DMN3042L
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
max
26.5m
30V
32m
@ V
GS
= 4.5V
5.0A
@ V
GS
= 10V
I
D
max
5.8A
Features and Benefits
•
•
•
•
•
•
•
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Mechanical Data
•
•
•
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Weight: 0.008 grams (Approximate)
•
•
•
•
Battery Charging
Power Management Functions
DC-DC Converters
Portable Power Adaptors
SOT23
•
•
•
D
D
G
G
S
S
Top View
Internal Schematic
Top View
Ordering Information
(Note 4)
Part Number
DMN3042L-7
DMN3042L-13
Notes:
Case
SOT23
SOT23
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
SOT23
4L
4L = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: B = 2014)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2009
W
Jan
1
Feb
2
YM
2010
X
Mar
3
Apr
4
2011
Y
May
5
Jun
6
2012
Z
Jul
7
2013
A
Aug
8
Sep
9
2014
B
Oct
O
Nov
N
2015
C
Dec
D
January 2015
© Diodes Incorporated
DMN3042L
Document number: DS37539 Rev. 2- 2
1 of 6
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DMN3042L
Maximum Ratings
(@T
A
= +25°C unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) V
GS
= 10V
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Steady
State
C
T
A
= +25°
T
A
= +70°
C
Symbol
V
DSS
V
GSS
I
D
I
S
I
DM
Value
30
±12
5.8
4.0
1.5
30
Units
V
V
A
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Steady State
Steady State
Symbol
P
D
R
θJA
P
D
R
θJA
T
J,
T
STG
Value
0.72
171
1.4
93
-55 to +150
Unit
W
°
C/W
W
°
C/W
°
C
Electrical Characteristics
(@T
A
= +25°C unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= 10V)
Total Gate Charge (V
GS
= 4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
V
SD
C
iss
C
oss
C
rss
R
G
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Min
30
0.6
Typ
21
23
29
0.7
570
63
53
3.2
13.3
6.1
1.0
1.6
1.5
3.3
13.9
4.9
7.8
1.9
Max
1
±100
1.4
26.5
32
48
1.2
860
95
80
4.5
20
8
1.5
2.5
2.4
5
22
7
12
3
Unit
V
µA
nA
V
m
V
Test Condition
V
GS
= 0V, I
D
= 250µA
V
DS
= 30V, V
GS
= 0V
V
GS
=
±12V,
V
DS
= 0V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 5.8A
V
GS
= 4.5V, I
D
= 5.0A
V
GS
= 2.5V, I
D
= 4.0A
V
GS
= 0V, I
S
= 1A
V
DS
= 15V, V
GS
= 0V
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
pF
nC
V
DS
= 15V, I
D
= 6.9A
nS
V
GS
= 10V, V
DD
= 15V, R
G
= 3 ,
I
D
= 6.9A
I
S
= 5A, dI/dt = 100A/µs
I
S
= 5A, dI/dt = 100A/µs
nS
nC
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMN3042L
Document number: DS37539 Rev. 2- 2
2 of 6
www.diodes.com
January 2015
© Diodes Incorporated
DMN3042L
30
V
GS
= 2.5V
20
18
V
DS
= 5.0V
25
I
D
, DRAIN CURRENT (A)
V
GS
= 3.0V
V
GS
= 4.0V
16
I
D
, DRAIN CURRENT (A)
14
12
10
8
6
4
2
V
GS
= 1.5V
T
A
= 85°
C
T
A
= 25°
C
T
A
= -55°
C
T
A
= 150°
C
T
A
= 125°
C
20
V
GS
= 4.5V
V
GS
= 2.0V
15
V
GS
= 10.0V
10
5
0
0
0
1
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
5
0
0.5
1
1.5
2
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
I
D
= 5.8A
2.5
0.026
V
GS
= 4.5V
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE ( )
0.028
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE ( )
0.2
0.16
0.024
0.12
0.022
V
GS
= 10V
0.08
0.02
0.04
I
D
= 5.0A
0.018
0
5
10
15
20
25
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
V
GS
= 10V
T
A
= 150°
C
30
0
0
2
4
6
8
10
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristic
V
GS
= 4.5V
I
D
= 5.0A
12
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE ( )
0.04
1.8
R
DS(ON)
, DRAI N-SO URCE
ON-RESIS TANCE (NORMALI ZE D)
0.035
T
A
= 125°
C
1.6
V
GS
= 10V
I
D
= 5.8A
0.03
T
A
= 85°
C
1.4
V
GS
= 2.5V
I
D
= 4.0A
0.025
1.2
0.02
T
A
= 25°
C
1
0.015
T
A
= -55°
C
0.8
0.6
-50
0.01
0
2
6
8 10 12 14 16 18
I
D
, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
4
20
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 6 On-Resistance Variation with Temperature
DMN3042L
Document number: DS37539 Rev. 2- 2
3 of 6
www.diodes.com
January 2015
© Diodes Incorporated
DMN3042L
0.05
V
GS(th )
, GATE THRESHOLD VOLTAGE (V)
1.2
1.1
1
I
D
= 1mA
R
DS(O N)
, DRA IN-S OURCE ON-RES ISTANCE ( )
0.04
V
GS
= 2.5V
I
D
= 10A
0.9
0.8
I
D
= 250µA
0.03
V
GS
= 10V
I
D
= 5.8A
0.7
0.6
0.5
0.4
0.3
-50
-25
0
25
50
75
100
125
150
0.02
V
GS
= 4.5V
I
D
= 5.0A
0.01
-50
-25
0
25
50
75
100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 7 On-Resistance Variation with Temperature
T
A
= 150°
C
20
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
10000
f = 1MHz
I
S
, SOURCE CURRENT (A)
16
T
A
= 125°
C
C
T
, JUNCTI ON CAPACITA NCE (pF)
1000
C
iss
12
T
A
= 85°
C
8
100
C
rss
C
oss
4
T
A
= -55°
C
T
A
= 25°
C
0
0
0.3
0.6
0.9
1.2
1.5
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
10
0
5
10
15
20
25
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
30
10
V
DS
= 15V
100
R
DS(on)
Limited
V
GS
GATE THRESHOLD VOLTAGE (V)
8
6
I
D
, DRAIN CURRENT (A)
I
D
= 6.9A
10
DC
1
P
W
= 10s
P
W
= 1s
P
W
= 100ms
T
J (max)
= 1 5 0 °C
T
A
= 2 5 °C
V
GS
= 1 0 V
Sin g le Pu lse
P
W
= 1ms
P
W
= 10ms
4
2
0.1
0
0
2
4
6
8
10
12
Q
g
, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
14
P
W
= 100µs
0.01
DUT on 1 * MRP Board
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
100
DMN3042L
Document number: DS37539 Rev. 2- 2
4 of 6
www.diodes.com
January 2015
© Diodes Incorporated
DMN3042L
1
r(t), TRANSIEN THERMAL RESISTANCE
T
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
R
thja
(t) = r(t) * R
thja
D = Single Pulse
R
thja
= 168°
C/W
Duty Cycle, D = t1/ t2
0.001
0.01
0.1
1
10
100
1000
0.001
0.00001
0.0001
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
Z
C
X
E
DMN3042L
Document number: DS37539 Rev. 2- 2
5 of 6
www.diodes.com
1L
52.0
ENALP EGUAG
a
L
°7 llA
M
J
D
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.890 1.00 0.975
K1
0.903 1.10 1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085 0.150 0.110
a
8°
All Dimensions in mm
G
A
H
F
B
K
C
1K
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35
January 2015
© Diodes Incorporated
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