ZXMP3A13F
30V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
Max R
DS(ON)
0.21Ω @ V
GS
= -10V
-30V
0.33Ω @ V
GS
= -4.5V
SOT23
-1.1A
Package
Max I
D
T
A
= +25°C
-1.6A
Features
Low On-Resistance
Fast Switching Speed
Low Threshold
Low Gate Drive
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This new generation of trench MOSFETs utilizes a unique structure
that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, and
power management applications.
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Annealed over Copper Leadframe
Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (Approximate)
Applications
DC-DC Converters
Power Management Functions
Disconnect Switches
Motor Control
SOT23
S
D
G
Top View
Top View
Pin Out
D
G
S
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
ZXMP3A13FTA
ZXMP3A13FTC
Notes:
Compliance
Standard
Standard
Case
SOT23
SOT23
Quantity per Reel
3,000
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green"
and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
313
313 = Product Type Marking Code
ZXMP3A13F
Document number: DS33573 Rev. 2 - 2
1 of 8
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October 2015
© Diodes Incorporated
ZXMP3A13F
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
V
GS
= 10V
T
A
= +70°C
(Note 6)
(Note 6)
(Note 5)
Symbol
V
DSS
V
GS
I
D
I
DM
I
S
I
SM
Value
-30
±20
-1.6
-1.3
-1.4
-6
-1.2
-6
Units
V
V
A
A
A
A
Pulsed Drain Current (Note 7)
Continuous Source Current (Body Diode) (Note 6)
Pulsed Source Current (Body Diode) (Note 7)
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Linear Derating Factor
Power Dissipation (Note 6)
Linear Derating Factor
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Notes:
Symbol
P
D
P
D
R
θJA
R
θJA
T
J,
T
STG
Value
625
5
806
6.4
200
155
-55 to +150
Unit
mW
mW/°C
mW
mW/°C
°C/W
°C/W
°C
5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
6. For a device surface mounted on FR4 PCB measured at t ≤5 secs.
7. Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10μs - pulse current limited by maximum junction temperature.
ZXMP3A13F
Document number: DS33573 Rev. 2 - 2
2 of 8
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October 2015
© Diodes Incorporated
ZXMP3A13F
Thermal Characteristics
ZXMP3A13F
Document number: DS33573 Rev. 2 - 2
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© Diodes Incorporated
ZXMP3A13F
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 8)
Forward Transconductance (Notes 8 & 10)
DYNAMIC CHARACTERISTICS
(Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING
(Notes 9 & 10)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (Note 8)
Reverse Recovery Time (Note 10)
Reverse Recovery Charge (Note 10)
Notes:
(@T
A
= +25°C, unless otherwise specified.)
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
g
fs
C
iss
C
oss
C
rss
t
d(ON)
t
R
t
D(OFF)
t
f
Q
g
Q
g
Q
gs
Q
gd
V
SD
t
RR
Q
RR
Min
-30
-1.0
Typ
2.4
206
59.3
49.2
1.5
3.0
11.1
7.6
3.8
6.4
0.69
2.0
-0.85
15.6
9.6
Max
-0.5
±100
0.21
0.33
-0.95
Unit
V
µA
nA
V
Ω
S
Test Condition
I
D
= -250µA, V
GS
= 0V
V
DS
= -30V, V
GS
= 0V
V
GS
=
20V,
V
DS
= 0V
I
D
= -250µA, V
DS
= V
GS
V
GS
= -10V, I
D
= -1.4A
V
GS
= -4.5V, I
D
= -1.1A
V
DS
= -15V, I
D
= -1.4A
V
DS
= -15V, V
GS
= 0V
f = 1.0MHz
pF
nS
V
DD
= -15V, I
D
= -1.0A,
R
G
6.0Ω V
GS
= -10V
V
DS
= -15V, V
GS
= -5.0V,
I
D
= -1.4A
V
DS
= -15V, V
GS
= -10V,
I
D
= -1.4A
T
J
= +25°C, I
S
= -1.1A, V
GS
= 0V
T
J
= +25°C, I
F
= -0.95A,
di/dt = 100A/µs
nC
nC
V
nS
nC
8. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤ 2%.
9. Switching characteristics are independent of operating junction temperature.
10. For design aid only, not subject to production testing.
ZXMP3A13F
Document number: DS33573 Rev. 2 - 2
4 of 8
www.diodes.com
October 2015
© Diodes Incorporated
ZXMP3A13F
Typical Characteristics
ZXMP3A13F
Document number: DS33573 Rev. 2 - 2
5 of 8
www.diodes.com
October 2015
© Diodes Incorporated
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