DMP4025SFG
40V P-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI3333-8
Product Summary
BV
DSS
-40V
R
DS(ON)
Max
25m @ V
GS
= -10V
45m @ V
GS
= -4.5V
I
D
Max
T
A
= +25°
C
(Note 6)
- 7.2A
- 5.4A
Features
Low R
DS(ON)
– Minimizes Conduction Losses
Fast Switching Speed – Minimizes Switching Losses
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
An Automotive-Compliant Part is Available Under Separate
Datasheet (DMP4025SFGQ)
Description
This MOSFET has been designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.
Mechanical Data
Case: PowerDI 3333-8
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram Below
Terminals: Finish - Matte Tin Annealed over Copper Lead Frame.
Solderable per MIL-STD-202, Method 208
Weight: 0.0172 grams (Approximate)
®
Applications
Motor Control
Backlighting
DC-DC Converters
Printer Equipment
PowerDI3333-8
Top View
Bottom View
Device Symbol
Ordering Information
(Note 4)
Part Number
DMP4025SFG-7
DMP4025SFG-13
Notes:
Marking
P40
P40
Reel Size (inches)
7
13
Tape Width (mm)
8
8
Quantity per Reel
2,000
3,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
YYWW
P40
P40 = Product Marking Code
YYWW = Date Code Marking
YY = Year (ex: 18 = 2018)
WW = Week (01 to 53)
PowerDI is a registered trademark of Diodes Incorporated.
DMP4025SFG
Document Number: DS36107 Rev: 3 - 2
1 of 8
www.diodes.com
October 2018
© Diodes Incorporated
DMP4025SFG
Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
= -10V
Maximum Body Diode Forward Current
Pulsed Drain Current
Pulsed Source Current
(Note 6)
T
A
= +70° (Note 6)
C
(Note 5)
(Note 6)
(Note 7)
(Note 7)
Symbol
V
DSS
V
GSS
I
D
I
S
I
DM
I
SM
Value
-40
20
-7.2
-5.77
-4.65
-7.2
-80
-80
Unit
V
A
Thermal Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Notes:
Symbol
(Note 5)
(Note 6)
(Note 5)
(Note 6)
P
D
R
θJA
T
J,
T
STG
Value
0.81
1.95
155
64
-55 to +150
Unit
W
°
C/W
°
C
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. For a device surface mounted on 25mm x 25mm FR-4 PCB with 2oz copper, in still air conditions.
7. Same as note (6), except the device is pulsed with D= 0.02 and pulse width 300µs.
DMP4025SFG
Document Number: DS36107 Rev: 3 - 2
2 of 8
www.diodes.com
October 2018
© Diodes Incorporated
DMP4025SFG
Thermal Characteristics
100
P
(PK)
, PEAK TRANSIENT POIWER
(W)
POWER
(W)
90
80
70
60
50
40
30
20
10
0
0.0001 0.001 0.01 0.1
1
10
100 1,000
t1, PULSE DURATION TIME (sec)
Figure 1 Single Pulse Maximum Power Dissipation
Single Pulse
R
JA
= 136
C/W
R
JA(t)
= r
(t)
* R
JA
T
J
- T
A
= P * R
JA(t)
1
D=0.5
r(t), TRANSIENT THERMAL RESISTANCE
D=0.3
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
D=Single Pulse
0.001
0.000001 0.00001
0.0001
R
θJA
(t) = r(t) * R
θJA
R
θJA
= 60℃/W
Duty Cycle, D = t1 / t2
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Figure 2. Transient Thermal Resistance
10
100
1000
D=0.7
D=0.9
DMP4025SFG
Document Number: DS36107 Rev: 3 - 2
3 of 8
www.diodes.com
October 2018
© Diodes Incorporated
DMP4025SFG
Electrical Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 8)
Forward Transconductance (Notes 8 & 9)
Diode Forward Voltage (Note 8)
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (Note 10)
Total Gate Charge (Note 10)
Gate-Source Charge (Note 10)
Gate-Drain Charge (Note 10)
Turn-On Delay Time (Note 10)
Turn-On Rise Time (Note 10)
Turn-Off Delay Time (Note 10)
Turn-Off Fall Time (Note 10)
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
g
fs
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
Min
-40
-0.8
Typ
-1.3
18
30
16.6
-0.7
1643
179
128
6.43
14.0
33.7
5.5
7.3
6.9
14.7
53.7
30.9
Max
-1.0
100
-1.8
25
45
-1.0
Unit
V
µA
nA
V
mΩ
S
V
Test Condition
I
D
= -250µA, V
GS
= 0V
V
DS
= -40V, V
GS
= 0V
V
GS
=
20V,
V
DS
= 0V
I
D
= -250A, V
DS
= V
GS
V
GS
= -10V, I
D
= -3A
V
GS
= -4.5V, I
D
= -3A
V
DS
= -5V, I
D
= -3A
I
S
= -1A, V
GS
= 0V
V
DS
= -20V, V
GS
= 0V
f = 1MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
GS
= -4.5V
V
DS
= -20V
I
D
= -3A
V
GS
= -10V
pF
Ω
nC
ns
V
DD
= -20V, V
GS
= -10V
I
D
= -3A
8. Measured under pulsed conditions. Pulse width
300µs; duty cycle
2%.
9. For design aid only, not subject to production testing.
10. Switching characteristics are independent of operating junction temperatures.
Typical Characteristics
30
25
-I
D
, DRAIN CURRENT (A)
-I
D
, DRAIN CURRENT (A)
30
V
DS
= -5V
T
A
= 85°
C
T
A
= 25°
C
T
A
= -55°
C
25
)
A
(
T
N 20
E
R
R
U
C 15
N
I
A
R
D 10
,
D
I
-
5
0
T
A
= 150°
C
20
T
A
= 125°
C
15
10
5
0
0
0.5
1
1.5
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 3 Typical Output Characteristic
2
0
1
2
3
4
-V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristic
5
DMP4025SFG
Document Number: DS36107 Rev: 3 - 2
4 of 8
www.diodes.com
October 2018
© Diodes Incorporated
DMP4025SFG
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE ()
0.05
0.04
0.03
V
GS
= -4.5V
0.02
V
GS
= -10V
0.01
)
(
E
C
N
A
T
S
I
S
E
R
-
N
O
E
C
R
U
O
S
-
N
I
A
R
D
,
)
N
R
0.04
V
GS
= -10V
0.03
T
A
= 150°
C
T
A
= 125°
C
T
A
= 85°
C
0.02
T
A
= 25°
C
T
A
= -55°
C
0.01
0
O
(
S
D
0
5
10
15
20
25
-I
D
, DRAIN-SOURCE CURRENT (A)
Figure 5 Typical On-Resistance
vs. Drain Current and Gate Voltage
30
0
0
5
10
15
20
25
-I
D
, DRAIN CURRENT (A)
Figure 6 Typical On-Resistance
vs. Drain Current and Temperature
30
1.7
R
DSON
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
0.06
V
GS
= -10V
I
D
= -20A
R
DSON
, DRAIN-SOURCE ON-RESISTANCE (
)
1.5
0.05
1.3
V
GS
= -4.5V
I
D
= -10A
0.04
1.1
0.03
V
GS
= -4.5V
I
D
= -10A
0.9
0.02
V
GS
= -10V
I
D
= -20A
0.7
0.5
-50 -25
0.01
0
-50 -25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (癈 )
(°
C)
Figure 8 On-Resistance Variation with Temperature
20
18
16
)
A
(
T 14
N
E
R 12
R
U
C 10
E
C
R 8
U
O
S 6
,
S
I
-
4
-I
S
, SOURCE CURRENT (A)
2
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE
(°
)
(癈
C)
Figure 7 On-Resistance Variation with Temperature
2.0
-V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
)
V
(
E
G
A
T
L 1.5
O
V
D
L
O
H
S
E 1.0
R
H
T
E
T
A
G
,
)
0.5
H
V
-
T
(
S
G
T
A
= 25°
C
I
D
= -1mA
I
D
= -250µA
0
-50 -25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°
C)
Figure 9 Gate Threshold Variation vs. Ambient Temperature
0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 10 Diode Forward Voltage vs. Current
DMP4025SFG
Document Number: DS36107 Rev: 3 - 2
5 of 8
www.diodes.com
October 2018
© Diodes Incorporated
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