X1G004451001100 datasheet, PDF

Datasheet> All Categories > Analog mixed-signal IC> SMD crystal oscillator (active)> X1G004451001100

X1G004451001100: DescriptionWorking voltage: 1.6V ~ 3.6V Working power supply current (maximum value): 3mA Main frequency: 20MHz Frequency stability: ±100ppm; CategoryAnalog mixed-signal IC SMD crystal oscillator (active); File Size386KB，2 Pages; ManufacturerEPSON; Websitehttp://www.epsondevice.com

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X1G004451001100 Overview

Working voltage: 1.6V ~ 3.6V Working power supply current (maximum value): 3mA Main frequency: 20MHz Frequency stability: ±100ppm

X1G004451001100 Parametric

Parameter Name	Attribute value
Operating Voltage	1.6V ~ 3.6V
Operating power current (maximum)	3mA
Main frequency	20MHz
frequency stability	±100ppm
Operating temperature	-40℃ ~ +105℃

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晶½振荡器

(SPXO)

输出:

CMOS

SG5032CAN

CBN

CCN

SG7050CAN

CBN

CCN

频率范围

电源电压

功½

输出

1 MHz ~ 170 MHz (基频模式振荡器)

1.8 V ~ 5.0 V

待机(

) ···SGxxxxCAN / CBN

½½(OE)

···SGxxxxCCN

CMOS

SG5032CAN/CBN/CCN

(5.0 × 3.2 × 1.1 mm)

实际尺寸

SG5032CAN

/CBN/CCN

SG7050CAN

/CBN/CCN

产品号码(请联系我们)

SG5032CAN: X1G004451xxxx00

SG5032CBN: X1G004461xxxx00

SG5032CCN: X1G004471xxxx00

SG7050CAN: X1G004481xxxx00

SG7050CBN: X1G004491xxxx00

SG7050CCN: X1G004501xxxx00

SG7050CAN/CBN/CCN

(7.0 × 5.0 × 1.3 mm)

规格（特征）

项目

输出频率范围

电源电压

储存温度范围

工½温度范围

频率稳定度

功耗

待机电流

输出禁用电流

占空比

输出电压

输出负½½条件（CMOS）

输入电压

上升/下降时间

振荡启动时间

频率老化

产品名称

(标准显示)

符号

T_stg

T_use

f_tol

I_std

I_dis

SYM

L_CMOS

/ t

t_str

f_aging

规格说明

SG5032CAN

SG5032CBN

SG5032CCN

SG7050CAN

SG7050CBN

SG7050CCN

1 MHz ~ 75 MHz 80 MHz ~ 170 MHz 2.5 MHz ~ 50 MHz

T: 1.6 V ~ 3.6 V

H: 4.5 V ~ 5.5 V

-40

C

~ +125

C

G: -40

C

~ +85

C

H:-40

C

~ +105

C

-6

50 

-6

100 

3.0 mA Max.

11 mA Max.

20 mA Max.

2.7

A

Max.

A

Max.

10 mA Max.

45 % ~ 55 %

40 % ~ 60 %

-0.4V Min.

0.4 V Max.

15 pF Max.

50 pF Max.

80 % V

Min.

20 % V

Max.

4 ns Max.

3 ns Max.

5 ns Max.

3 ms Max.

3 

10 / year Max.

-6

条件

请联系我们以便获取其它可用频率的相关信息。

裸存

-40

C

~ +85

C

-40

C

~ +105

C

无负½½条件

=GND

OE=GND

50 % V

极,

L_CMOS



15 pF

终端,

终端

5 ms Max.

5 

10 / year Max.

-6

20 %

80 %

极,

L_CMOS =15 pF

在

90 % V

时，所需时间为

秒

+85C,(+105C)

+25

C,

第一年

SG5032 C AN 25.000000MHz T J G A

(

⑤⑥:

对应不可

)

①

②

③

④⑤⑥⑦

①型号

②输出(C:CMOS) ③频率 ④电源电压 ⑤频率稳定度

④电源电压

1.6 ~ 3.6 V

4.5 ~ 5.5 V

⑤频率稳定度

-6

±50 × 10

-6

±100 × 10

⑥工½温度范围

⑦内部识别码(A:默认)

⑥工½温度范围

-40 ~ +85°C

-40 ~ +105°C

(单½：mm)

外部尺寸规格

●SG5032

type

5.0±0.2

3.2±0.2

5.0±0.2

推荐焊盘尺寸

●SG5032

type

C ( ex. 0.01 µF)

Resist

(单½：

mm)

1.6

1.5

2.54

1.8

2.0

5.08

4.2

2.2

●SG7050

type

7.0±0.2

E 156.25

CBN395K

1.1±0.2

E 25.000

CAN395K

1.3±0.2

●SG7050

type

C (ex. 0.01 µF)

1.2

C0.4

C0.5

1.0

1.4

引脚图

引脚

5.08

1.1

连接

OE or ST

Resist

2.54

说明：

引脚

= “H”

或 “打开” ：指定的频率输出

= “L”：

输出为高阻抗

= “H”

或 “打开” ：指定的频率输出

= “L”：

输出为高阻抗，振荡停止

GND

OUT

*OE

功½只

SGxxxxCCN

对应

为了维持稳定运行，

在接近晶½产品的电源输入端

处（在V

-GND之间）添加一个0.01~0.1uF的去

耦电容

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