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GBJ2506-F

Description
Reverse peak voltage: 600V Average rectified current (Io): 25A Forward voltage drop (Vf): 1.05V @ 12.5A 600V, 25A
CategoryDiscrete semiconductor    Rectifier bridge   
File Size132KB,4 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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GBJ2506-F Overview

Reverse peak voltage: 600V Average rectified current (Io): 25A Forward voltage drop (Vf): 1.05V @ 12.5A 600V, 25A

GBJ2506-F Parametric

Parameter NameAttribute value
Reverse peak voltage600V
Average rectified current (Io)25A
Forward voltage drop (Vf)1.05V @ 12.5A
Pb
GBJ25005 - GBJ2510
25A GLASS PASSIVATED BRIDGE RECTIFIER
Features
Glass Passivated Die Construction
High Case Dielectric Strength of 2500V
RMS
Low Reverse Leakage Current
Surge Overload Rating to 350A Peak
Ideal for Printed Circuit Board Applications
UL Listed Under Recognized Component
Index, File Number E94661
Lead Free Finish; RoHS Compliant (Notes 1 & 2)
Mechanical Data
Case: GBJ
Case Material: Molded Plastic. UL Flammability Classification
94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Plated Leads, Solderable per MIL-STD-202, Method
208
Lead Free Plating (Tin Finish).
Polarity: Molded on Body
Mounting: Through Hole for #6 Screw
Mounting Torque: 5.0 in-lbs Maximum
Marking: Type Number
Weight: 6.6 grams (Approximate)
Maximum Ratings
(@T
A
= 25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Rectified Output Current
(Note 3)
@ T
C
= 100°C
Non-Repetitive Peak Forward Surge Current 8.3 ms
Single Half Sine-Wave Superimposed on rated Load
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
GBJ
25005
50
35
GBJ
2501
100
70
GBJ
2502
200
140
GBJ
2504
400
280
25
350
GBJ
2506
600
420
GBJ
2508
800
560
GBJ
2510
1000
700
Unit
V
V
A
A
Thermal Characteristics
Characteristic
Typical Thermal Resistance Junction to Case
Operating and Storage Temperature Range
(Note 5)
Symbol
R
JC
T
J,
T
STG
Value
1.0
-65 to +150
Unit
°C/W
°C
Electrical Characteristics
(@T
A
= 25°C, unless otherwise specified.)
Characteristic
Forward Voltage (per element)
Peak Reverse Current
at Rated DC Blocking Voltage
I
2
t Rating for Fusing (t < 8.3ms)
Typical Total Capacitance (per element)
Notes:
@ I
F
= 12.5A
@ T
C
= 25°C
@ T
C
= 125°C
(Note 3)
(Note 4)
Symbol
V
FM
I
R
I
2
t
C
T
Value
1.05
10
500
510
85
Unit
V
µA
A
2
s
pF
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Non-repetitive, for t > 1ms and < 8.3 ms.
4. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
5. Thermal resistance from junction to case per element. Unit mounted on 250 x 250 x 20mm aluminum plate heat sink.
GBJ25005 - GBJ2510
Document number: DS21221 Rev. 9 - 2
1 of 4
www.diodes.com
January 2018
© Diodes Incorporated

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Description Reverse peak voltage: 600V Average rectified current (Io): 25A Forward voltage drop (Vf): 1.05V @ 12.5A 600V, 25A Reverse peak voltage: 400V Average rectified current (Io): 25A Forward voltage drop (Vf): 1.05V @ 12.5A 400V, 25A
Reverse peak voltage 600V 400V
Average rectified current (Io) 25A 25A
Forward voltage drop (Vf) 1.05V @ 12.5A 1.05V @ 12.5A
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