DMN55D0UT
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Low On-Resistance
Very Low Gate Threshold Voltage
Low Input Capacitance
ESD Protected Gate to 2kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: SOT523
Case Material: Molded Plastic, "Green" Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.002 grams (Approximate)
SOT523
D
D
G
ESD PROTECTED TO 2kV
G
Gate Protection
Diode
S
Top View
S
Top View
Equivalent Circuit
Ordering Information
(Note 5)
Part Number
DMN55D0UT-7
DMN55D0UTQ-7
Notes:
Qualification
Commercial
Automotive
Case
SOT523
SOT523
Packaging
3,000/Tape & Reel
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to https://www.diodes.com/quality/.
5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
NAC
YM
NAC = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: G = 2019)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2007
U
Jan
1
---
---
Feb
2
2015
C
Mar
3
2016
D
Apr
4
2017
E
May
5
Jun
6
2018
F
Jul
7
2019
G
Aug
8
2020
H
Sep
9
2021
I
Oct
O
2022
J
Nov
N
2023
K
Dec
D
DMN55D0UT
Document number: DS31330 Rev. 7 - 2
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May 2019
© Diodes Incorporated
DMN55D0UT
Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 6) Continuous
Pulsed Drain Current (Note 6)
Symbol
V
DSS
V
GSS
I
D
I
DM
Value
50
±12
160
560
Unit
V
V
mA
mA
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P
D
R
θJA
T
J
, T
STG
Value
200
625
-55 to +150
Unit
mW
°
C/W
°
C
Electrical Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
OFF CHARACTERISTICS
(Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
(Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
(Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= 4V)
Total Gate Charge (V
GS
= 8V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
g
FS
V
SD
C
iss
C
oss
C
rss
R
G
Q
G
Q
G
Q
GS
Q
GD
t
D(ON)
t
R
t
D(OFF)
t
F
Min
50
—
—
0.7
—
—
180
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
0.8
3.1
4
—
0.70
25
5
2.1
500
295
636
72
18
6.0
4.4
23.4
11.0
Max
—
1
1.0
5.0
1.0
4
5
—
1.3
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
µA
µA
V
Ω
mS
V
pF
pF
pF
Ω
pC
pC
pC
pC
ns
ns
ns
ns
Test Condition
V
GS
= 0V, I
D
= 250µA
V
DS
= 50V, V
GS
= 0V
V
GS
= ±8V, V
DS
= 0V
V
GS
= ±12V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 4V, I
D
= 100mA
V
GS
= 2.5V, I
D
= 80mA
V
DS
= 10V, I
D
= 100mA, f = 1.0kHz
V
GS
= 0V, I
S
= 100mA
V
DS
= 10V, V
GS
= 0V, f = 1.0MHz
f = 1MHz, V
GS
= 0V, V
DS
= 0V
V
DS
= 10V,
I
D
= 100mA
V
DD
= 10V, V
GS
= 4V,
R
G
= 25Ω, I
D
= 100mA
6. Device mounted on FR-4 PCB, with minimum recommended pad layout.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMN55D0UT
Document number: DS31330 Rev. 7 - 2
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May 2019
© Diodes Incorporated
DMN55D0UT
0.8
0.7
0.6
0.5
V
GS
= 3.0V
V
GS
= 10V
0.5
V
DS
= 10V
0.4
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
V
GS
= 4.5V
0.4
0.3
0.2
0.1
0
0
0.5
1
V
GS
= 1.5V
V
GS
= 1.0V
V
GS
= 2.5V
)
A
(
T
N
E 0.3
R
R
U
C
N 0.2
I
A
R
D
,
D
I
0.1
T
A
= 85°
C
T
A
= 25°
C
T
A
= -55°
C
T
A
= 150°
C
T
A
= 125°
C
0
5
1.5 2 2.5 3 3.5 4 4.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
0
1
2
3
V
GS
, GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
4
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
10
10
T
A
= 150°
C
T
A
= 125°
C
T
A
= 85°
C
V
GS
= 2.5V
V
GS
= 4.0V
)
(
E
C
N
A
T
S
I
S
E
R
-
N
O
E
C
R
U
O
S
-
N
I
A
R
D
,
)
N
R
T
A
= 25°
C
T
A
= -55°
C
1
0.001
O
(
S
D
0.01
0.1
I
D
, DRAIN CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
1
1
0
0.2
0.3
0.4
0.5
I
D
, DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
0.1
2.0
1.8
R
DS(ON)
, DRAIN-TO-SOURCE
RESISTANCE (NORMALIZED)
35
30
C, CAPACITANCE (pF)
V
GS
= 4V
I
D
= 100mA
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
25
20
C
iss
V
GS
= 2.5V
I
D
= 80mA
f = 1MHz
15
10
5
0
0
V
GS
= 0V
C
oss
C
rss
-25
0
25
50
75 100 125 150
T
,
JUNCTION TEMPERATURE (癈
T
J
J
,
JUNCTION TEMPERATURE (°
)
C)
Fig. 5 On-Resistance Variation with Temperature
Fig. 5 On-Resistance Variation with Temperature
5
10
15
20
25
30
35
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 6 Typical Capacitance
40
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DMN55D0UT
1.1
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
)
V
(
E
G
A
T
L
O
V
D
L
O
H
S
E
R
H
T
E
T
A
G
,
)
H
V
1.0
)
A
0.1
(
T
N
E
R
R
U
C 0.01
E
C
R
U
O
S
,
S
0.001
I
I
S
, SOURCE CURRENT (A)
1
0.9
I
D
= 250µA
T
A
= 150°
C
T
A
= 125°
C
T
A
= 85°
C
0.8
0.7
T
A
= 25°
C
T
A
= -55°
C
T
(
S
G
0.6
0.0001
0.1
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°
C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0.5
-50
0.3
0.5
0.7
0.9
1.1
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
8
V
GS
, GATE-SOURCE VOLTAGE (V)
V
GS
GATE THRESHOLD VOLTAGE (V)
6
V
DS
= 10V
I
D
= 0.1A
4
2
0
0
0.1
0.2
0.3
0.4
0.5
0.6
Q
g
, TOTAL GATE CHARGE (nC)
Fig. 9 Gate Charge
0.7
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
D = 0.9
0.1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
R
JA
(t) = r(t) * R
JA
R
JA
= 625°
C/W
P(pk)
0.01
D = 0.005
D = Single Pulse
t
1
t
2
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/t
2
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
t
1
, PULSE DURATION TIME (s)
Fig. 10 Transient Thermal Response
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10
100
DMN55D0UT
Document number: DS31330 Rev. 7 - 2
May 2019
© Diodes Incorporated
DMN55D0UT
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT523
E
E1
e1
D
b
A2
A3
c
A1
e
L
a
SOT523
Dim Min
Max
Typ
A1
0.00
0.10
0.05
A2
0.60 0.80
0.75
A3
0.45
0.65
0.50
b
0.15
0.30
0.22
c
0.10
0.20
0.12
D
1.50
1.70
1.60
E
1.45
1.75
1.60
E1
0.75
0.85
0.80
e
0.50 BSC
e1
0.90
1.10
1.00
L
0.20
0.40
0.33
a
0°
--
8°
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT523
Dimensions
C
X
X1
Y
Y1
Y
X1
X
Y1 C
Value
(in mm)
1.29
0.40
0.70
0.51
1.80
DMN55D0UT
Document number: DS31330 Rev. 7 - 2
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May 2019
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