BSC070N10NS3 G
OptiMOS
3 Power-Transistor
TM
Product Summary
V
DS
R
DS(on),max
I
D
100
7
90
PG-TDSON-8
V
mW
A
Features
• Very low gate charge for high frequency applications
• Optimized for dc-dc conversion
• N-channel, normal level
• Excellent gate charge x
R
DS(on)
product (FOM)
• Very low on-resistance
R
DS(on)
• 150 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
1)
for target application
• Halogen-free according to IEC61249-2-21
Type
BSC070N10NS3 G
Package
PG-TDSON-8
Marking
070N10NS
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
C
=25 °C
T
C
=100 °C
Pulsed drain current
2)
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
1)
2)
Value
90
58
360
160
±20
Unit
A
I
D,pulse
E
AS
V
GS
P
tot
T
j
,
T
stg
T
C
=25 °C
I
D
=50 A,
R
GS
=25
W
mJ
V
W
°C
T
C
=25 °C
114
-55 ... 150
55/150/56
J-STD20 and JESD22
See figure 3
Rev. 2.1
page 1
2011-03-11
BSC070N10NS3 G
Parameter
Symbol Conditions
min.
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance,
junction - ambient
R
thJC
R
thJA
minimal footprint
6 cm
2
cooling area
3)
-
-
-
-
-
-
1.1
62
50
K/W
Values
typ.
max.
Unit
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=75 µA
V
DS
=100 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=100 V,
V
GS
=0 V,
T
j
=125 °C
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=20 V,
V
DS
=0 V
V
GS
=10 V,
I
D
=50 A
V
GS
=6 V,
I
D
=25 A
Gate resistance
Transconductance
R
G
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=50 A
100
2
-
-
2.7
0.01
-
3.5
1
µA
V
-
-
-
-
-
36
10
1
6.3
8
1.5
72
100
100
7
14
-
-
W
S
nA
mW
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.1
page 2
2011-03-11
BSC070N10NS3 G
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
4)
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
4)
Values
typ.
max.
Unit
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=50 V,
V
GS
=10 V,
I
D
=25 A,
R
G
=1.6
W
V
GS
=0 V,
V
DS
=50 V,
f
=1 MHz
-
-
-
-
-
-
-
3000
520
21
15
10
29
8
4000
690
-
-
-
-
-
pF
ns
Q
gs
Q
gd
Q
sw
Q
g
V
plateau
Q
oss
V
DD
=50 V,
V
GS
=0 V
V
DD
=50 V,
I
D
=25 A,
V
GS
=0 to 10 V
-
-
-
-
-
-
13
7
12
42
4.3
55
-
-
-
55
-
73
nC
V
nC
I
S
I
S,pulse
V
SD
t
rr
Q
rr
-
T
C
=25 °C
-
V
GS
=0 V,
I
F
=50 A,
T
j
=25 °C
V
R
=50 V,
I
F
=25 A,
di
F
/dt =100 A/µs
-
-
-
-
-
1
61
112
90
360
1.2
-
-
A
V
ns
nC
See figure 16 for gate charge parameter definition
Rev. 2.1
page 3
2011-03-11
BSC070N10NS3 G
1 Power dissipation
P
tot
=f(T
C
)
2 Drain current
I
D
=f(T
C
);
V
GS
≥10 V
120
100
90
100
80
70
80
60
P
tot
[W]
60
I
D
[A]
0
40
80
120
160
50
40
40
30
20
20
10
0
0
0
40
80
120
160
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
10
3
100 ns
1 µs
10 µs
4 Max. transient thermal impedance
Z
thJC
=f(t
p
)
parameter:
D
=t
p
/T
10
1
10
2
100 µs
10
0
0.5
1 ms
Z
thJC
[K/W]
I
D
[A]
10
1
DC
0.2
0.1
10
-1
10
0
0.05
0.02
0.01
single pulse
10
-1
10
-1
10
0
10
1
10
2
10
3
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 2.1
page 4
2011-03-11
BSC070N10NS3 G
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
120
10 V
7V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
12
5V
100
6V
10
5.5 V
5.5 V
6V
7V
5V
80
8
R
DS(on)
[mW]
I
D
[A]
10 V
60
6
40
4.5 V
4
20
2
0
0
1
2
3
0
0
20
40
60
80
100
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
parameter:
T
j
100
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
140
120
80
100
60
80
g
fs
[S]
40
150 °C
I
D
[A]
60
40
20
25 °C
20
0
0
2
4
6
0
0
20
40
60
80
100
120
140
V
GS
[V]
I
D
[A]
Rev. 2.1
page 5
2011-03-11
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