DMP3017SFGQ
30V P-CHANNEL ENHANCEMENT MODE MOSFET
®
POWERDI
Product Summary
ADVANCE INFORMATION
V
(BR)DSS
-30V
R
DS(ON)
Max
10mΩ @ V
GS
= -10V
18mΩ @ V
GS
= -4.5V
I
D
Max
T
A
= +25°C
-11.5A
-8.7A
Features and Benefits
Low R
DS(ON)
– Ensures On-State Losses Are Minimized
Small form factor thermally efficient package enables higher
density end products
Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP capable (Note 4)
Description
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
), yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Applications
Backlighting
Power Management Functions
DC-DC Converters
Mechanical Data
Case: POWERDI 3333-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.072 grams (Approximate)
®
POWERDI3333-8
D
S
S
Pin 1
S
G
G
ESD PROTECTED
D
D
D
D
Bottom View
Gate Protection
Diode
S
Top View
Equivalent Circuit
Ordering Information
(Note 5)
Part Number
DMP3017SFGQ-7
DMP3017SFGQ-13
Notes:
Case
POWERDI3333-8
POWERDI3333-8
Packaging
2,000/Tape & Reel
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html
POWERDI is a registered trademark of Diodes Incorporated.
DMP3017SFGQ
Document number: DS38181 Rev. 1 - 2
1 of 8
www.diodes.com
September 2015
© Diodes Incorporated
DMP3017SFGQ
Marking Information
P17= Product Type Marking Code
YYWW = Date Code Marking
YY = Last digit of year (ex: 13 = 2013)
WW = Week code (01 ~ 53)
ADVANCE INFORMATION
P17
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Steady
State
t<10s
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current (Note 8) L = 1mH
Repetitive Avalanche Energy (Note 8) L = 1mH
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
D
I
S
I
DM
I
AR
E
AR
Value
-30
±25
-11.5
-9.4
-15.2
-12.1
-3.0
-80
14
104
Units
V
V
A
A
A
A
A
mJ
Continuous Drain Current (Note 7) V
GS
= -10V
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
Notes:
YYWW
Symbol
T
A
= +25°C
T
A
= +70°C
Steady State
t<10s
T
A
= +25°C
T
A
= +70°C
Steady State
t<10s
P
D
R
θJA
P
D
R
θJA
R
θJC
T
J,
T
STG
Value
0.94
0.6
137
82
2.2
1.3
60
36
3.0
-55 to +150
Units
W
°C/W
°C/W
W
°C/W
°C/W
°C/W
°C
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout, please see
http://www.diodes.com/datasheets/ap02001.pdf for latest version.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.
8. I
AR
and E
AR
rating are based on low frequency and duty cycles to keep T
J
= +25°C
DMP3017SFGQ
Document number: DS38181 Rev. 1 - 2
2 of 8
www.diodes.com
September 2015
© Diodes Incorporated
DMP3017SFGQ
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
ADVANCE INFORMATION
Characteristic
OFF CHARACTERISTICS
(Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
(Note 9)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
DYNAMIC CHARACTERISTICS
(Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge (V
GS
= 5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
BODY DIODE CHARACTERISTICS
Diode Forward Voltage
Reverse Recovery Time (Note 9)
Reverse Recovery Charge (Note 9)
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
|Y
fs
|
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
V
SD
t
rr
Q
rr
Min
-30
—
—
-1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
8.5
15
24
2246
352
294
5.1
20.5
41
7.6
8.0
7.5
15.4
45.6
36.8
-0.7
20
9.5
Max
—
-1
±10
-3.0
10
18
—
—
—
—
12
—
—
—
—
—
—
—
—
—
—
—
Unit
V
μA
μA
V
mΩ
S
pF
pF
pF
Ω
nC
nC
nC
nC
nS
nS
nS
nS
V
nS
nC
Test Condition
V
GS
= 0V, I
D
= -250μA
V
DS
= -24V, V
GS
= 0V
V
GS
= ±25V, V
DS
= 0V
V
DS
= V
GS
, I
D
= -250μA
V
GS
= -10V, I
D
= -11.5A
V
GS
= -4.5V, I
D
= -8.5A
V
DS
= -5V, I
D
= -11.5A
V
DS
= -15V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
V
DS
= -15V, I
D
= -11.5A
V
DD
= -15V, V
GS
= -10V,
R
G
= 6Ω, I
D
= -11.5A
V
GS
= 0V, I
S
= -1A
I
S
= -11.5A, dI/dt = 100A/μs
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
DMP3017SFGQ
Document number: DS38181 Rev. 1 - 2
3 of 8
www.diodes.com
September 2015
© Diodes Incorporated
DMP3017SFGQ
30.0
V
GS
= -10V
30
V
DS
= -5.0V
25.0
25
-I
D
, DRAIN CURRENT (A)
V
GS
= -5.5V
ADVANCE INFORMATION
-I
D
, DRAIN CURRENT (A)
20.0
V
GS
= -5.5V
V
GS
= -4.0V
V
GS
= -3.5V
20
15.0
15
T
A
= 150°C
T
A
= 85°C
10.0
V
GS
= -3.0V
10
5.0
5
T
A
= 125°C
T
A
= 25°C
T
A
= -55°C
V
GS
= -2.5V
0.0
0
2
3
4
-V
DS
, DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
1
5
0
0
0.5
1 1.5 2 2.5 3 3.5 4 4.5
-V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
5
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.02
0.018
0.016
0.014
0.012
0.01
V
GS
= -10V
V
GS
= -4.5V
0.03
V
GS
= -4.5V
0.025
T
A
= 150°C
0.02
T
A
= 125°C
T
A
= 85°C
0.015
T
A
= 25°C
0.008
0.006
0.004
0.002
0
0
5
10
15
20
25
-I
D
, DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
30
0.01
T
A
= -55°C
0.005
0
1
2
3
4
5
6
7
8
9
-I
D
, DRAIN SOURCE CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
10
R
DS(on)
, DRAIN-SOURCE ON-RESISTANCE (
)
1.8
0.03
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.6
0.025
1.4
V
GS
= -5V
I
D
= -5A
0.02
V
GS
= -5V
I
D
= -5A
1.2
0.015
1.0
0.01
V
GS
= -10V
I
D
= -10A
0.8
0.005
0.6
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 5 On-Resistance Variation with Temperature
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6 On-Resistance Variation with Temperature
DMP3017SFGQ
Document number: DS38181 Rev. 1 - 2
4 of 8
www.diodes.com
September 2015
© Diodes Incorporated
DMP3017SFGQ
3.0
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
30
2.8
ADVANCE INFORMATION
2.4
2.2
2.0
1.8
-I
D
= 250µA
-I
D
= 1mA
-I
S
, SOURCE CURRENT (A)
2.6
25
20
T
A
= 25
C
15
10
1.6
1.4
1.2
1.0
-50
5
0
0
0.3
0.6
0.9
1.2
1.5
-V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
10000
10
V
GS
GATE THRESHOLD VOLTAGE (V)
C
T
, JUNCTION CAPACITANCE (pF)
9
8
7
6
5
4
3
2
1
0
0
V
DS
= -15V
I
D
= -1.5A
C
iss
1000
C
oss
C
rss
100
0
f = 1MHz
5
10
15
20
25
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
30
5
10 15 20 25 30 35 40
Q
g
, TOTAL GATE CHARGE (nC)
Figure 10 Gate Charge
45
100
R
DS(on)
Limited
-I
D
, DRAIN CURRENT (A)
10
DC
1
P
W
= 10s
P
W
= 1s
P
W
= 100ms
P
W
= 10ms
0.1
T
J(max)
= 150°C
T
A
= 25°C
V
GS
= -10V
Single Pulse
DUT on 1 * MRP Board
P
W
= 1ms
P
W
= 100µs
0.01
0.01
1
10
0.1
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 11 SOA, Safe Operation Area
100
DMP3017SFGQ
Document number: DS38181 Rev. 1 - 2
5 of 8
www.diodes.com
September 2015
© Diodes Incorporated
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