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MB85RC64TAPNF-G-BDERE1

Description
Memory interface type: I2C Memory capacity: 64Kb (8K x 8) Operating voltage: 1.8V ~ 3.6V Memory type: Non-Volatile
Categorystorage    FRAM memory   
File Size936KB,28 Pages
ManufacturerFUJITSU
Websitehttp://edevice.fujitsu.com/fmd/en/index.html
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MB85RC64TAPNF-G-BDERE1 Overview

Memory interface type: I2C Memory capacity: 64Kb (8K x 8) Operating voltage: 1.8V ~ 3.6V Memory type: Non-Volatile

MB85RC64TAPNF-G-BDERE1 Parametric

Parameter NameAttribute value
Memory architecture (format)FRAM
Memory interface typeI2C
memory capacity64Kb (8K x 8)
Operating Voltage1.8V ~ 3.6V
memory typeNon-Volatile
FUJITSU SEMICONDUCTOR
DATA SHEET
DS501-00044-2v0-E
Memory FRAM
64 K (8 K
×
8) Bit I
2
C
MB85RC64TA
DESCRIPTION
The MB85RC64TA is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192
words
×
8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
nonvolatile memory cells.
Unlike SRAM, the MB85RC64TA is able to retain data without using a data backup battery.
The read/write endurance of the nonvolatile memory cells used for the MB85RC64TA has improved to be
at least 10
13
cycles, significantly outperforming Flash memory and E
2
PROM in the number.
The MB85RC64TA does not need a polling sequence after writing to the memory such as the case of Flash
memory or E
2
PROM.
FEATURES
• Bit configuration
• Two-wire serial interface
• Operating frequency
: 8,192 words
×
8 bits
: Fully controllable by two ports: serial clock (SCL) and serial data (SDA).
: 3.4 MHz (Max @HIGH SPEED MODE)
1 MHz (Max @FAST MODE PLUS)
Read/write endurance
: 10
13
times / byte
Data retention
: 10 years (
+
85
°C),
95 years (
+
55
°C),
over 200 years (
+
35
°C)
Operating power supply voltage : 1.8 V to 3.6 V
Low power consumption
: Operating power supply current 170
μA
(Typ @3.4 MHz)
Standby current 8
μA
(Typ)
Sleep current 4
μA
(Typ)
Operation ambient temperature range :
40
°C
to + 85
°C
Package
: 8-pin plastic SOP (FPT-8P-M09)
8-pin plastic SON (LCC-8P-M04)
RoHS compliant
Copyright 2016 FUJITSU SEMICONDUCTOR LIMITED
2016.10

MB85RC64TAPNF-G-BDERE1 Related Products

MB85RC64TAPNF-G-BDERE1 MB85RC64TAPN-G-AMEWE1
Description Memory interface type: I2C Memory capacity: 64Kb (8K x 8) Operating voltage: 1.8V ~ 3.6V Memory type: Non-Volatile Memory interface type: I2C Memory capacity: 64Kb (8K x 8) Operating voltage: 1.8V ~ 3.6V Memory type: Non-Volatile
Memory architecture (format) FRAM FRAM
Memory interface type I2C I2C
memory capacity 64Kb (8K x 8) 64Kb (8K x 8)
Operating Voltage 1.8V ~ 3.6V 1.8V ~ 3.6V
memory type Non-Volatile Non-Volatile

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