ZXTP08400BFF
400V PNP MEDIUM POWER HIGH VOLTAGE TRANSISTOR IN SOT23F
Features
BV
CEO
> -400V
BV
ECO
> -6V
I
C
= -0.2A Continuous Collector Current
Low Saturation Voltage V
CE(SAT)
< -220mV @ -100mA
h
FE
Min 100 @ -200mA
1.5W Power Dissipation
Complementary NPN Type: ZXTN08400BFF
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23F
Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.012 grams (Approximate)
Description
This PNP transistor is designed for applications requiring high
blocking voltage. The SOT23F package is pin compatible with the
industry standard SOT23 footprint but offers lower profile and higher
dissipation for applications where power density is of utmost
importance.
SOT23F
C
E
C
B
B
E
Top View
Device symbol
Top View
Pin Configuration
Ordering Information
(Note 4)
Product
ZXTP08400BFFTA
Notes:
Marking
1D6
Reel Size (inch)
7
Tape Width (mm)
8
Quantity per Reel
3,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT23F
1D6
1D6= Product Type Marking Code
YW = Date Code Marking
Y = Year : 0~9
W = Week : A~Z : 1~26
a~z : 27~52
z represents 52 & 53 weeks
ZXTP08400BFF
Document number: DS33729 Rev. 4 - 2
YW
1 of 7
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September 2016
© Diodes Incorporated
ZXTP08400BFF
Absolute Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Collector Voltage (Reverse Blocking)
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Symbol
V
CBO
V
CEO
V
ECO
V
EBO
I
C
I
CM
I
B
Value
-400
-400
-6
-7
-0.2
-1
-0.2
Unit
V
V
V
V
A
A
A
Thermal Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
(Note 5)
Power Dissipation
Linear Derating Factor
(Note 6)
P
D
(Note 7)
(Note 8)
(Note 5)
(Note 6)
(Note 7)
(Note 8)
(Note 9)
Symbol
Value
0.84
6.72
1.34
10.72
1.50
12.0
2.0
16.0
149
93
83
60
43.8
-55 to +150
Unit
W
mW/°
C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
R
θJA
R
θJL
T
J,
T
STG
°
C/W
°
C/W
°
C
ESD Ratings
(Note 10)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
5. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR-4 PCB; device is measured
under still air conditions whilst operating in a steady-state.
6. Same as Note 5, except the device is mounted on 25mm x 25mm 2oz copper.
7. Same as Note 5, except the device is mounted on 50mm x 50mm 2oz copper.
8. Same as Note 7, whilst measured at t < 5 seconds.
9. Thermal resistance from junction to solder-point (at the end of the collector lead).
10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXTP08400BFF
Document number: DS33729 Rev. 4 - 2
2 of 7
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September 2016
© Diodes Incorporated
ZXTP08400BFF
Thermal Characteristics and Derating Information
1.6
Max Power Dissipation (W)
I
C
Collector Current (A)
10
V
CE(sat)
Limited
50mmX50mm FR4, 2oz Cu
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
50mmX50mm FR4, 2oz Cu)
1
DC
1s
100ms
10ms
Single Pulse
o
T
amb
=25 C
1ms
100
s
25mmX25mm
FR4, 2oz Cu)
100m
15mmX15mm
FR4, 1oz Cu)
10m
100m
1
10
20
40
60
80
100 120 140 160
O
V
CE
Collector-Emitter Voltage (V)
Temperature ( C)
Safe Operating Area
80
Derating Curve
Thermal Resistance ( C/W)
Maximum Power (W)
T
amb
=25 C
O
100
O
60
50mmX50mm FR4,
2oz Cu
Single Pulse
O
T
amb
=25 C
50mmX50mm FR4,
2oz Cu
D=0.5
40
D=0.2
Single Pulse
D=0.05
D=0.1
10
20
0
100μ 1m
100
10m 100m
1
10
100
1k
1
100μ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
ZXTP08400BFF
Document number: DS33729 Rev. 4 - 2
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September 2016
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ZXTP08400BFF
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
(Base Open) (Note 11)
Emitter-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage
(Reverse Blocking)
Emitter-Collector Breakdown Voltage
(Base Open)
Collector-Base Cut-Off Current
Emitter-Base Cut-Off Current
ON CHARACTERISTICS (Note 11)
Static Forward Current Transfer Ratio
(@T
A
= +25° unless otherwise specified.)
C,
Symbol
BV
CBO
BV
CEO
BV
EBO
BV
ECX
BV
ECO
I
CBO
I
EBO
Min
-400
-400
-7
-6
-6
—
—
100
100
100
—
—
—
50
—
—
—
—
—
Typ
-500
-480
-8.1
-8.2
-8.6
< -1
—
Max
—
—
—
—
—
-50
-20
-50
—
Unit
V
V
V
V
V
nA
µA
nA
Test Condition
I
C
= -100µA
I
C
= -10mA
I
E
= -100µA
I
E
= -100µA; R
BC
< 1kΩ or
0.25V < V
BC
< -0.25V
I
E
= -100µA
V
CB
= -320V
V
CB
= -320V, T
A
= +100°
C
V
EB
= -5.6V
I
C
= -1mA, V
CE
= -5V
I
C
= -50mA, V
CE
= -5V
I
C
= -200mA, V
CE
= -10V
I
C
= -20mA, I
B
= -1mA
I
C
= -50mA, I
B
= -5mA
I
C
= -100mA, I
B
= -10mA
I
C
= -200mA, I
B
= -40mA
I
C
= -200mA, I
B
= -40mA
I
C
= -200mA, V
CE
= -10V
I
C
= -20mA, V
CE
= -20V,
f = 20MHz
V
CB
= -20V, f = 1MHz
V
CC
= -100V,
I
C
= -100mA,
I
B1
= -I
B2
= -20mA
< -1
220
200
200
-10
-95
-140
-140
-810
-705
70
12.9
95
73.8
1790
153.8
h
FE
300
—
—
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
Note:
V
CE(SAT)
V
BE(SAT)
V
BE(ON)
f
T
C
OBO
t
D
t
R
t
S
t
F
-145
-125
-220
-190
-900
-800
—
20
—
—
—
—
mV
mV
mV
MHz
pF
ns
ns
ns
ns
11. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
ZXTP08400BFF
Document number: DS33729 Rev. 4 - 2
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September 2016
© Diodes Incorporated
ZXTP08400BFF
Typical Electrical Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
3.0
1
Tamb=25 C
O
2.5
I
C
/I
B
=50
I
C
/I
B
=10
150 C
100 C
25 C
-55 C
O
O
O
O
-V
CE(SAT)
(V)
-V
CE(SAT)
(V)
2.0
1.5
1.0
0.5
0.0
10m
100m
I
C
/I
B
=20
I
C
/I
B
=5
I
C
/I
B
=10
10m
1m
10m
100m
100m
-I
C
Collector Current (A)
-I
C
Collector Current (A)
V
CE(SAT)
v I
C
1.6
1.4
150 C
100 C
25 C
O
O
O
V
CE(SAT)
v I
C
V
CE
=10V
400
1.0
I
C
/I
B
=10
-55 C
O
25 C
O
Typical Gain (h
FE
)
Normalised Gain
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1m
300
0.8
-V
BE(SAT)
(V)
200
0.6
150 C
100 C
O
O
-55 C
O
100
0.4
10m
100m
1
0
0.2
1m
10m
100m
-I
C
Collector Current (A)
-I
C
Collector Current (A)
h
FE
v I
C
1.0
0.8
0.6
0.4
100 C
O
V
BE(SAT)
v I
C
V
CE
=10V
-55
癈
25 C
O
-V
BE(ON)
(V)
150 C
O
0.2
1m
10m
100m
1
-I
C
Collector Current (A)
V
BE(ON)
v I
C
ZXTP08400BFF
Document number: DS33729 Rev. 4 - 2
5 of 7
www.diodes.com
September 2016
© Diodes Incorporated
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