ZXMN3A06DN8
DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
= 30V; R
DS(ON)
= 0.035
DESCRIPTION
; I
D
= 6.2A
This new generation of TRENCH MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
•
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
Low profile SOIC package
SO8
APPLICATIONS
•
DC - DC Converters
•
Power Management Functions
•
Disconnect switches
•
Motor control
ORDERING INFORMATION
DEVICE
ZXMN3A06DN8TA
ZXMN3A06DN8TC
REEL
7
’‘
13’‘
TAPE
WIDTH
12mm
12mm
QUANTITY
PER REEL
500 units
2500 units
PINOUT
DEVICE MARKING
ZXMN
3A06D
Top view
ISSUE 2 - OCTOBER 2002
1
ZXMN3A06DN8
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current (V
GS
=10V; T
A
=25°C)(b)(d)
(V
GS
=10V; T
A
=70°C)(b)(d)
(V
GS
=10V; T
A
=25°C)(a)(d)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode)(c)
Power Dissipation at T
A
=25°C (a)(d)
Linear Derating Factor
Power Dissipation at T
A
=25°C (a)(e)
Linear Derating Factor
Power Dissipation at T
A
=25°C (b)(d)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
V
DSS
V
GS
I
D
LIMIT
30
20
6.2
5.0
4.9
30
3.7
30
1.25
10
1.80
14.5
2.1
17.3
-55 to +150
UNIT
V
V
A
I
DM
I
S
I
SM
P
D
P
D
P
D
T
j
:T
stg
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)(d)
Junction to Ambient (a)(e)
Junction to Ambient (b)(d)
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300µs - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph.
(d) For device with one active die
(e) For device with two active die running at equal power.
SYMBOL
R
θJA
R
θJA
R
θJA
VALUE
100
69
58
UNIT
°C/W
°C/W
°C/W
ISSUE 2 - OCTOBER 2002
2
ZXMN3A06DN8
TYPICAL CHARACTERISTICS
ISSUE 2 - OCTOBER 2002
3
ZXMN3A06DN8
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated).
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
1
0.035
0.050
13.5
S
30
0.5
100
V
A
nA
V
I
D
=250µA, V
GS
=0V
V
DS
=30V, V
GS
=0V
V
GS
=±20V, V
DS
=0V
I =250 A, V
DS
= V
GS
D
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS.
Static Drain-Source On-State Resistance R
DS(on)
(1)
Forward Transconductance (1)(3)
DYNAMIC
(3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2)
(3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
NOTES
(1) Measured under pulsed conditions. Width
≤300µs.
Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
V
GS
=10V, I
D
=9A
V
GS
=4.5V, I
D
=7.4A
V
DS
=15V,I
D
=9A
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
g
Q
gs
Q
gd
V
SD
t
rr
Q
rr
796
137
83.5
pF
pF
pF
V
DS
=25 V, V
GS
=0V,
f=1MHz
3.0
6.4
21.6
9.4
9.2
17.5
2.3
3.1
ns
ns
ns
ns
nC
nC
nC
nC
V
DS
=15V,V
GS
=10V,
I
D
=3.5A
V
DS
=15V,V
GS
=5V,
I
D
=3.5A
V
DD
=15V, I
D
=3.5A
R
G
=6.0 , V
GS
=10V
0.85
17.8
11.6
0.95
V
ns
nC
T
J
=25°C, I
S
=5.1A,
V
GS
=0V
T
J
=25°C, I
F
=3.5A,
di/dt= 100A/µs
ISSUE 2 - OCTOBER 2002
4
ZXMN3A06DN8
TYPICAL CHARACTERISTICS
T = 25°C
10V
4V
T = 150°C
10V
4V
I
D
Drain Current (A)
I
D
Drain Current (A)
10
1
0.1
3V
2.5V
2V
V
GS
1.5V
10
1
3.5V
3V
2.5V
2V
1.5V
0.1
V
GS
1V
0.01
0.1
0.01
0.1
1
10
V
DS
Drain-Source Voltage (V)
1
10
V
DS
Drain-Source Voltage (V)
Output Characteristics
1.6
Output Characteristics
V
GS
= 10V
I
D
= 1.5A
R
DS(on)
Normalised R
DS(on)
and V
GS(th)
I
D
Drain Current (A)
1.4
1.2
1.0
0.8
0.6
0.4
-50
0
10
T = 150°C
T = 25°C
1
V
GS(th)
V
GS
= V
DS
I
D
= 250uA
V
DS
= 10V
0.1
1
2
3
4
50
100
150
V
GS
Gate-Source Voltage (V)
Tj Junction Temperature (°C)
Typical Transfer Characteristics
100
Normalised Curves v Temperature
100
R
DS(on)
Drain-Source On-Resistance
(Ω)
10
1
0.1
0.01
0.1
2V
V
GS
2.5V
3V
4V
10V
I
SD
Reverse Drain Current (A)
T = 25°C
T = 150°C
10
T = 25°C
1
1
10
0.1
0.2
On-Resistance v Drain Current
I
D
Drain Current (A)
V
SD
Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4
0.6
0.8
1.0
1.2
1.4
ISSUE 2 - OCTOBER 2002
5
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