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DMP2035UFDF-7

Description
Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 8.1A Gate-source threshold voltage: 1V @ 250uA Drain-source on-resistance: 29mΩ @ 6.4A, 4.5V Maximum power dissipation (Ta=25°C): 2.03W Type: P channel P channel, 20V, 8.1A
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size453KB,7 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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DMP2035UFDF-7 Overview

Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 8.1A Gate-source threshold voltage: 1V @ 250uA Drain-source on-resistance: 29mΩ @ 6.4A, 4.5V Maximum power dissipation (Ta=25°C): 2.03W Type: P channel P channel, 20V, 8.1A

DMP2035UFDF-7 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)20V
Continuous drain current (Id) at 25°C8.1A
Gate-source threshold voltage1V @ 250uA
Drain-source on-resistance29mΩ @ 6.4A,4.5V
Maximum power dissipation (Ta=25°C)2.03W
typeP channel
DMP2035UFDF
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
Max
29mΩ @ V
GS
= -4.5V
-20V
39mΩ @ V
GS
= -2.5V
-5.9A
I
D
Max
T
A
= +25°C
-6.9A
Features and Benefits
0.6mm Profile – Ideal for Low Profile Applications
PCB Footprint of 4mm
2
Low Gate Threshold Voltage
Low On-Resistance
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
), yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Battery Management Application
Power Management Functions
DC-DC Converters
Mechanical Data
Case: U-DFN2020-6 (Type F)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
e4
Weight: 0.0065 grams (Approximate)
U-DFN2020-6 (Type F)
D
G
ESD PROTECTED
Pin1
Top View
Bottom View
Pin Out
Bottom View
Gate Protection
Diode
S
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMP2035UFDF-7
DMP2035UFDF-13
Notes:
Case
U-DFN2020-6 (Type F)
U-DFN2020-6 (Type F)
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
P8
P8 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: D = 2016)
M = Month (ex: 9 = September)
2019
G
May
5
Jun
6
2020
H
Jul
7
Aug
8
2021
I
Sep
9
2022
J
Oct
O
Nov
N
2023
K
Dec
D
June 2016
© Diodes Incorporated
Date Code Key
Year
Code
Month
Code
2016
D
Jan
1
Feb
2
2017
E
Mar
3
2018
F
Apr
4
YM
DMP2035UFDF
Document number: DS37736 Rev. 1 - 2
1 of 7
www.diodes.com

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Description Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 8.1A Gate-source threshold voltage: 1V @ 250uA Drain-source on-resistance: 29mΩ @ 6.4A, 4.5V Maximum power dissipation (Ta=25°C): 2.03W Type: P channel P channel, 20V, 8.1A MOSFET P-CH 20V 8.1A UDFN2020-6
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