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MB85RS256TYPNF-GS-BCERE1

Description
Memory interface type: SPI Memory capacity: 256Kb (32K x 8) Operating voltage: 1.8V ~ 3.6V Memory type: Non-Volatile 256-Kbit (32K × 8bit), I2C interface, operating voltage: 2.7V to 5.5V
Categorystorage    storage   
File Size862KB,26 Pages
ManufacturerFUJITSU
Websitehttp://edevice.fujitsu.com/fmd/en/index.html
Environmental Compliance
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MB85RS256TYPNF-GS-BCERE1 Overview

Memory interface type: SPI Memory capacity: 256Kb (32K x 8) Operating voltage: 1.8V ~ 3.6V Memory type: Non-Volatile 256-Kbit (32K × 8bit), I2C interface, operating voltage: 2.7V to 5.5V

MB85RS256TYPNF-GS-BCERE1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerFUJITSU
package instructionSOP-8
Reach Compliance Codecompliant
JESD-30 codeR-PDSO-G8
length4.89 mm
memory density262144 bit
Memory IC TypeMEMORY CIRCUIT
memory width8
Number of functions1
Number of terminals8
word count32768 words
character code32000
Operating modeSYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
organize32KX8
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Filter levelAEC-Q100
Maximum seat height1.73 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)1.8 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelAUTOMOTIVE
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width3.9 mm
FUJITSU SEMICONDUCTOR
DATA SHEET
DS501-00046-2v0-E
Memory FRAM
256K (32 K
8) Bit SPI
MB85RS256TY
(AEC-Q100 Compliant)
DESCRIPTION
MB85RS256TY is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768
words
8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming
the nonvolatile memory cells. This product is specifically targeted for high-temperature environment such
as automotive applications.
MB85RS256TY adopts the Serial Peripheral Interface (SPI).
The MB85RS256TY is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85RS256TY can be used for 10
13
read/write operations, which is a significant
improvement over the number of read and write operations supported by Flash memory and E
2
PROM.
As MB85RS256TY does not need any waiting time in writing process, the write cycle time of MB85RS256TY
is much shorter than that of Flash memories or E
2
PROM.
FEATURES
• Bit configuration
• Serial Peripheral Interface
• Operating frequency
• High endurance
• Data retention
: 32,768 words
8 bits
: SPI (Serial Peripheral Interface)
Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1)
: 33 MHz (Max)
: 10
13
times / byte
: 10 years (+85
C)
1 year (+125
C)
or more
Under evaluation for more than 1year(+125
C)
Operating power supply voltage : 1.8 V to 3.6 V
Low power consumption
: Operating power supply current 2.3 mA (Max@33 MHz)
Standby current 50
A
(Max)
Sleep current 12
A
(Max)
Operation ambient temperature range :
40
C
to +125
C
Package
: 8-pin plastic SOP (FPT-8P-M10)
AEC-Q100 Grade 1 compliant
RoHS compliant
Copyright 2017 FUJITSU SEMICONDUCTOR LIMITED
2017.7
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