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DMN1025UFDB-7

Description
Drain-source voltage (Vdss): 12V Continuous drain current (Id) (at 25°C): 8.8A Gate-source threshold voltage: 1V @ 250uA Drain-source on-resistance: 25mΩ @ 5.2A, 4.5V Maximum power dissipation (Ta=25°C): 1.7W Type: Dual N-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size248KB,6 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet Parametric View All

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DMN1025UFDB-7 Overview

Drain-source voltage (Vdss): 12V Continuous drain current (Id) (at 25°C): 8.8A Gate-source threshold voltage: 1V @ 250uA Drain-source on-resistance: 25mΩ @ 5.2A, 4.5V Maximum power dissipation (Ta=25°C): 1.7W Type: Dual N-channel

DMN1025UFDB-7 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)12V
Continuous drain current (Id) at 25°C8.8A
Gate-source threshold voltage1V @ 250uA
Drain-source on-resistance25mΩ @ 5.2A,4.5V
Maximum power dissipation (Ta=25°C)1.7W
typeDual N-channel
DMN1025UFDB
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Device
V
(BR)DSS
12V
R
DS(ON) max
25mΩ @ V
GS
= 4.5V
30mΩ @ V
GS
= 2.5V
38mΩ @ V
GS
= 1.8V
I
D MAX
T
A
= +25°C
6.9A
6.3A
5.5A
Features
Low On-Resistance
Low Input Capacitance
Low Profile, 0.6mm Max Height
ESD protected gate.
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
N-Channel
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
Case: U-DFN2020-6 Type B
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu over Copper leadframe. Solderable per
MIL-STD-202, Method 208
e4
Terminals Connections: See Diagram Below
Weight: 0.0065 grams (approximate)
Applications
Load Switch
Power Management Functions
Portable Power Adaptors
U-DFN2020-6
Type B
S2
D2
D2
D1
G1
S1
Pin1
Bottom View
Gate Protection
Diode
D1
D2
G2
D1
G1
S1
G2
Gate Protection
Diode
ESD PROTECTED
S2
N-CHANNEL MOSFET
N-CHANNEL MOSFET
Internal Schematic
Ordering Information
(Note 4)
Part Number
DMN1025UFDB-7
DMN1025UFDB-13
Notes:
Case
U-DFN2020-6 Type B
U-DFN2020-6 Type B
Packaging
3000/Tape & Reel
10000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/quality/product_compliance_definitions/.
Marking Information
NB = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
NB
Date Code Key
Year
Code
Month
Code
2012
Z
Jan
1
Feb
2
2013
A
Mar
3
Apr
4
YM
2014
B
May
5
2015
C
Jun
6
Jul
7
2016
D
Aug
8
Sep
9
2017
E
Oct
O
Nov
N
2018
F
Dec
D
DMN1025UFDB
Document number: DS36668 Rev. 2 - 2
1 of 6
www.diodes.com
April 2014
© Diodes Incorporated
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