)
(V)
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1m
Typical Gain (h
FE
)
Normalised Gain
1.4
0.8
25°C
0.6
100°C
150°C
-55°C
0.4
1m
10m
100m
1
10m
100m
1
- I
C
Collector Current (A)
- I
C
Collector Current (A)
h
FE
v I
C
V
BE(SAT)
v I
C
1.2
V
CE
=2V
1.0
-55°C
25°C
- V
BE(ON)
(V)
0.8
0.6
150°C
0.4
1m
10m
100m
100°C
1
10
- I
C
Collector Current (A)
V
BE(ON)
v I
C
ZXTP25060BFH
Document number: DS33374 Rev. 4 - 2
5 of 7
www.diodes.com
January 2012
© Diodes Incorporated
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