DMN3007LSS
SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
max
7mΩ @ V
GS
= 10V
30V
10mΩ @ V
GS
= 4.5V
13.5A
I
D
max
T
A
= +25°C
16A
Features and Benefits
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This MOSFET has been designed to minimize the on-state
resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish
Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (approximate)
Applications
Backlighting
Power Management Functions
DC-DC Converters
SO-8
S
S
S
Top View
D
D
D
D
Top View
Internal Schematic
D
G
S
Equivalent circuit
G
Ordering Information
Part Number
DMN3007LSS-13
Notes:
(Note 4)
Case
SO-8
Packaging
2500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
8
5
8
5
N3007LS
YY WW
1
4
1
N3007LS
YY WW
4
= Manufacturer’s Marking
N3007LS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Chengdu A/T Site
Shanghai A/T Site
DMN3007LSS
Document number: DS31460 Rev. 6 - 2
1 of 5
www.diodes.com
October 2013
© Diodes Incorporated
DMN3007LSS
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 5)
Pulsed Drain Current (Note 6)
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
V
DSS
V
GSS
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
I
DM
Value
30
20
16
13
64
Units
V
V
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P
D
R
JA
T
J,
T
STG
Value
2.5
50
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
(@T
A
= +25°C, unless otherwise specified.)
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
g
fs
V
SD
C
iss
C
oss
C
rss
R
G
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Min
30
1.3
Typ
5
7.9
16.4
0.67
2714
436
380
0.7
31.2
64.2
7.1
17.1
10.3
14.8
85.1
43.6
Max
1
100
2.1
7
10
1.2
nC
Unit
V
μA
nA
V
mΩ
S
V
pF
pF
pF
Ω
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 30V, V
GS
= 0V
V
GS
=
20V,
V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 15A
V
GS
= 4.5V, I
D
= 13A
V
DS
= 10V, I
D
= 15A
V
GS
= 0V, I
S
= 2.3A
V
DS
= 15V, V
GS
= 0V
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
V
DS
= 15V, V
GS
= 4.5V, I
D
= 16A
V
DS
= 15V, V
GS
= 10V, I
D
= 16A
V
DS
= 15V, V
GS
= 10V, I
D
= 16A
V
DS
= 15V, V
GS
= 10V, I
D
= 16A
V
DS
= 15V, V
GS
= 10V,
I
D
= 1A, R
G
= 6.0Ω
Forward Transconductance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
SWITCHING CHARACTERISTICS (Note 8)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Notes:
ns
5.Device mounted on 2 oz. Copper pads on FR-4 PCB, with R
JA
= +50°C
6.Pulse width
10μS,
Duty Cycle
1%.
7.Short duration pulse test used to minimize self-heating effect.
8.Guaranteed by design. Not subject to product testing.
DMN3007LSS
Document number: DS31460 Rev. 6 - 2
2 of 5
www.diodes.com
October 2013
© Diodes Incorporated
DMN3007LSS
30
V
GS
= 10V
30
28
26
24
I
D
, DRAIN CURRENT (A)
22
20
18
16
14
12
10
8
6
4
2
0
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
25
I
D
, DRAIN CURRENT (A)
V
GS
= 4.5V
V
GS
= 4.0V
V
GS
= 3.0V
20
15
10
V
GS
= 2.8V
5
0
V
GS
= 2.5V
0
0.5
1 1.5 2 2.5 3 3.5 4 4.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
5
1
2
3
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
4
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (m
)
12
11
10
9
8
7
6
5
4
3
2
1
0
0
5
10
15
20
25
I
D
, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
30
V
GS
= 10V
V
GS
= 4.5V
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (m
)
14
V
GS
= 4.5V
12
T
A
= 150°C
T
A
= 125°C
10
T
A
= 85°C
8
T
A
= 25°C
6
T
A
= -55°C
4
0
5
10
15
20
I
D
, DRAIN CURRENT (A)
25
30
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
2.4
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
2.0
1.6
R
DSON
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.4
V
GS
= 10V
I
D
= 10A
I
D
= 1mA
1.6
I
D
= 250µA
1.2
V
GS
= 4.5V
I
D
= 5A
1.2
1.0
0.8
0.8
0.4
0
-50 -25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 6 Gate Threshold Variation vs. Ambient Temperature
0.6
-50
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
DMN3007LSS
Document number: DS31460 Rev. 6 - 2
3 of 5
www.diodes.com
October 2013
© Diodes Incorporated
DMN3007LSS
30
27
24
I
S
, SOURCE CURRENT (A)
21
18
15
12
9
6
3
0
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 7 Diode Forward Voltage vs. Current
T
A
= 25°C
10,000
C, CAPACITANCE (pF)
C
iss
1,000
C
oss
C
rss
100
0
5
10
15
20
25
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 8 Typical Total Capacitance
30
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
R
JA
(t) = r(t) * R
JA
R
JA
= 88°C/W
P(pk)
D = 0.02
0.01
D = 0.01
D = 0.005
t
1
D = Single Pulse
t
2
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/t
2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1,000
10,000
t
1
, PULSE DURATION TIME (s)
Fig. 9 Transient Thermal Response
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version
SO-8
Dim
Min
Max
A
—
1.75
A1
0.10
0.20
A2
1.30
1.50
A3
0.15
0.25
b
0.3
0.5
D
4.85
4.95
E
5.90
6.10
E1
3.85
3.95
e
1.27 Typ
h
—
0.35
L
0.62
0.82
0
8
All Dimensions in mm
E1 E
A1
L
0.254
Gauge Plane
Seating Plane
Detail ‘A’
h
A2 A A3
e
D
b
7
°~
9
°
45
°
Detail ‘A’
DMN3007LSS
Document number: DS31460 Rev. 6 - 2
4 of 5
www.diodes.com
October 2013
© Diodes Incorporated
DMN3007LSS
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
C1
C2
Y
Dimensions
X
Y
C1
C2
Value (in mm)
0.60
1.55
5.4
1.27
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
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application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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website, harmless against all damages.
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
www.diodes.com
DMN3007LSS
Document number: DS31460 Rev. 6 - 2
5 of 5
www.diodes.com
October 2013
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