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GBU806

Description
Reverse peak voltage: 600V Average rectified current (Io): 8A Forward voltage drop (Vf): 1V @ 4A
CategoryDiscrete semiconductor    Rectifier bridge   
File Size58KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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GBU806 Overview

Reverse peak voltage: 600V Average rectified current (Io): 8A Forward voltage drop (Vf): 1V @ 4A

GBU806 Parametric

Parameter NameAttribute value
Reverse peak voltage600V
Average rectified current (Io)8A
Forward voltage drop (Vf)1V @ 4A
GBU8005 - GBU810
8.0A GLASS PASSIVATED BRIDGE RECTIFIER
Features
·
·
·
·
·
·
·
Glass Passivated Die Construction
High Case Dielectric Strength of 1500VRMS
Low Reverse Leakage Current
Surge Overload Rating to 200A Peak
Ideal for Printed Circuit Board Applications
UL Listed Under Recognized Component
Index, File Number E94661
Lead Free Finish, RoHS Compliant (Note 4)
L
D
E
F
J
G
P
H
N
A
B
K
C
M
GBU
Dim
A
B
C
D
E
F
G
H
J
K
L
M
N
P
Min
21.8
3.5
7.4
1.65
2.25
1.95
1.02
4.83
17.5
18.3
3.30
0.46
0.76
Max
22.3
4.1
7.9
2.16
2.75
2.35
1.27
5.33
18.0
18.8
3.56
0.56
1.0
Mechanical Data
·
·
·
·
·
·
·
·
·
·
Case: GBU
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish
¾
Tin. Solderable per MIL-STD-202,
Method 208
e
3
Polarity: Marked on Body
Mounting: Through Hole for #6 Screw
Mounting Torque: 5.0 Inch-pounds Maximum
Ordering Information: See Last Page
Marking: Date Code and Type Number
Weight: 6.6 grams (approximate)
-
~
~
+
3.2 X 45°
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single phase, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Rectified Current (Note 1) @ T
C
= 100°C
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
Forward Voltage (per element)
Peak Reverse Current
at Rated DC Blocking Voltage
I
2
t Rating for Fusing (t < 8.3ms) (Note 2)
Typical Total Capacitance per Element (Note 3)
Typical Thermal Resistance Junction to Case (Note 1)
Operating and Storage Temperature Range
Notes:
1.
2.
3.
4.
@ T
A
= 25°C unless otherwise specified
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
(AV)
I
FSM
V
FM
I
R
I
2
t
C
T
R
qJC
T
j,
T
STG
GBU
8005
50
35
GBU
801
100
70
GBU
802
200
140
GBU
804
400
280
8.0
200
1.0
5.0
500
166
130
2.2
-55 to +150
GBU
806
600
420
GBU
808
800
560
GBU
810
1000
700
Unit
V
V
A
A
V
mA
A
2
s
pF
°C/W
°C
@ I
F
= 4.0A
@ T
C
= 25°C
@ T
C
= 125°C
Unit mounted on 50 x 50 x 1.6mm copper plate heatsink.
Non-repetitive, for t > 1.0ms and < 8.3ms.
Per element, measured at 1.0MHz and applied reverse voltage of 4.0V DC.
RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see
EU Directive Annex Notes 5 and 7.
DS21227 Rev. 7 - 2
1 of 3
www.diodes.com
GBU8005 - GBU810
ã
Diodes Incorporated

GBU806 Related Products

GBU806 GBU810 GBU8005
Description Reverse peak voltage: 600V Average rectified current (Io): 8A Forward voltage drop (Vf): 1V @ 4A Reverse peak voltage: 50V Average rectified current (Io): 8A Forward voltage drop (Vf): 1V @ 4A
Reverse peak voltage 600V - 50V
Average rectified current (Io) 8A - 8A
Forward voltage drop (Vf) 1V @ 4A - 1V @ 4A
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