DMN2990UFA
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
max
0.99Ω @ V
GS
= 4.5V
I
D
max
T
A
= +25°C
510mA
470mA
380mA
330mA
Features and Benefits
Low Package Profile, 0.4mm Maximum Package height
0.48mm package footprint, 16 times smaller than SOT23
Low On-Resistance
Very low Gate Threshold Voltage, 1.0V max
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
2
NEW PRODUCT
20V
1.2Ω @ V
GS
= 2.5V
1.8Ω @ V
GS
= 1.8V
2.4Ω @ V
GS
= 1.5V
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
Case: X2-DFN0806-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper leadframe.
Solderable per MIL-STD-202, Method 208
e4
Weight: 0.001 grams (approximate)
Drain
Applications
General Purpose Interfacing Switch
Power Management Functions
Analog Switch
Body
Diode
Gate
D
ESD PROTECTED
S
G
Gate
Protection
Diode
Source
Bottom View
Top View
Package Pin Configuration
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMN2990UFA-7B
Notes:
Case
X2-DFN0806-3
Packaging
10K/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
DMN2990UFA-7B
NW
Top View
Bar Denotes Gate
and Source Side
NW = Product Type Marking Code
DMN2990UFA
Document number: DS35765 Rev. 3 - 2
1 of 6
www.diodes.com
June 2013
© Diodes Incorporated
DMN2990UFA
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Steady
State
t<10s
Steady
State
t<10s
Pulsed Drain Current (Note 6)
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= 70°C
T
A
= +25°C
T
A
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
D
I
D
I
D
I
DM
Value
20
±8
510
410
610
490
380
300
450
360
800
Units
V
V
mA
mA
mA
mA
mA
NEW PRODUCT
Continuous Drain Current (Note 5) V
GS
= 4.5V
Continuous Drain Current (Note 5) V
GS
= 1.8V
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Steady state
Steady state
t<10s
Symbol
P
D
R
JA
T
J,
T
STG
Value
400
310
220
-55 to +150
Units
mW
°C/W
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
@T
C
= +25°C
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
Min
20
—
—
—
0.4
—
—
Static Drain-Source On-Resistance
R
DS(ON)
—
—
—
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Typ
—
—
—
—
—
0.60
0.75
0.90
1.2
2.0
—
0.6
27.6
4.0
2.8
0.5
0.07
0.07
4.0
3.3
19.0
6.4
Max
—
100
50
±100
1.0
0.99
1.2
1.8
2.4
—
—
1.0
55.2
8.0
5.6
—
—
—
—
—
—
—
Unit
V
nA
nA
V
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 16V, V
GS
= 0V
V
DS
= 5V, V
GS
= 0V
V
GS
= ±5V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 4.5V, I
D
= 100mA
V
GS
= 2.5V, I
D
= 50mA
Ω
V
GS
= 1.8V, I
D
= 20mA
V
GS
= 1.5V, I
D
= 10mA
V
GS
= 1.2V, I
D
= 1mA
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
180
-
—
—
—
—
—
—
—
—
—
—
mS
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
DS
= 10V, I
D
= 400mA
V
GS
= 0V, I
S
= 150mA
V
DS
= 16V, V
GS
= 0V,
f = 1.0MHz
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 250mA
V
DD
= 10V, V
GS
= 4.5V,
R
L
= 47Ω, R
G
= 10Ω,
I
D
= 200mA
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMN2990UFA
Document number: DS35765 Rev. 3 - 2
2 of 6
www.diodes.com
June 2013
© Diodes Incorporated
DMN2990UFA
0.8
I
D
(A) @ V
GS
= 4.5V
I
D
(A) @ V
GS
= 3.0V
I
D
(A) @ V
GS
=4.0V
I
D
(A) @ V
GS
= 2.5V
I
D
(A) @ V
GS
= 2.0V
I
D
(A) @ V
GS
= 1.5V
0.8
V
DS
= 5.0V
Ave V
GS
(V) @ -55°C
Ave V
GS
(V) @ 25°C
Ave V
GS
(V) @ 85°C
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT(A)
0.6
0.6
Ave V
GS
(V) @ 125°C
NEW PRODUCT
0.4
0.4
Ave V
GS
(V) @ 150°C
0.2
0.2
I
D
(A) @ V
GS
= 1.2V
0.0
0
0
4
0.5
1
1.5
2
2.5
3
3.5
V
DS
, DRAIN-SOURCE VOLTAGE (A)
Fig. 1 Typical Output Characteristics
0
0.5
1
1.5
2
2.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
3
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
1.2
R
DS(ON)
Ave @ V
GS
= 1.8V
1.2
V
GS
= 4.5V
1
1
Ave R
DS(ON)
(R) @ 150°C
0.8
0.8
Ave R
DS(ON)
(R) @ 125°C
0.6
R
DS(ON)
Ave @ V
GS
= 4.5V
0.6
Ave R
DS(ON)
(R) @ 85°C
Ave R
DS(ON)
(R) @ 25°C
0.4
0.4
Ave R
DS(ON)
(R) @ -55°C
0.2
0.2
0
0
0.2
0
0.2
0.4
0.6
I
D
, DRAIN-SOURCE CURRENT
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
0.8
0.4
0.6
0.8
1
I
D
DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance vs. Drain Current and Temperature
1.2
R
DS(ON)
Ave
@ V
GS
= 4.5V, I
D
= 300mA
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
1.6
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(Normalized)
1
R
DS(ON)
@ V
GS
= 4.5V, I
D
= 300mA
1.4
0.8
1.2
R
DS(ON)
Ave
@ V
GS
= 2.5V, I
D
= 150mA
0.6
R
DS(ON)
@ V
GS
= 2.5V, I
D
= 150mA
1
0.4
0.8
0.2
0.6
-50
0
-
25
0
25
50
75
100 125 150
T
J
, JUNCTION TEMPERATURE(
C)
Fig. 5 On-Resistance Variation with Temperature
-50
T
J
, JUNCTION TEMPERATURE(
C)
Fig. 6 On-Resistance Variation with Temperature
-
25
0
25
50
75
100 125 150
DMN2990UFA
Document number: DS35765 Rev. 3 - 2
3 of 6
www.diodes.com
June 2013
© Diodes Incorporated
DMN2990UFA
1.2
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
1
V
SD
(V) @ V
GS
= 0V, T
A
= 25°C
1
V
TH
(V) @ I
D
= 1mA
0.8
V
TH
(V) @ I
D
= 250µA
I
S
, SOURCE CURRENT (A)
0.8
NEW PRODUCT
0.6
0.6
0.4
0.4
0.2
0.2
0
-50
0
-25
0
25
50
75
100
125
150
0
T
J
, JUNCTION TEMPERATURE(
C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
50
f = 1MHz
0.2
0.4
0.6
0.8
1
V
SD
, SOURCE- DRAIN VOLTAGE (V)
Fig. 8 Diodes Forward Voltage vs. Current
1.2
1000
CT, JUNCTION CAPACITANCE (pF)
40
I
DSS
, LEAKAGE CURRENT (nA)
100
I
DSS
(nA) Ave @ 150°C
30
Ciss Ave (pF)
I
DSS
(nA) Ave @ 125°C
20
10
I
DSS
(nA) Ave @ 85°C
Crss Ave (pF)
10
Coss Ave (pF)
I
DSS
(nA) Ave @ 25°C
0
0
5
10
15
20
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
8
6
8
10
12 14 16 18
20
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
1
2
4
6
4
2
VDS = 10V
0
0
0.4
0.6
0.8
Q
G
- (nC)
Fig. 11 Gate Charge Characteristics
0.2
1
DMN2990UFA
Document number: DS35765 Rev. 3 - 2
4 of 6
www.diodes.com
June 2013
© Diodes Incorporated
DMN2990UFA
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
NEW PRODUCT
A3
A
A1
Seating Plane
D
e
L (2x)
K
E1
b (2x)
E
X2-DFN0806-3
Dim Min
Max Typ
A
0.375 0.40 0.39
A1
0
0.05 0.02
A3
-
-
0.10
b
0.10 0.20 0.15
D
0.55 0.65 0.60
D1
0.35 0.45 0.40
E
0.75 0.85 0.80
E1
0.20 0.30 0.25
e
-
-
0.35
K
-
-
0.20
L
0.20 0.30 0.25
All Dimensions in mm
Pin#1
R0.075
D1
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X1
Y1
Dimensions
Y2
X (2x)
Y (2x)
C
X
X1
X2
Y
Y1
Y2
Value
(in mm)
0.350
0.200
0.450
0.550
0.375
0.475
1.000
C
X2
DMN2990UFA
Document number: DS35765 Rev. 3 - 2
5 of 6
www.diodes.com
June 2013
© Diodes Incorporated
京公网安备 11010802033920号
EEWORLD
