DMC4015SSD
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device
V
(BR)DSS
40V
R
DS(ON)
15mΩ @ V
GS
= 10V
20mΩ @ V
GS
= 4.5V
29mΩ @ V
GS
= -10V
45mΩ @ V
GS
= -4.5V
Features and Benefits
I
D
T
A
= +25°C
12.2A
10.6A
-8.8A
-7.1A
Low Input Capacitance
Low On-Resistance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
ADVANCE INFORMATION
NEW PRODUCT
Q1
Q2
-40V
Description
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(ON)
) yet maintain superior switching performance,
which makes it ideal for high-efficiency power management
applications.
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish—Matte Tin Annealed over Copper Leadframe
Solderable per MIL-STD-202, Method 208
e3
Weight: 0.074 grams (Approximate)
Applications
DC-DC Converters
Power Management Functions
Backlighting
SO-8
D1
D1
D1
D2
D2
D2
S1
Pin1
G1
S2
G2
Top View
Top View
Pin Configuration
G1
S1
Q N-Channel MOSFET
G2
S2
Q2 P-Channel MOSFET
Ordering Information
(Note 4)
Part Number
DMC4015SSD-13
Notes:
Case
SO-8
Packaging
2500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, see http://www.diodes.com/products/packages.html.
Marking Information
8
5
8
5
C4015SD
YY
WW
C4015SD
YY
WW
= Manufacturer’s Marking
C4015SD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 18 = 2018)
WW = Week (01 - 53)
1
4
1
4
DMC4015SSD
Document number: DS37348 Rev. 4 - 2
1 of 9
www.diodes.com
June 2018
© Diodes Incorporated
DMC4015SSD
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
V
DSS
V
GSS
Steady
State
t<10s
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Maximum Body Diode Forward Current (Note 6)
Pulsed Source Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current (Note 7) L = 0.1mH
Avalanche Energy (Note 7) L = 0.1mH
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
I
D
I
D
I
DM
I
S
I
SM
I
AS
E
AS
ADVANCE INFORMATION
NEW PRODUCT
Drain-Source Voltage
Gate-Source Voltage
Value_Q1
40
±20
8.6
6.8
12.2
9.8
80
2.5
80
27
37
Value_Q2
-40
±20
-6.2
-4.9
-8.8
-7.1
-50
-2.2
-50
-25
32
Units
V
V
A
A
A
A
A
A
mJ
Continuous Drain Current (Note 6) V
GS
= 10V
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
T
A
= +25°C
T
A
= +70°C
Steady State
t<10s
T
A
= +25°C
T
A
= +70°C
Steady State
t<10s
Symbol
P
D
R
ϴJA
P
D
R
ϴJA
R
ϴJC
T
J,
T
STG
Value
1.2
0.9
106
45
1.7
1.1
76
37
12
-55 to +150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics N-Channel Q1
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
V
SD
C
iss
C
oss
C
rss
R
G
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Min
40
1
Typ
0.7
1810
135
112
1.7
19
40
5.5
6.3
5.1
5.7
23
6.3
12.2
5.4
Max
1
100
3
15
20
1.0
nS
nC
I
S
= 3A, dI/dt = 100A/μs
I
S
= 3A, dI/dt = 100A/μs
June 2018
© Diodes Incorporated
Unit
V
µA
nA
V
mΩ
V
Test Condition
V
GS
= 0V, I
D
= 250µA
V
DS
= 40V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 3A
V
GS
= 4.5V, I
D
= 3A
V
GS
= 0V, I
S
= 1A
pF
Ω
V
DS
= 20V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
nC
V
DS
= 20V, I
D
= 3A
nS
V
DD
= 20V, I
D
= 3A
V
GS
= 10V, R
G
= 3Ω,
DMC4015SSD
Document number: DS37348 Rev. 4 - 2
2 of 9
www.diodes.com
DMC4015SSD
30
V
GS
= 10V
V
GS
= 4.5V
30
25
25
V
DS
= 5.0V
ADVANCE INFORMATION
NEW PRODUCT
I
D
, DRAIN CURRENT (A)
V
GS
= 4.0V
I
D
, DRAIN CURRENT (A)
20
V
GS
= 3.5V
20
15
V
GS
= 3.0V
15
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
10
10
5
V
GS
= 2.5V
5
0
1
T
A
= 25°C
T
A
= -55°C
0
0
0.5
1
1.5
2
2.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
3
1.5
2
2.5
3
3.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
I
D
= 3.0A
4
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.018
0.016
V
GS
= 4.5V
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.02
0.05
0.04
0.014
0.012
0.01
0.008
0.006
0.004
0.002
0
0
10
15
20
25
I
D
, DRAIN-SOURCE CURRENT
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
V
GS
= 10V
V
GS
= 10V
0.03
0.02
0.01
5
30
0
0
2
4
6
8 10 12 14 16 18
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristic
20
0.02
2
1.8
V
GS
= 10V
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
R
DS(ON)
, DRAIN-SOURCE
ON-RESI STANCE (NORMALIZED)
0.015
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
I
D
= 3A
V
GS
= 4.5V
I
D
= 3A
0.01
T
A
= 25°C
0.005
T
A
= -55°C
0
0
5
10
15
20
25
I
D
, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
30
0
-50
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6 On-Resistance Variation with Temperature
-25
DMC4015SSD
Document number: DS37348 Rev. 4 - 2
3 of 9
www.diodes.com
June 2018
© Diodes Incorporated
DMC4015SSD
R
D S(on)
, DRAI N-SO URCE ON-RESISTANCE (
)
0.05
0.045
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 7 On-Resistance Variation with Temperature
V
GS
= 10V
I
D
= 3A
V
GS
= 4.5V
I
D
= 3A
2.3
V
GS(TH )
, GATE THRESHO LD VO LTAGE (V)
2
I
D
= 1mA
ADVANCE INFORMATION
NEW PRODUCT
1.7
I
D
= 250µA
1.4
1.1
30
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
10000
f = 1MHz
0.8
-50
-25
C
T
, JUNCTION CAPACITANCE (pF)
25
C
iss
I
S
, SOURCE CURRENT (A)
20
T
A
=150°C
= 150°C
1000
15
T
A
= 125°C
C
oss
10
T
A
= 85°C
100
C
rss
5
0
0
T
A
= 25°C
T
A
= -55°C
0.3
0.6
0.9
1.2
1.5
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
10
0
5
10
15
20
25
30
35
40
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
10
V
GS
, GATE-SOURCE VOLTAGE (V)
8
V
DS
= 20V
I
D
= 3.0A
6
4
2
0
0
5
10
15
20
25
30
35
Q
g
, TOTAL GATE CHARGE (nC)
Figure 11 Gate-Charge Characteristics
40
DMC4015SSD
Document number: DS37348 Rev. 4 - 2
4 of 9
www.diodes.com
June 2018
© Diodes Incorporated
DMC4015SSD
Electrical Characteristics P-Channel Q2
(@T
A
= +25°C, unless otherwise specified.)
ADVANCE INFORMATION
NEW PRODUCT
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= -4.5V)
Total Gate Charge (V
GS
= -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
V
SD
C
iss
C
oss
C
rss
R
G
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Min
-40
-1
Typ
-0.7
1626
135
107
11
17
34
3.7
6.0
3.9
2.8
83
30
17.3
7.2
Max
-1
100
-3
29
45
-1.2
Unit
V
µA
nA
V
mΩ
V
Test Condition
V
GS
= 0V, I
D
= -250µA
V
DS
= -40V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -10V, I
D
= -3A
V
GS
= -4.5V, I
D
= -3A
V
GS
= 0V, I
S
= -1A
pF
Ω
V
DS
= -20V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
nC
V
DS
= -20V, I
D
= -3A
nS
V
DD
= -20V, R
L
= 1.6Ω
V
GS
= -10V, R
G
= 3Ω, I
D
= -3A
I
S
= -3A, dI/dt = 100A/μs
I
S
= -3A, dI/dt = 100A/μs
nS
nC
5. Device mounted on FR-4 substrate PCB, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PCB, 2oz copper, with 1inch square copper plate.
7. I
AS
and E
AS
rating are based on low frequency and duty cycles to keep T
J
= +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMC4015SSD
Document number: DS37348 Rev. 4 - 2
5 of 9
www.diodes.com
June 2018
© Diodes Incorporated
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