A Product Line of
Diodes Incorporated
Green
ZX5T951G
60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
Features
BV
CEO
> -60V
I
C
= -5.5A High Continuous Collector Current
I
CM
= -15A Peak Pulse Current
Low Saturation Voltage V
CE(sat)
< -70mV @ -1A
R
SAT
= 39mΩ for a Low Equivalent On-Resistance
h
FE
Specified Up to -10A for a High Gain Hold Up
Complementary NPN Type: ZX5T851G
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT223
Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads.
Solderable per MIL-STD-202, Method 208
Weight: 0.112 grams (Approximate)
Applications
DC-DC Converters
MOSFET & IGBT Gate Drivers
Charging Circuits
Power Switches
Motor Control
C
SOT223
B
E
Top View
Device Symbol
Top View
Pin-Out
Ordering Information
(Note 4)
Product
ZX5T951GTA
ZX5T951GTC
Notes:
Marking
X5T951
X5T951
Reel size (inches)
7
13
Tape width (mm)
12
12
Quantity per reel
1,000
4,000
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
SOT223
X5T
951
591A
ZX5T951G
Datasheet Number: DS33424 Rev. 4 - 2
YWW
X5T 951 = Product Type Marking Code
YWW = Date Code Marking
Y or Y = Last Digit of Year (ex: 5= 2015)
WW or WW = Week Code (01~53)
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A Product Line of
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ZX5T951G
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
Value
-100
-60
-7
-5.5
-15
Unit
V
V
V
A
A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
Thermal Resistance Junction to Lead
Operating and Storage Temperature Range
(Note 5)
P
D
(Note 6)
(Note 5)
(Note 6)
(Note 7)
R
JA
R
JA
R
JL
T
J,
T
STG
Symbol
Value
3.0
24
1.6
12.8
42
78
10.48
-55 to +150
Unit
W
mW/°C
°C/W
°C
ESD Ratings
(Note 8)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
5. For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. Same as Note (5), except the device is surface mounted on 25mm x 25mm with 1oz copper.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZX5T951G
Datasheet Number: DS33424 Rev. 4 - 2
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ZX5T951G
Thermal Characteristics and Derating Information
V
CE(sat)
10
Limit
Max Power Dissipation (W)
-I
C
Collector Current (A)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25mmX25mm FR4
1oz Cu
52mmX52mm FR4
2oz Cu
1
DC
1s
100ms
10ms
Single Pulse. T
amb
=25°C
52mmX52mm FR4
2oz Cu
100m
1ms
100µs
10m
100m
1
10
100
20
40
60
80
100 120 140 160
-V
CE
Collector-Emitter Voltage (V)
Temperature (°C)
Safe Operating Area
Derating Curve
Single Pulse. T
amb
=25°C
Thermal Resistance (°C/W)
40
30
52mmX52mm FR4
2oz Cu
Max Power Dissipation (W)
100
52mmX52mm FR4
2oz Cu
D=0.5
20
D=0.2
Single Pulse
D=0.05
D=0.1
10
10
0
100µ
1m
10m 100m
1
10
100
1k
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
ZX5T951G
Datasheet Number: DS33424 Rev. 4 - 2
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A Product Line of
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ZX5T951G
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Emitter Cutoff Current
Symbol
BV
CBO
BV
CER
BV
CEO
BV
EBO
I
CBO
I
CER
R ≤ 1kΩ
I
EBO
h
FE
Min
-100
-100
-60
-7
-
-
-
100
100
45
10
-
-
-
-
-
-
-
-
-
-
Typ
-120
-120
-80
-8.1
<1
-
<1
-
<1
250
200
90
25
-15
-55
-90
-195
-1,030
-920
48
120
39
370
Max
-
-
-
-
-20
-0.5
-20
-0.5
-10
-
300
-
-
-25
-70
-120
-250
-1,150
-1,020
-
-
-
-
Unit
V
V
V
V
nA
µA
nA
µA
nA
Static Forward Current Transfer Ratio (Note 9)
-
Collector-Emitter Saturation Voltage (Note 9)
V
CE(sat)
V
BE(sat)
V
BE(on)
C
obo
f
T
t
on
t
off
mV
Base-Emitter Saturation Voltage (Note 9)
Base-Emitter Turn-On Voltage (Note 9)
Output Capacitance (Note 9)
Transition Frequency
Switching Time
Note:
mV
mV
pF
MHz
ns
Test Condition
I
C
= -100µA
I
C
= -1µA, RB ≤ 1kΩ
I
C
= -10mA
I
E
= -100µA
V
CB
= -80V
V
CB
= -80V, T
A
= +100°C
V
CB
= -80V
V
CB
= -80V, T
A
= +100°C
V
EB
= -6V
I
C
= -10mA, V
CE
= -1V
I
C
= -2A, V
CE
= -1V
I
C
= -5A, V
CE
= -1V
I
C
= -10A, V
CE
= -1V
I
C
= -100mA, I
B
= -10mA
I
C
= -1A, I
B
= -100mA
I
C
= -2A, I
B
= -200mA
I
C
= -5A, I
B
= -500mA
I
C
= -5A, I
B
= -500mV
I
C
= -5A, V
CE
= -1V
V
CB
= -10V. f = 1MHz
V
CE
= -10V, I
C
= -100mA
f = 50MHz
V
CC
= -10V, I
C
= -1A
I
B1
= -I
B2
= -100mA
9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
ZX5T951G
Datasheet Number: DS33424 Rev. 4 - 2
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A Product Line of
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ZX5T951G
Typical Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
1
Tamb=25°C
0.5
I
C
/I
B
=10
0.4
- V
CE(SAT)
(V)
- V
CE(SAT)
(V)
I
C
/I
B
=50
I
C
/I
B
=20
100m
0.3
0.2
0.1
-55°C
100°C
25°C
I
C
/I
B
=10
10m
1m
10m
100m
1
10
0.0
1m
10m
100m
1
10
- I
C
Collector Current (A)
- I
C
Collector Current (A)
V
CE(SAT)
v I
C
300
1.4
1.2
100°C
V
CE
=1V
V
CE(SAT)
v I
C
1.4
I
C
/I
B
=10
250
Typical Gain (h
FE
)
1.2
-55°C
Normalised Gain
- V
BE(SAT)
(V)
1.0
0.8
0.6
25°C
200
150
100
1.0
0.8
0.6
0.4
1m
25°C
0.4
0.2
0.0
1m
-55°C
50
10m
100m
1
10
0
100°C
10m
100m
1
10
- I
C
Collector Current (A)
- I
C
Collector Current (A)
h
FE
v I
C
1.4
1.2
V
CE
=1V
-55°C
V
BE(SAT)
v I
C
- V
BE(ON)
(V)
1.0
25°C
0.8
0.6
0.4
1m
10m
100m
100°C
1
10
- I
C
Collector Current (A)
V
BE(ON)
v I
C
ZX5T951G
Datasheet Number: DS33424 Rev. 4 - 2
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March 2015
© Diodes Incorporated