Green
ZXTP2008Z
30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR
Features
BV
CEO
> -30V
I
C
= -5.5A Continuous Collector Current
I
CM
= -20A Peak Pulse Current
Low Saturation Voltage V
CE(SAT)
< -60mV max @ -1A
R
SAT
= 24mΩ @ -5.5A for Low Equivalent On-Resistance
Exceptional Gain Linearity Down to -10mA
h
FE
Specified up to -20A for High Gain Hold Up
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT89
Case Material: Molded Plastic. ―Green‖ Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads. Solderable per MIL-
STD-202, Method 208
Weight: 0.05 grams (Approximate)
Applications
DC-DC Converters
MOSFET Gate Drivers
Charging Circuits
Power Switches
Motor Control
SOT89
E
C
C
B
Top View
Device Schematic
Pin-Out Top View
Ordering Information
(Note 4)
Part Number
ZXTP2008ZTA
Notes:
Marking
949
Reel Size (inches)
7
Tape Width (mm)
12
Quantity per Reel
1,000
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
SOT89
949
949 = Product Type Marking Code
ZXTP2008Z
Document number: DS33709 Rev. 2 - 2
1 of 7
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July 2017
© Diodes Incorporated
ZXTP2008Z
Absolute Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
Value
-50
-30
-7
-5.5
-20
Unit
V
V
V
A
A
Thermal Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
(Note 5)
P
D
(Note 6)
(Note 5)
(Note 6)
(Note 7)
R
θJA
R
θJA
R
θJL
T
J,
T
STG
Symbol
Value
1.5
12
2.1
16.8
83
60
3.23
-55 to +150
Unit
W
mW/°
C
°
C/W
°
C
ESD Ratings
(Note 8)
Characteristic
Electrostatic Discharge – Human Body Model
Electrostatic Discharge – Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
5. For a device mounted with the collector lead on 25mm x 25mm 1oz copper that is on a single-sided 1.6mm FR-4 PCB; device is measured under still air
conditions whilst operating in steady-state.
6. Same as Note 5, except the device is mounted on 50mm x 50mm 1oz copper.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXTP2008Z
Document number: DS33709 Rev. 2 - 2
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July 2017
© Diodes Incorporated
ZXTP2008Z
Thermal Characteristics and Derating Information
I
C
Collector Current (A)
10
Limit
Max Power Dissipation (W)
V
CE(sat)
2.0
50x50mm 1oz Cu
1.5
1.0
25x25mm 1oz Cu
1
DC
1s
100ms
10ms
Single Pulse. T
A
=25 C
25x25mm 1oz Cu
o
100m
1ms
100
s
0.5
0.0
10m
100m
1
10
100
0
20
40
60
80
100 120 140 160
o
V
CE
Collector-Emitter Voltage (V)
Temperature ( C)
Safe Operating Area
80
Derating Curve
Max Power Dissipation (W)
Thermal Resistance ( C/W)
25x25mm 1oz Cu
100
Single Pulse. T
A
=25 C
25x25mm 1oz Cu
o
60
D=0.5
o
40
D=0.2
Single Pulse
D=0.05
10
20
D=0.1
0
100μ
1m
10m 100m
1
10
100
1k
1
100μ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
ZXTP2008Z
Document number: DS33709 Rev. 2 - 2
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July 2017
© Diodes Incorporated
ZXTP2008Z
Electrical Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Symbol
BV
CBO
BV
CER
BV
CEO
BV
EBO
I
CBO
I
CER
I
EBO
Min
-50
-50
-30
-7
—
—
—
—
—
Typ
-70
-70
-40
-8
< -1
—
< -1
—
< -1
-25
-35
-55
-55
-130
-970
-860
225
200
145
20
110
83
43
230
Max
—
—
—
—
-20
-0.5
-20
-0.5
-10
-40
-55
-80
-80
-175
-1070
-960
300
Unit
V
V
V
V
nA
µA
nA
µA
nA
Test Condition
I
C
= -100µA
I
C
= -1µA, R
B
≤ 1kΩ
I
C
= -10mA
I
E
= -100µA
V
CB
= -40V
V
CB
= -40V, T
A
= +100°
C
V
CB
= -40V, R≤1kΩ
V
CB
= -40V, T
A
= +100° R≤1kΩ
C,
V
EB
= -6V
I
C
= -0.5A, I
B
= -20mA
I
C
= -1A, I
B
= -100mA
I
C
= -1A, I
B
= -20mA
I
C
= -2A, I
B
= -200mA
I
C
= -5.5A, I
B
= -500mA
I
C
= -5.5A, I
B
= -500mA
I
C
= -5.5A, V
CE
= -1V
I
C
= -10mA, V
CE
= -1V
I
C
= -1A, V
CE
= -1V
I
C
= -5A, V
CE
= -1V
I
C
= -20A, V
CE
= -1V
V
CE
= -10V, I
C
= -100mA,
f = 50MHz
V
CB
= -10V, f = 1MHz
V
CC
= -10V, I
C
= -1A,
I
B1
= -I
B2
= 100mA
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage (Note 9)
V
CE(SAT)
—
mV
Base-Emitter Saturation Voltage (Note 9)
Base-Emitter Turn-On Voltage (Note 9)
DC Current Gain (Note 9)
V
BE(SAT)
V
BE(ON)
h
FE
—
—
100
100
70
10
—
—
—
—
mV
mV
—
Transition Frequency
Output Capacitance (Note 9)
Switching Times
Note:
f
T
C
OBO
t
ON
t
OFF
—
—
—
—
MHz
pF
ns
9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
ZXTP2008Z
Document number: DS33709 Rev. 2 - 2
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© Diodes Incorporated
ZXTP2008Z
Typical Electrical Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
1
T
A
=25 C
o
0.5
I
C
/I
B
=10
0.4
- V
CE(SAT)
(V)
100m
I
C
/I
B
=20
- V
CE(SAT)
(V)
I
C
/I
B
=50
0.3
100 C
o
0.2
0.1
25 C
o
10m
I
C
/I
B
=10
-55 C
o
1m
10m
100m
1
10
0.0
10m
100m
1
10
- I
C
Collector Current (A)
V
CE(SAT)
v I
C
1.4
1.2
100 C
o
- I
C
Collector Current (A)
V
CE(SAT)
v I
C
V
CE
=1V
250
1.4
I
C
/I
B
=10
- V
BE(SAT)
(V)
1.0
0.8
0.6
0.4
0.2
0.0
1m
10m
100m
1
10
-55 C
o
25 C
o
225
200
175
150
125
100
75
50
25
0
Typical Gain (h
FE
)
1.2
1.0
0.8
0.6
0.4
1m
10m
25 C
o
Normalised Gain
-55 C
o
100 C
o
100m
1
10
- I
C
Collector Current (A)
- I
C
Collector Current (A)
h
FE
v I
C
V
BE(SAT)
v I
C
1.4
V
CE
=1V
1.2
- V
BE(ON)
(V)
-55 C
o
1.0
25 C
o
0.8
0.6
0.4
1m
10m
100m
100 C
o
1
10
- I
C
Collector Current (A)
V
BE(ON)
v I
C
ZXTP2008Z
Document number: DS33709 Rev. 2 - 2
5 of 7
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July 2017
© Diodes Incorporated
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