DMN1019UFDE
12V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
ADVANCE INFORMATION
V
(BR)DSS
R
DS(ON) max
10mΩ @ V
GS
= 4.5V
12mΩ @ V
GS
= 2.5V
14mΩ @ V
GS
= 1.8V
18mΩ @ V
GS
= 1.5V
41mΩ @ V
GS
= 1.2V
Package
I
D max
T
A
= +25°C
11A
10
9A
8A
5A
Features
0.6mm profile – ideal for low profile applications
PCB footprint of 4mm2
Low Gate Threshold Voltage
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
12V
U-DFN2020-6
Type E
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
Case: U-DFN2020-6 Type E
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
e4
Weight: 0.008 grams (approximate)
Applications
Load Switching
Battery Management Application
Power Management Functions
U-DFN2020-6
Type E
Pin1
D
G
Gate Protection
Diode
ESD PROTECTED
Bottom View
Pin Out
Bottom View
S
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMN1019UFDE-7
Notes:
Marking
N7
Reel size (inches)
7
Quantity per reel
3,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
N7
N7 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2011
Y
Jan
1
Feb
2
2012
Z
Mar
3
Apr
4
2013
A
May
5
Jun
6
YM
2014
B
Jul
7
2015
C
Aug
8
Sep
9
2016
D
Oct
O
Nov
N
2017
E
Dec
D
October 2013
© Diodes Incorporated
DMN1019UFDE
D
atasheet number: DS35561 Rev. 5 - 2
1 of 7
www.diodes.com
DMN1019UFDE
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
ADVANCE INFORMATION
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) V
GS
= 4.5V
Maximum Continuous Body Diode Current
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Steady
State
t<5s
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
D
I
S
I
DM
Value
12
±8
11
9
14
11
3.0
100
Units
V
V
A
A
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
T
A
= +25°C
T
A
= +70°C
Steady state
t<5s
T
A
= +25°C
T
A
= +70°C
Steady state
t<5s
Symbol
P
D
R
JA
P
D
R
JA
R
Jc
T
J,
T
STG
Value
0.69
0.44
182
118
2.17
1.38
58
38
10
-55 to +150
Units
W
°C/W
W
°C/W
°C
100
P
(PK)
, PEAK TRANSIENT POIWER (W)
90
80
70
60
50
40
30
20
10
0
0.0001 0.001 0.01
0.1
1
10
100 1,000
t1, PULSE DURATION TIME (sec)
Fig. 1 Single Pulse Maximum Power Dissipation
Single Pulse
R
JA
= 178
C/W
R
JA(t)
= r
(t)
* R
JA
T
J
- T
A
= P * R
JA(t)
DUT on MRP
100
R
DS(on)
Limited
P
W
= 10µs
I
D
, DRAIN CURRENT (A)
10
DC
1
P
W
= 10s
P
W
= 1s
P
W
= 100ms
P
W
= 10ms
P
W
= 1ms
P
W
= 100µs
0.1
0.01
0.01
T
J(max)
= 150°C
T
A
= 25°C
Single Pulse
DUT on 1 * MRP Board
V
GS
= 8V
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 2 SOA, Safe Operation Area
100
DMN1019UFDE
D
atasheet number: DS35561 Rev. 5 - 2
2 of 7
www.diodes.com
October 2013
© Diodes Incorporated
DMN1019UFDE
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.9
D = 0.7
D = 0.5
D = 0.3
ADVANCE INFORMATION
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
R
JA(t)
= r
(t)
* R
JA
R
JA
= 178
C/W
Duty Cycle, D = t1/t2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Fig. 3 Transient Thermal Resistance
10
100
1,000
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
Min
12
—
—
0.35
Typ
—
—
—
—
7
8
10
14
28
28
0.8
2425
396
375
1.1
50.6
27.3
3.4
5.2
7.6
22.2
57.6
16.8
Max
—
1
±2
0.8
10
12
14
18
41
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
µA
µA
V
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 12V, V
GS
= 0V
V
GS
= ±8V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 4.5V, I
D
= 9.7A
V
GS
= 2.5V, I
D
= 9A
V
GS
= 1.8V, I
D
= 8.1A
V
GS
= 1.5V, I
D
= 4.5A
V
GS
= 1.2V, I
D
= 2.4A
V
DS
= 4V, I
D
= 9.7A
V
GS
= 0V, I
S
= 10A
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DS
= 4V, I
D
= 10A
Static Drain-Source On-Resistance
R
DS (ON)
—
mΩ
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= 8V)
Total Gate Charge (V
GS
= 4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
—
—
—
—
—
—
—
—
—
—
—
—
—
—
S
V
pF
Ω
nC
ns
V
DD
= 4V, V
GS
= 10V, I
D
= 10A
R
G
= 1Ω, R
L
= 0.4Ω
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMN1019UFDE
D
atasheet number: DS35561 Rev. 5 - 2
3 of 7
www.diodes.com
October 2013
© Diodes Incorporated
DMN1019UFDE
30
25
30
25
I
D
, DRAIN CURRENT (A)
V
DS
= 5.0V
ADVANCE INFORMATION
I
D
, DRAIN CURRENT (A)
20
20
15
15
T
A
= 150°C
10
10
T
A
= 125°C
5
0
5
0
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
0
0.5
1.0
1.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 4 Typical Output Characteristic
2.0
0
0.4
0.8
1.2
1.6
V
GS
, GATE-SOURCE VOLTAGE
Fig. 5 Typical Transfer Characteristics
2.0
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.016
0.020
0.012
0.016
V
GS
= 4.5V
0.012
I
D
= 4.5A
I
D
= 9.7A
0.008
V
GS
= 2.5V
V
GS
= 1.8V
0.008
0.004
0.004
0
0
5
10
15
20
25
I
D
, DRAIN-SOURCE CURRENT
Fig. 6 Typical On-Resistance vs.
Drain Current and Gate Voltage
30
0
0
2
3
4
5
6
7
8
V
GS
, GATE VOLTAGE (V)
Fig. 7 Typical On-Resistance vs. Gate Voltage
1
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.020
V
GS
= 4.5V
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
50
V
GS
= 10V
I
D
= 10A
V
GS
= 4.5V
I
D
= 5A
0.016
0.012
T
A
= 150°C
T
A
= 125°C
0.008
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
0.004
0
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
0
5
10
15
20
25
I
D
, DRAIN CURRENT
Fig. 8 Typical On-Resistance vs.
Drain Current and Temperature
30
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Fig. 9 On-Resistance Variation with Temperature
DMN1019UFDE
D
atasheet number: DS35561 Rev. 5 - 2
4 of 7
www.diodes.com
October 2013
© Diodes Incorporated
DMN1019UFDE
0.020
V
GS(th)
, GATE THRESHOLD VOLTAGE (V)
1.2
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
ADVANCE INFORMATION
0.016
1.0
0.8
0.6
I
D
= 1mA
0.012
V
GS
= 4.5V
I
D
= 5A
0.008
V
GS
= 10 V
I
D
= 10A
0.4
I
D
= 250µA
0.004
0.2
0
-50
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Fig. 10 On-Resistance Variation with Temperature
-25
0
25
50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Fig. 11 Gate Threshold Variation vs. Ambient Temperature
30
10,000
f = 1MHz
20
C
T
, JUNCTION CAPACITANCE (pF)
25
I
S
, SOURCE CURRENT (V)
C
iss
15
T
A
= 25°C
1,000
C
oss
C
rss
10
5
0
0
0.2
0.4
0.6
0.8
1.0
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig.12 Diode Forward Voltage vs. Current
1.2
100
0
2
4
6
8
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 13 Typical Junction Capacitance
12
8
V
GS
GATE THRESHOLD VOLTAGE (V)
6
V
DS
= -4V
I
D
= -10A
4
2
0
0
5
10 15 20 25 30 35 40 45 50
Q
g
, TOTAL GATE CHARGE (nC)
Fig. 14 Gate Charge
DMN1019UFDE
D
atasheet number: DS35561 Rev. 5 - 2
5 of 7
www.diodes.com
October 2013
© Diodes Incorporated
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