DMN3200U
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
•
Low On-Resistance
90mΩ @ V
GS
= 4.5V
110mΩ @ V
GS
= 2.5V
200mΩ @ V
GS
= 1.5V
•
•
•
•
•
•
•
Mechanical Data
•
•
•
•
•
•
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish
Matte Tin Annealed over Copper
Leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (Approximate)
NEW PRODUC
Low Gate Threshold Voltage
Low Input Capacitance
ESD Protected Gate
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
SOT23
D
D
G
ESD PROTECTED TO 3kV
Gate Protection
Diode
G
S
S
Top View
Top View
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMN3200U-7
Notes:
Case
SOT23
Packaging
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
32N = Marking Code
YM = Date Code Marking
Y or
Y
= Year (ex: D = 2016)
M = Month (ex: 9 = September)
32N
Date Code Key
Year
Code
Month
Code
2007
U
Jan
1
Feb
2
~
~
Mar
3
2016
D
Apr
4
YM
2017
E
May
5
2018
F
Jun
6
Jul
7
2019
G
Aug
8
2020
H
Sep
9
Oct
O
2021
I
Nov
N
2022
J
Dec
D
DMN3200U
Document number: DS31188 Rev. 7 - 2
1 of 6
www.diodes.com
May 2016
© Diodes Incorporated
DMN3200U
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 5)
Pulsed Drain Current (Note 5)
Symbol
V
DSS
V
GSS
I
D
I
DM
Value
30
±8
2.2
9
Units
V
V
A
A
NEW PRODUC
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P
D
R
θJA
T
J
, T
STG
Value
650
192
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 6)
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
t
D(ON)
t
R
t
D(OFF)
t
F
Min
30
0.45
Typ
62
70
150
5
290
66
35
40.2
43.1
471
104
Max
1
±5
1.0
90
110
200
0.9
Unit
V
µA
µA
V
mΩ
S
V
pF
pF
pF
ns
ns
ns
ns
Test Condition
V
GS
= 0V, I
D
= 250µA
V
DS
= 30V, V
GS
= 0V
V
GS
= ±8V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 4.5V, I
D
= 2.2A
V
GS
= 2.5V, I
D
= 2A
V
GS
= 1.5V, I
D
= 0.67A
V
DS
= 5V, I
D
= 2.2A
V
GS
= 0V, I
S
= 1A
V
DS
= 10V, V
GS
= 0V
f = 1.0MHz
V
DD
= 10V, I
D
= 2A, V
GEN
= 4.5V,
R
L
= 5Ω, R
GEN
= 6Ω
5. Device mounted on FR-4 PCB, on minimum recommended pad layout on 2oz. Copper pads.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
DMN3200U
Document number: DS31188 Rev. 7 - 2
2 of 6
www.diodes.com
May 2016
© Diodes Incorporated
DMN3200U
20
V
GS
4.5V
V
GS
= 4.5V
V
GS
= 4.0V
V
GS
= 4.0V
V
GS
= 3.0V
V
GS
= 3.0V
V
GS
= 2.5V
V
GS
= 2.5V
V
GS
= 2.0V
V
GS
= 2.0V
10
9
)
A
(
T
N
E
R
R
U
C
N
I
A
R
D
,
D
I
8
7
6
5
4
3
2
V
GS
=
1.2V
V
GS
=
1.2V
V
GS
=
1.0V
V
GS
=
1.0V
V
DS
= 5V
Pulsed
16
I
D
, DRAIN CURRENT (A)
12
NEW PRODUC
8
V
GS
= 1.5V
V
GS
= 1.5V
4
I
D
, DRAIN CURRENT (A)
T
A
= 150°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
1
5
0
0
1
2
3
4
V
DS
,
DRAIN-SOURCE VOLTAGE (V)
DRAIN -SOURCE VOLTAGE (V)
V
DS
,
Figure
Typical Output Characteristics
Fig. 1
1 Typical Output Characteristics
0
0.5
1.5
2
2.5
V
GS
, GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
1
3
1
R
DS(ON)
, STATIC DRAIN-SOURCE
ON-RESISTANCE (
Ω
)
1.8
1.6
V
GS
= 1.5V
1.4
0.1
V
GS
= 2.5V
1.2
V
GS
= 4.5V
1.0
0.8
0.01
0.01
0.6
0.1
1
10
I
D
, DRAIN-SOURCE CURRENT (A)
Fig. 3 On-Resistance vs. Drain Current & Gate Voltage
1.0
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
)
V
(
E
G
A
T
L
O
V
D
L
O
H
S
E
R
H
T
E
T
A
G
,
)
H
V
0.8
I
D
= 250µA
C, CAPACITANCE (pF)
C
iss
0.6
0.4
C
oss
0.2
T
(
S
G
C
rss
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 5 Gate Threshold Variation vs. Ambient Temperature
0
-50
0
5
10
15
20
25
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 6 Typical Total Capacitance
30
DMN3200U
Document number: DS31188 Rev. 7 - 2
3 of 6
www.diodes.com
May 2016
© Diodes Incorporated
DMN3200U
10
100
R
DS(on)
Limited
NEW PRODUC
1
)
A
(
T
N
E
R
0.1
R
U
C
E
C
R 0.01
U
O
S
,
S
I
0.001
I
S
, SOURCE CURRENT (A)
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
I
D
, DRAIN CURRENT (A)
10
1
DC
P
W
= 10s
P
W
= 1s
P
W
= 100ms
P
W
= 10ms
P
W
= 1ms
T
J(ma x)
= 150°C
P
W
= 100µs
T
A
= 25°C
V
GS
= 4.5V
Single Pulse
DUT on 1 * MRP Board
T
A
= 25°C
T
A
= -55°C
0.1
0.0001
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
,SOURCE-DRAIN VOLTAGE (V)
Fig. 7 Reverse Drain Current vs. Source-Drain Voltage
0
0.01
0.1
1
10
V
DS
,
DRAIN-SOURCE VOLTAGE (V)
V
DS
VOLTAGE (V)
Figure
8 SOA, Safe
Operation Area
8 SOA, Safe
Operation Area
Fig.
100
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.9
D = 0.02
0.01
D = 0.01
D = 0.005
R
θ
JA
(t) = r(t) * R
θ
JA
R
θJA
= 188°C/W
Duty Cycle, D = t1/ t2
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIMES (sec)
t1, PULSE DURATION TIME (sec)
Figure 15 Transient Thermal Resistance
Fig. 9 Transient Thermal Resistance
10
100
1,000
Single Pulse
0.001
0.00001
DMN3200U
Document number: DS31188 Rev. 7 - 2
4 of 6
www.diodes.com
May 2016
© Diodes Incorporated
DMN3200U
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
H
All 7°
GAUGE PLANE
0.25
NEW PRODUC
K1
K
J
a
A
M
L
L1
C
B
D
F
G
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.890 1.00 0.975
K1
0.903 1.10 1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085 0.150 0.110
a
0°
8°
--
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
Y
Dimensions
C
X
X1
Y
Y1
Value (in mm)
2.0
0.8
1.35
0.9
Y1
C
2.9
X
X1
DMN3200U
Document number: DS31188 Rev. 7 - 2
5 of 6
www.diodes.com
May 2016
© Diodes Incorporated
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