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IRF7807ZTRPBF

Description
Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 11A Gate-source threshold voltage: 2.25V @ 250uA Drain-source on-resistance: 13.8mΩ @ 11A, 10V Maximum power dissipation ( Ta=25°C): 2.5W Type: N channel N channel, Vds=30V
CategoryDiscrete semiconductor    The transistor   
File Size214KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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IRF7807ZTRPBF Overview

Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 11A Gate-source threshold voltage: 2.25V @ 250uA Drain-source on-resistance: 13.8mΩ @ 11A, 10V Maximum power dissipation ( Ta=25°C): 2.5W Type: N channel N channel, Vds=30V

IRF7807ZTRPBF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionSMALL OUTLINE, R-PDSO-G8
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time15 weeks
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)11 A
Maximum drain-source on-resistance0.0138 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeMS-012AA
JESD-30 codeR-PDSO-G8
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals8
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
PD - 95211B
IRF7807ZPbF
HEXFET
®
Power MOSFET
Applications
l
Control FET for Notebook Processor Power
l
Synchronous Rectifier MOSFET for
Graphics Cards and POL Converters in
Networking and Telecommunication
Systems
Benefits
l
Very Low R
DS(on)
at 4.5V V
GS
l
Ultra-Low Gate Impedance
l
Fully Characterized Avalanche Voltage
and Current
l
100% Tested for R
G
l
Lead-Free
V
DSS
30V
R
DS(on)
max
13.8m @V
GS
= 10V
:
Qg(typ.)
7.2nC
S
S
S
G
1
8
7
A
A
D
D
D
D
2
3
6
4
5
Top View
SO-8
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
30
± 20
11
8.7
88
2.5
1.6
0.02
-55 to + 150
Units
V
f
Power Dissipation
f
Power Dissipation
c
A
W
Linear Derating Factor
Operating Junction and
Storage Temperature Range
W/°C
°C
Thermal Resistance
Parameter
R
θJL
R
θJA
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
–––
Max.
20
50
Units
°C/W
f
Notes

through
„
are on page 10
www.irf.com
1
6/29/06

IRF7807ZTRPBF Related Products

IRF7807ZTRPBF
Description Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 11A Gate-source threshold voltage: 2.25V @ 250uA Drain-source on-resistance: 13.8mΩ @ 11A, 10V Maximum power dissipation ( Ta=25°C): 2.5W Type: N channel N channel, Vds=30V
Is it Rohs certified? conform to
Maker Infineon
package instruction SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code compliant
ECCN code EAR99
Factory Lead Time 15 weeks
Configuration SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V
Maximum drain current (ID) 11 A
Maximum drain-source on-resistance 0.0138 Ω
FET technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code MS-012AA
JESD-30 code R-PDSO-G8
JESD-609 code e3
Humidity sensitivity level 1
Number of components 1
Number of terminals 8
Operating mode ENHANCEMENT MODE
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260
Polarity/channel type N-CHANNEL
surface mount YES
Terminal surface Matte Tin (Sn)
Terminal form GULL WING
Terminal location DUAL
Maximum time at peak reflow temperature 30
transistor applications SWITCHING
Transistor component materials SILICON
Base Number Matches 1
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