DMG3406L
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
Max
50mΩ @ V
GS
= 10V
30V
70mΩ @ V
GS
= 4.5V
2.8A
I
D
Max
T
A
= +25°
C
3.6A
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
NEW PRODUCT
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Battery Charging
Power Management Functions
DC-DC Converters
Portable Power Adaptors
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
Matte Tin Annealed over Copper
Leadframe. Solderable per MIL-STD-202, Method 208
e3
Terminals Connections: See Diagram Below
Weight: 0.008 grams (Approximate)
D
SOT23
D
G
G
S
S
Top View
Internal Schematic
Top View
Pin Out
Ordering Information
(Note 4)
Part Number
DMG3406L-7
DMG3406L-13
Notes:
Case
SOT23
SOT23
Packaging
3000/Tape & Reel
10000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
N36 = Product Type Marking Code
YM = Date Code Marking
Y or Y= Year (ex: C = 2015)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2014
B
Jan
1
Feb
2
2015
C
Mar
3
Apr
4
2016
D
May
5
Jun
6
2017
E
Jul
7
2018
F
Aug
8
Sep
9
2019
G
Oct
O
Nov
N
2020
H
Dec
D
January 2015
© Diodes Incorporated
DMG3406L
Document number: DS37639 Rev. 2 - 2
1 of 6
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DMG3406L
Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°
C
T
A
= +70°
C
Symbol
V
DSS
V
GSS
I
D
I
DM
I
S
Value
30
±20
3.6
2.9
30
1.4
Units
V
V
A
A
A
Pulsed Drain Current (Note 6) (Pulse width
10µS,
Duty Cycle
1%)
Maximum Body Diode Forward Current (Note 6)
NEW PRODUCT
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @T
A
= +25° (Note 5)
C
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient @T
A
= +25° (Note 6)
C
Operating and Storage Temperature Range
Symbol
P
D
R
θJA
P
D
R
θJA
T
J,
T
STG
Value
0.77
164
1.4
90
-55 to +150
Unit
W
°
C/W
W
°
C/W
°
C
Electrical Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
J
= +25°
C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS (ON)
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
Min
30
1.0
Typ
25
31
0.75
495
50
43
2.0
5.3
11.2
1.2
1.9
2.3
3.3
10.3
2.3
Max
1.0
±100
2.0
50
70
1.0
Unit
V
μA
nA
V
mΩ
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 30V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 3.6A
V
GS
= 4.5V, I
D
= 2.8A
V
GS
= 0V, I
S
= 1A
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DS
= 15V, I
D
= 3.6A
V
DD
= 15V, V
GS
= 10V,
R
L
= 2.2Ω, R
G
= 3Ω
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMG3406L
Document number: DS37639 Rev. 2 - 2
2 of 6
www.diodes.com
January 2015
© Diodes Incorporated
DMG3406L
30.0
V
GS
=4.0V
25.0
I
D
, DRAIN CURRENT (A)
V
GS
=10.0V
V
GS
=3.5V
20.0
V
GS
=4.5V
15.0
V
GS
=3.0V
I
D
, DRAIN CURRENT (A)
20
18
16
14
12
10
8
6
4
2
V
GS
=2.0V
0.0
0
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
1
5
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
T
A
=150℃
T
A
=125℃
T
A
=85℃
T
A
=25℃
T
A
=-55℃
V
DS
=5V
10.0
V
GS
=2.5V
5.0
NEW PRODUCT
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(W)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(W)
0.05
0.1
I
D
=3.6A
0.08
0.04
V
GS
=4.5V
0.03
V
GS
=10V
0.06
0.02
0.04
0.01
0.02
I
D
=2.8A
0
5
7
9 11 13 15 17 19 21
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
1
3
0
2
4
6
8
10 12 14 16 18
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
20
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (W)
0.045
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
V
GS
= 10V
150℃
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
0.05
1.8
1.6
1.4
1.2
V
GS
=4.5V, I
D
=3.0A
1
0.8
0.6
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
V
GS
=10V, I
D
=5.0A
125℃
85℃
25℃
-55℃
2
4
6
8
10
12
14
16
18
20
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current
and Temperature
DMG3406L
Document number: DS37639 Rev. 2 - 2
3 of 6
www.diodes.com
January 2015
© Diodes Incorporated
DMG3406L
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (W)
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
V
GS
=10V, I
D
=5.0A
V
GS
=4.5V, I
D
=3.0A
2
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
1.8
1.6
1.4
1.2
1
0.8
0.6
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs Junction
Temperature
I
D
=1mA
I
D
=250mA
NEW PRODUCT
20
18
I
S
, SOURCE CURRENT (A)
16
14
12
10
8
6
4
2
0
0
0.3
0.6
0.9
1.2
1.5
V
GS
=0V, T
A
=25℃
V
GS
=0V,
T
A
=-55℃
V
GS
=0V, T
A
=125℃
V
GS
=0V, T
A
=85℃
V
GS
=0V, T
A
=150℃
C
T
, JUNCTION CAPACITANCE (pF)
1000
f=1MHz
C
iss
100
C
oss
C
rss
10
0
5
10
15
20
25
30
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
10
V
GS
, GATE-SOURCE VOLTAGE (V)
100
R
DS(ON)
Limited
I
D
, DRAIN CURRENT (A)
10
P
W
=100ms
P
W
=1ms
P
W
=10ms
8
6
V
DS
=15V, I
D
=3.6A
1
DC
P
W
=10s
4
2
0.1
0
0
2
4
6
8
10
12
0.01
Qg,TOTAL GATE CHARGE (nC)
Figure 11. Gate Charge
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T
J(MAX)
=150℃
T
A
=25℃
P
W
=1s
Single Pulse
DUT on 1*MRP board
V
GS
=10V
0.1
P
W
=100ms
100
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
DMG3406L
Document number: DS37639 Rev. 2 - 2
January 2015
© Diodes Incorporated
DMG3406L
1
r(t), TRANSIENT THERMAL RESISTANCE
D=0.3
D=0. 5
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
D=Single Pulse
0.001
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
D=0.7
D=0.9
NEW PRODUCT
R
θJA
(t)=r(t) *
R
θJA
R
θJA
=162℃/W
Duty Cycle, D=t1 / t2
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
H
J
All 7°
GAUGE PLANE
0.25
K1
K
a
A
M
L
L1
C
B
D
F
G
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.890 1.00 0.975
K1
0.903 1.10 1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085 0.150 0.110
8°
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
Z
C
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35
X
E
DMG3406L
Document number: DS37639 Rev. 2 - 2
5 of 6
www.diodes.com
January 2015
© Diodes Incorporated
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