DMP3010LPSQ
Green
P-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI
Product Summary
V
(BR)DSS
-30V
R
DS(ON)
7.5mΩ @ V
GS
= -10V
10mΩ @ V
GS
= -4.5V
I
D
T
A
= +25°C
-36A
-31A
Features
Thermally Efficient Package
–
Cooler Running Applications
High Conversion Efficiency
Low R
DS(ON)
–
Minimizes On-State Losses
Low Input Capacitance
Fast Switching Speed
<1.1mm Package Profile
–
Ideal for Thin Applications
ESD HBM Protected up to 1kV
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Available (Note 4)
Description
This new generation 30V P-Channel Enhancement Mode MOSFET is
designed to minimize R
DS(ON)
, yet maintain superior switching
performance. This device is ideal for use in notebook battery power
management and loadswitch.
Applications
Notebook Battery Power Management
DC-DC Converters
Loadswitch
Mechanical Data
Case: PowerDI 5060-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Terminals: Finish
–
100% Matte Tin Annealed over Copper
Leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
®
PowerDI5060-8
Pin1
D
G
S
Top View
Bottom View
Top View
Pin Configuration
Internal Schematic
Ordering Information
(Note 5)
Part Number
DMP3010LPSQ-13
Notes:
Qualification
Automotive
Case
PowerDI5060-8
Packaging
2,500/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html
for more information about Diodes Incorporated’s definitions of Halogen-
and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free
"Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
PowerDI is a registered trademark of Diodes Incorporated.
DMP3010LPSQ
Document number: DS36683 Rev. 5 - 2
1 of 8
www.diodes.com
November 2015
© Diodes Incorporated
DMP3010LPSQ
Marking Information
PowerDI5060-8
D
D
D
D
P3010LS
YY WW
= Manufacturer’s Marking
P3010LS = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 15 = 2015)
WW = Week (01 - 53)
S
S
S
G
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 8) V
GS
= 10V
Continuous Drain Current (Note 8) V
GS
= 4.5V
Continuous Drain Current (Note 7) V
GS
= 10V
Pulsed Drain Current (Notes 7 & 10)
Avalanche Current (Notes 11 & 12)
Avalanche Energy (Notes 11 & 12) L = 1mH
Steady
State
Steady
State
Steady
State
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
D
I
D
I
DM
I
AS
E
AS
Value
-30
±20
-36
-29
-31
-25
-14.5
-11.5
-100
-17.5
153
Unit
V
V
A
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 6)
Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 7)
Power Dissipation (Note 8)
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 8)
Power Dissipation (Notes 8 & 9)
Thermal Resistance, Junction to Case @T
C
= +25°C (Notes 8 & 9)
Operating and Storage Temperature Range
Notes:
Symbol
P
D
R
θJA
P
D
R
θJA
P
D
R
θJA
P
D
R
θJC
T
J
, T
STG
Value
1.26
97
2.18
55
14.37
8.7
58.7
2.13
-55 to +150
Unit
W
°C/W
W
°C/W
W
°C/W
W
°C/W
°C
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
8. Device mounted on FR-4 PCB with infinite heatsink.
9. R
θJC
is guaranteed by design while R
θCA
is determined by the user’s board design.
10. Repetitive rating, pulse width limited by junction temperature, 10μs pulse, duty cycle = 1%.
11. I
AS
and E
AS
rating are based on low frequency and duty cycles to keep T
J
= +25°C.
DMP3010LPSQ
Document number: DS36683 Rev. 5 - 2
2 of 8
www.diodes.com
November 2015
© Diodes Incorporated
DMP3010LPSQ
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS
(Note 12)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
(Note 12)
Gate Threshold Voltage
Static Drain-Source On-Resistance
(@T
A
= +25°C, unless otherwise specified.)
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
Min
-30
—
—
-1.1
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
-1.6
5.7
7.2
30
-0.65
6,234
1,500
774
1.28
126.2
59.2
16.1
15.7
11.4
9.4
260.7
99.3
Max
—
-1
±100
-2.1
7.5
10
—
-1
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
μA
nA
V
mΩ
S
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
Test Condition
V
GS
= 0V, I
D
= -250μA
V
DS
= -30V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= -250μA
V
GS
= -10V, I
D
= -10A
V
GS
= -4.5V, I
D
= -10A
V
DS
= -15V, I
D
= -10A
V
GS
= 0V, I
S
= -1A
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DS
= -15V, I
D
= -10A
V
DS
= -15V, V
GS
= -4.5V,
I
D
= -10A
V
DS
= -15V, V
GEN
= -10V,
R
G
= 6Ω, I
D
= -1A
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
(Note 13)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= -10V)
Total Gate Charge (V
GS
= -4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
t
D(on)
t
r
t
D(off)
t
f
12. Short duration pulse test used to minimize self-heating effect.
13. Guaranteed by design. Not subject to product testing.
DMP3010LPSQ
Document number: DS36683 Rev. 5 - 2
3 of 8
www.diodes.com
November 2015
© Diodes Incorporated
DMP3010LPSQ
30
V
GS
= -10V
30
25
-I
D
, DRAIN CURRENT (A)
25
-I
D
, DRAIN CURRENT (A)
V
GS
= -4.5V
V
GS
= -5.0V
V
DS
= -5V
20
V
GS
= -3.5V
V
GS
= -3.0V
20
15
V
GS
= -2.5V
15
10
10
T
A
= 150°C
5
0
V
GS
= -2.0V
5
0
0
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
0
0.5
1
1.5
2
2.5
3
3.5
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
4
0.5
1
1.5
2
2.5
-V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
3
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE ( )
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE ( )
0.020
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
0
0
10
15
20
25
-I
D
, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
5
30
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
V
GS
= -4.5V
0.016
0.012
0.008
V
GS
= -4.5V
0.004
V
GS
= -10V
0
0
5
10
15
20
25
-I
D
, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
30
1.6
R
DSON
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
0.020
R
DSON
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.4
0.016
1.2
0.012
1.0
V
GS
= -10V
I
D
= -20A
0.008
V
GS
= -4.5V
I
D
= -10A
0.8
V
GS
= -4.5V
I
D
= -10A
0.004
V
GS
= -10V
I
D
= -20A
0.6
-50
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
-25
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
DMP3010LPSQ
Document number: DS36683 Rev. 5 - 2
4 of 8
www.diodes.com
November 2015
© Diodes Incorporated
DMP3010LPSQ
2.5
30
-V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
2.0
-I
S
, SOURCE CURRENT (A)
25
20
1.5
I
D
= -1mA
1.0
I
D
= -250μA
15
T
A
= 25°C
10
0.5
5
0
0
-50 -25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
10,000
0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.4
100,000
C
iss
C
T
, JUNCTION CAPACITANCE (pF)
-I
DSS
, LEAKAGE CURRENT (nA)
10,000
T
A
= 150°C
C
oss
1,000
T
A
= 125°C
1,000
C
rss
100
T
A
= 85°C
10
T
A
= 25°C
f = 1MHz
100
0
4
8
12
16
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Total Capacitance
20
1
0
5
10
15
20
25
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
30
Fig. 10 Typical Leakage Current vs. Drain-Source Voltage
10
100
R
DS(on)
Limited
-V
GS
, GATE-SOURCE VOLTAGE (V)
8
-I
D
, DRAIN CURRENT (A)
V
DS
= -15V
I
D
= -10A
10
DC
6
1
P
W
= 10s
P
W
= 1s
P
W
= 100ms
4
0.1
T
J(max)
= 150°C
P
W
= 10ms
P
W
= 1ms
2
0
0
40
60
80
100
120 140
Q
g
, TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Source Voltage vs. Total Gate Charge
20
0.01
0.1
T
A
= 25°C
V
GS
= -10V
Single Pulse
DUT on 1 * MRP Board
1
10
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 SOA, Safe Operation Area
100
DMP3010LPSQ
Document number: DS36683 Rev. 5 - 2
5 of 8
www.diodes.com
November 2015
© Diodes Incorporated
京公网安备 11010802033920号
EEWORLD
