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MB85RC512TPNF-G-JNERE1

Description
Memory interface type: I2C Memory capacity: 512Kb (64K x 8) Operating voltage: 1.8V ~ 3.6V Memory type: Non-Volatile
Categorystorage    FRAM memory   
File Size2MB,36 Pages
ManufacturerFUJITSU
Websitehttp://edevice.fujitsu.com/fmd/en/index.html
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MB85RC512TPNF-G-JNERE1 Overview

Memory interface type: I2C Memory capacity: 512Kb (64K x 8) Operating voltage: 1.8V ~ 3.6V Memory type: Non-Volatile

MB85RC512TPNF-G-JNERE1 Parametric

Parameter NameAttribute value
Memory architecture (format)FRAM
Memory interface typeI2C
memory capacity512Kb (64K x 8)
Operating Voltage1.8V ~ 3.6V
memory typeNon-Volatile
FUJITSU SEMICONDUCTOR
DATA SHEET
DS501-00028-0v01-E
Memory FRAM
512K (64 K
×
8) Bit I
2
C
MB85RC512T
DESCRIPTION
The MB85RC512T is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536
words
×
8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
nonvolatile memory cells.
Unlike SRAM, the MB85RC512T is able to retain data without using a data backup battery.
The read/write endurance of the nonvolatile memory cells used for the MB85RC512T has improved to be
at least 10
13
cycles, significantly outperforming other nonvolatile memory products in the number.
The MB85RC512T does not need a polling sequence after writing to the memory such as the case of Flash
memory or E
2
PROM.
FEATURES
• Bit configuration
• Two-wire serial interface
• Operating frequency
: 65,536 words
×
8 bits
: Fully controllable by two ports: serial clock (SCL) and serial data (SDA).
: 3.4 MHz (Max @HIGH SPEED MODE)
1 MHz (Max @FAST MODE PLUS)
Read/write endurance
: 10
13
times / byte
Data retention
: 10 years (
+
85
°C)
Operating power supply voltage : 1.8 V to 3.6 V
Low-power consumption
: Operating power supply current 1.2 mA (Max @3.4 MHz)
Standby current 15
μA
(Typ)
Sleep current 4
μA
(Typ)
Operation ambient temperature range
:
40
°C
to
+
85
°C
Package
: 8-pin plastic SOP (FPT-8P-M02)
RoHS compliant
Copyright©2014 FUJITSU SEMICONDUCTOR LIMITED All rights reserved
2014.1

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