DMN2005UFG
20V N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI3333-8
Product Summary
ADVANCE INFORMATION
ADVANCED INFORMATION
BV
DSS
20V
R
DS(ON)
Max
4.6m @ V
GS
= 4.5V
8.7m @ V
GS
= 2.5V
I
D
Max
T
C
= +25° (Note 9)
C
50A
36A
Features and Benefits
Low R
DS(ON)
– ensures on state losses are minimized
Small form factor thermally efficient package enables higher
density end products
Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
100% UIS & Rg tested
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
An Automotive-Compliant Part is Available Under Separate
Datasheet (DMN2005UFGQ)
Description
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Applications
Backlighting
Power Management Functions
DC-DC Converters
Mechanical Data
PowerDI3333-8
Case: PowerDI 3333-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.072 grams (Approximate)
®
D
S
S
Pin 1
S
G
G
D
D
D
D
S
Top View
Equivalent Circuit
Bottom View
Ordering Information
(Note 4)
Part Number
DMN2005UFG-7
DMN2005UFG-13
Notes:
Case
PowerDI3333-8
PowerDI3333-8
Packaging
2,000/Tape & Reel
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
YYWW
N05= Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 19 = 2019)
WW = Week Code (01 to 53)
N05
PowerDI is a registered trademark of Diodes Incorporated.
DMN2005UFG
Document number: DS36943 Rev. 4 - 2
1 of 7
www.diodes.com
March 2019
© Diodes Incorporated
DMN2005UFG
Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Drain-Source Voltage
Symbol
V
DSS
V
GSS
Steady
State
T
C
= +25°
C
T
C
= +70°
C
T
A
= +25°
C
T
A
= +70°
C
I
D
I
D
I
DM
I
S
I
AS
E
AS
Value
20
±12
50
40
18
14
130
2.6
23.9
58.4
Unit
V
V
A
A
A
A
A
mJ
ADVANCE INFORMATION
ADVANCED INFORMATION
Gate-Source Voltage
Continuous Drain Current (Notes 6 & 9) V
GS
= 4.5V
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Avalanche Current , L = 0.2mH
Repetitive Avalanche Energy, L = 0.2mH
Thermal Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Notes:
Symbol
T
A
= +25°
C
Steady State
T
A
= +25°
C
Steady State
P
D
R
JA
P
D
R
JA
R
JC
T
J,
T
STG
Value
1.05
120
2.27
55
4.2
-55 to +150
Unit
W
°
C/W
W
°
C/W
°
C
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
DMN2005UFG
Document number: DS36943 Rev. 4 - 2
2 of 7
www.diodes.com
March 2019
© Diodes Incorporated
DMN2005UFG
Electrical Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
OFF CHARACTERISTICS (Note 7)
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
t
RR
Q
RR
Min
20
—
—
0.4
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
0.7
4
4.9
0.8
6,495
546
477
0.7
68.8
164
10.4
17.4
12.4
25.7
114
38
16.1
8.5
Max
—
10
±100
1.2
4.6
8.7
1.1
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
µA
nA
V
mΩ
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
V
GS
= 5V, V
DS
= 10V,
R
G
= 4.7Ω, I
D
= 13.5A
I
F
= 13.5A, di/dt = 100A/μs
I
F
= 13.5A, di/dt = 100A/μs
V
DS
= 16V, I
D
= 27A
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DS
= 10V, V
GS
= 0V,
f = 1MHz
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 20V, V
GS
= 0V
V
GS
= ±12V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 4.5V, I
D
= 13.5A
V
GS
= 2.5V, I
D
= 13.5A
V
GS
= 0V, I
S
= 27A
ADVANCE INFORMATION
ADVANCED INFORMATION
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
J
= +25°
C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
9. Limited by package.
30
25
I
D
, DRAIN CURRENT (A)
V
GS
= 10V
V
GS
= 4.5V
V
GS
= 3.0V
V
GS
= 2.0V
30
V
DS
= 5.0V
25
)
A
(
T 20
N
E
R
R
U
C 15
N
I
A
R
D 10
,
D
I
5
I
D
, DRAIN CURRENT (A)
V
GS
= 1.5V
V
GS
= 2.5V
20
15
10
V
GS
= 1.3V
T
A
= 150°
C
T
A
= 125°
C
T
A
= 85°
C
T
A
= 25°
C
T
A
= -55°
C
5
0
0
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
2
0
0
0.5
1
1.5
2
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
2.5
DMN2005UFG
Document number: DS36943 Rev. 4 - 2
3 of 7
www.diodes.com
March 2019
© Diodes Incorporated
DMN2005UFG
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.006
0.01
0.009
0.008
0.007
I
D
= 13.5A
ADVANCE INFORMATION
ADVANCED INFORMATION
0.005
V
GS
= 2.5V
0.004
V
GS
= 4.5V
0.006
0.005
0.004
0.003
0
0.003
0.002
0
5
10
15
20
25
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
V
GS
= 4.5V
30
2
4
6
8
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristic
10
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE ()
)
(
E
C
N
A
T
S
I
S
E
R
-
N
O
E
C
R
U
O
S
-
N
I
A
R
D
,
)
N
R
0.008
0.007
1.8
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.6
0.006
0.005
0.004
0.003
0.002
0.001
0
T
A
= 25°
C
T
A
= 125°
C
T
A
= 150°
C
V
GS
= 2.5V
I
D
= 13.5A
1.4
V
GS
= 4.5V
I
D
= 13.5A
T
A
= 85°
C
1.2
T
A
= -55°
C
1
0.8
O
(
S
D
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
I
D
, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
)
V
(
E
G
A
T
L
O
V
D
L
O
H
S
E
R
H
T
E
T
A
G
,
)
h
V
0.6
-50
-25
0
25
50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6 On-Resistance Variation with Temperature
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.008
1
0.007
V
GS
= 2.5V
I
D
= 13.5A
0.8
0.006
0.6
I
D
= 250µA
I
D
= 1mA
0.005
V
GS
= 2.5V
4.5V
I
D
= 13.5A
0.4
0.004
0.2
0.003
t
(
S
G
0.002
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 7 On-Resistance Variation with Temperature
4 of 7
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-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (C)
Figure 8 Gate Threshold Variation vs. Junction Temperature
0
-50
DMN2005UFG
Document number: DS36943 Rev. 4 - 2
March 2019
© Diodes Incorporated
DMN2005UFG
25
100000
f = 1MHz
ADVANCE INFORMATION
ADVANCED INFORMATION
20
)
A
(
T
N
E
R 15
R
U
C
E
C
R 10
U
O
S
,
S
I
5
I
S
, SOURCE CURRENT (A)
C
T
, JUNCTION CAPACITANCE (pF)
10000
C
iss
T
A
= 150°
C
T
A
= 125°
C
T
A
= 85°
C
T
A
= 25°
C
T
A
= -55°
C
1000
C
oss
C
rss
0
100
0
0.3
0.6
0.9
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
1000
0
2
4
6
8 10 12 14 16 18
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
20
10
V
GS
V
GS
, GATE-SOURCE
VOLTAGE (V)
GATE THRESHOLD
VOLTAGE (V)
R
DS(ON)
LIMITED
P
W
=10μs
P
W
=1μs
8
I
D
, DRAIN CURRENT (A)
100
6
V
DS
= 16V
I
D
= 27A
10
P
W
=100μs
1
P
W
=1ms
T
J(MAX)
=150℃
T
C
=25℃
Single Pulse
DUT on infinite
heatsink
V
GS
=10V
P
W
=10ms
P
W
=100ms
P
W
=1s
4
2
0.1
0
0
20
40 60 80 100 120 140 160 180
Q
g
, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.01
0.01
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
100
r(t), TRANSIENT THERMAL RESISTANCE
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
D = Single Pulse
R
JA
(t) = r(t) * R
JA
R
JA
=
132°
/W
132癈
C/W
Duty Cycle, D = t1/ t2
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
100
1000
0.001
0.0001
0.001
DMN2005UFG
Document number: DS36943 Rev. 4 - 2
5 of 7
www.diodes.com
March 2019
© Diodes Incorporated
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