DMN2020LSN
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
•
•
•
•
•
•
•
•
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Up To 2KV
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
•
•
•
•
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Case: SC-59
Case Material - Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 2
Ordering Information: See Page 2
Weight: 0.014 grams (approximate)
NEW PRODUCT
SC-59
Drain
D
Gate
Gate
Protection
Diode
G
Source
S
TOP VIEW
ESD PROTECTED TO 2kV
TOP VIEW
EQUIVALENT CIRCUIT
Pin Out Configuration
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 4)
@T
A
= 25°C unless otherwise specified
Symbol
V
DSS
V
GSS
I
D
I
DM
Value
20
±12
6.9
4.5
30
Units
V
V
A
A
Characteristic
Continuous
T
A
= 25°C
T
A
= 85°C
Steady
State
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient @T
A
= 25°C (Note 3)
Operating and Storage Temperature Range
Notes:
Symbol
P
D
R
θ
JA
T
J
, T
STG
Value
0.61
204
-55 to +150
Units
W
°C
/W
°C
1. No purposefully added lead.
2. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, with minimum recommended pad layout.
4. Repetitive rating, pulse width limited by junction temperature.
DMN2020LSN
Document number: DS31946 Rev. 3 - 2
1 of 6
www.diodes.com
August 2011
© Diodes Incorporated
DMN2020LSN
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
20
-
-
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
1.0
13
18
16
0.7
1149
157
142
1.51
11.6
2.7
3.4
11.67
12.49
35.89
12.33
Max
-
1.0
±10
1.5
20
28
-
1.2
-
-
-
-
-
-
-
-
-
-
-
Unit
V
μA
μA
V
mΩ
S
V
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 20V, V
GS
= 0V
V
GS
= ±12V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 4.5V, I
D
= 9.4A
V
GS
= 2.5V, I
D
= 8.3A
V
DS
= 5V, I
D
= 9.4A
V
GS
= 0V, I
S
= 1.3A
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 9.4A
V
DD
= 10V, V
GS
= 4.5V,
R
GEN
= 6Ω, I
D
= 1A
NEW PRODUCT
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
J
= 25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subject to production testing.
20
V
GS
= 8.0V
V
GS
= 4.5V
20
I
D
, DRAIN CURRENT (A)
V
GS
= 2.5V
V
GS
= 2.0V
I
D
, DRAIN CURRENT (A)
15
V
GS
= 3.0V
15
V
DS
= 10V
10
10
T
A
= 150°C
5
V
GS
= 1.8V
5
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
V
GS
= 1.5V
0
0
0.5
1
1.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
2
0
0
0.5
1
1.5
2
2.5
V
GS
, GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
3
DMN2020LSN
Document number: DS31946 Rev. 3 - 2
2 of 6
www.diodes.com
August 2011
© Diodes Incorporated
DMN2020LSN
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
0.05
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
0.06
0.04
0.03
V
GS
= 4.5V
0.04
V
GS
= 1.8V
NEW PRODUCT
0.03
0.02
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
0.02
V
GS
= 2.5V
V
GS
= 4.5V
0.01
T
A
= -55°C
0.01
0
0
2
0
0
6
8 10 12 14 16 18 20
I
D
, DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
2
4
4
6
8 10 12 14 16 18
I
D
, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
20
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.4
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
1.6
0.04
0.03
1.2
V
GS
= 4.5V
I
D
= 500mA
V
GS
= 2.5V
I
D
= 150mA
1.0
0.02
V
GS
= 2.5V
I
D
= 5A
0.8
0.01
V
GS
= 4.5V
I
D
= 10A
0.6
0.4
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
1.8
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
1.6
I
S
, SOURCE CURRENT (A)
20
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0
-50
I
D
= 250µA
15
T
A
= 25°C
I
D
= 1mA
10
5
0
0.4
0.6
0.8
1
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
DMN2020LSN
Document number: DS31946 Rev. 3 - 2
3 of 6
www.diodes.com
August 2011
© Diodes Incorporated
DMN2020LSN
I
DSS
, DRAIN-SOURCE LEAKAGE CURRENT (nA)
1,800
1,600
1,400
C, CAPACITANCE (pF)
1,200
1,000
800
600
400
C
oss
C
iss
f = 1MHz
10,000
T
A
= 150°C
1,000
T
A
= 125°C
NEW PRODUCT
100
10
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
200
C
rss
0
0
5
10
15
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Capacitance
20
1
0
4
6
8 10 12 14 16 18 20
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Drain-Source Leakage Current
vs. Drain-Source Voltage
2
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.9
R
θJA
(t) = r(t) * R
θ
JA
R
θ
JA
= 205°C/W
P(pk)
D = 0.02
0.01
D = 0.01
D = 0.005
t
1
t
2
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/t
2
D = Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
t
1
, PULSE DURATION TIME (s)
Fig. 11 Transient Thermal Response
10
100
1,000
Ordering Information
Part Number
DMN2020LSN-7
Notes:
(Note 7)
Case
SC-59
Packaging
3000/Tape & Reel
7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
N1A = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)
N1A
Date Code Key
Year
Code
Month
Code
2009
W
Jan
1
Feb
2
2010
X
Mar
3
Apr
4
YM
2011
Y
May
5
Jun
6
2012
Z
Jul
7
2013
A
Aug
8
Sep
9
2014
B
Oct
O
Nov
N
2015
C
Dec
D
August 2011
© Diodes Incorporated
DMN2020LSN
Document number: DS31946 Rev. 3 - 2
4 of 6
www.diodes.com
DMN2020LSN
Package Outline Dimensions
A
B C
G
H
K
M
N
J
D
L
SC-59
Dim
Min
Max
Typ
A
0.35
0.50
0.38
B
1.50
1.70
1.60
C
2.70
3.00
2.80
D
-
-
0.95
G
-
-
1.90
H
2.90
3.10
3.00
J
0.013 0.10
0.05
K
1.00
1.30
1.10
L
0.35
0.55
0.40
M
0.10
0.20
0.15
N
0.70
0.80
0.75
0°
8°
-
α
All Dimensions in mm
NEW PRODUCT
Suggested Pad Layout
Y
Z
C
Dimensions Value (in mm)
Z
3.4
X
0.8
Y
1.0
C
2.4
E
1.35
X
E
DMN2020LSN
Document number: DS31946 Rev. 3 - 2
5 of 6
www.diodes.com
August 2011
© Diodes Incorporated
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